Loading...

WIDE BAND MEDIUM POWER RF & Microwave Amplifiers 174

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
MMZ25332B4T1 by NXP Semiconductors

MMZ25332B4T1

NXP Semiconductors

NXP Semiconductors' MMZ25332B4T1 is a wide band medium power RF amplifier with 23.5 dB gain, operating from 1500 MHz to 2700 MHz. It has a max input power of 30 dBm and requires a 5V power supply, making it suitable for various RF and microwave applications. The component features a hybrid technology construction in a surface mount package with 24 terminals.

50 ohm

COMPONENT

23.5 dB

30 dBm

e3

SURFACE MOUNT

1

24

2700 MHz

1500 MHz

PLASTIC/EPOXY

LCC24,.16SQ,20

5

WIDE BAND MEDIUM POWER

415 mA

HYBRID

TIN

ADMV7710CHIPS by Analog Devices

ADMV7710CHIPS

Analog Devices

Analog Devices' ADMV7710CHIPS is a wide band medium power RF amplifier with 21 dB gain, operating from 71-76 GHz. Ideal for applications requiring high-frequency amplification in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

21 dB

76000 MHz

71000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

ADMV7810CHIPS by Analog Devices

ADMV7810CHIPS

Analog Devices

Analog Devices' ADMV7810CHIPS is a wide band medium power RF amplifier with 18 dB gain. Operating from -55 °C to 85°C, it covers frequencies from 81-86 GHz. Ideal for RF & microwave applications requiring high performance in a compact component form factor.

50 ohm

COMPONENT

18 dB

86000 MHz

81000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC943APM5ETR by Analog Devices

HMC943APM5ETR

Analog Devices

HMC943APM5ETR by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-34 GHz. It can handle up to 20 dBm CW input power and has a max VSWR of 7. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

20.5 dB

20 dBm

34000 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

HMC943APM5E by Analog Devices

HMC943APM5E

Analog Devices

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

50 ohm

COMPONENT

20.5 dB

20 dBm

34000 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

HMC1132PM5ETR by Analog Devices

HMC1132PM5ETR

Analog Devices

Analog Devices' HMC1132PM5ETR is a wide band medium power RF amplifier with 21 dB gain, 50 ohm impedance, and 18 dBm CW input power. It operates b/w 27-32 GHz, making it ideal for high-frequency applications in RF and microwave systems. With a VSWR of 7 and operating temperatures from -55 to 85°C, it ensures reliable performance in various environments.

50 ohm

COMPONENT

21 dB

18 dBm

32000 MHz

27000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC1132PM5E by Analog Devices

HMC1132PM5E

Analog Devices

Analog Devices' HMC1132PM5E is a wide band medium power RF amplifier with 21 dB gain and 50 ohm impedance. It operates b/w 27-32 GHz, handles up to 18 dBm CW input power, and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 to +85°C.

50 ohm

COMPONENT

21 dB

18 dBm

32000 MHz

27000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

ADPA7001CHIPS by Analog Devices

ADPA7001CHIPS

Analog Devices

ADPA7001CHIPS by Analog Devices is a PHEMT technology RF amplifier with 12 dB gain, operating b/w 50-95 GHz. It has a max input power of 17 dBm and requires a 3.5V power supply. Ideal for wide band medium power applications in RF & Microwave systems, it offers reliable performance from -55 to 85°C.

50 ohm

COMPONENT

12 dB

17 dBm

1

95000 MHz

50000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3.5

WIDE BAND MEDIUM POWER

350 mA

PHEMT

ADPA7002CHIP by Analog Devices

ADPA7002CHIP

Analog Devices

ADPA7002CHIP by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. Operating from 20-44 GHz, it is ideal for applications requiring high-frequency amplification in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

12 dB

25 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

ADPA7005CHIP by Analog Devices

ADPA7005CHIP

Analog Devices

ADPA7005CHIP by Analog Devices is a wide band medium power RF amplifier with 11.5 dB gain, operating from 20-44 GHz. It can handle up to 27 dBm CW input power and operates in temperatures ranging from -55 °C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

11.5 dB

27 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC863ALC4TR-R5 by Analog Devices

HMC863ALC4TR-R5

Analog Devices

Analog Devices' HMC863ALC4TR-R5 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

20.5 dB

26 dBm

e4

29500 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

Gold (Au) - with Nickel (Ni) barrier

7

HMC863ALC4TR by Analog Devices

HMC863ALC4TR

Analog Devices

Analog Devices' HMC863ALC4TR is a wide band medium power RF amplifier with 20.5 dB gain, operating b/w 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for high-frequency applications in RF and microwave systems.

50 ohm

COMPONENT

20.5 dB

26 dBm

e4

29500 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

Gold (Au) - with Nickel (Ni) barrier

7

ADPA7006CHIP by Analog Devices

ADPA7006CHIP

Analog Devices

ADPA7006CHIP by Analog Devices is a wide band medium power RF amplifier with 21 dB gain, operating from 18-44 GHz. It can handle up to 20 dBm CW input power and operates b/w -55°C to +85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

21 dB

20 dBm

44000 MHz

18000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

ADPA9002ACGZN-R7 by Analog Devices

ADPA9002ACGZN-R7

Analog Devices

ADPA9002ACGZN-R7 by Analog Devices is a wide band medium power RF amplifier with 13.5 dB gain, 25 dBm CW input power, and 50 ohm impedance. It operates from 0 to 10000 MHz, suitable for various RF & microwave applications requiring high performance amplification in temperatures ranging from -40 to 85 °C.

50 ohm

COMPONENT

13.5 dB

25 dBm

10000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

ADPA9002ACGZN by Analog Devices

ADPA9002ACGZN

Analog Devices

ADPA9002ACGZN by Analog Devices is a wide band medium power RF amplifier with 13.5 dB gain, 25 dBm CW input power, and VSWR of 7. It operates from -40 to 85°C and covers frequencies from 0 to 10 GHz. Ideal for RF & microwave applications requiring high performance amplification in a compact form factor.

50 ohm

COMPONENT

13.5 dB

25 dBm

10000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

ADPA7005AEHZ by Analog Devices

ADPA7005AEHZ

Analog Devices

ADPA7005AEHZ by Analog Devices is a wide band medium power RF amplifier with 12 dB gain. It operates b/w 18-44 GHz, handling up to 27 dBm CW input power. Ideal for applications requiring high frequency amplification in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

12 dB

27 dBm

44000 MHz

18000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

ADPA7002AEHZ by Analog Devices

ADPA7002AEHZ

Analog Devices

ADPA7002AEHZ by Analog Devices is a wide band medium power RF amplifier with 12 dB gain. It operates b/w 20-44 GHz, handling up to 25 dBm CW input power. Ideal for applications requiring high-frequency amplification in temperatures ranging from -55°C to 85°C.

50 ohm

COMPONENT

12 dB

25 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC1022A by Analog Devices

HMC1022A

Analog Devices

Analog Devices' HMC1022A is a GAAS RF amplifier with 1.08 VSWR, 9.5 dB gain, and 50 ohm impedance. Ideal for wideband medium power applications from 0 to 48000 MHz, it features surface mounting and requires a 10V power supply.

50 ohm

COMPONENT

9.5 dB

SURFACE MOUNT

1

8

48000 MHz

0 MHz

DIE OR CHIP

10

WIDE BAND MEDIUM POWER

GAAS

1.08

ADPA7007CHIP by Analog Devices

ADPA7007CHIP

Analog Devices

ADPA7007CHIP by Analog Devices is a PHEMT technology RF amplifier with 18 dB gain, operating from 18-44 GHz. It has a max input power of 18 dBm and requires a 5V power supply, drawing up to 1400 mA. Ideal for wide band medium power applications in RF & microwave systems.

50 ohm

COMPONENT

18 dB

18 dBm

SURFACE MOUNT

1

10

44000 MHz

18000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

1400 mA

PHEMT

ADPA7006AEHZ-R7 by Analog Devices

ADPA7006AEHZ-R7

Analog Devices

ADPA7006AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 20 dB gain, operating from 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring high-frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

20 dB

20 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

ADPA7006AEHZ by Analog Devices

ADPA7006AEHZ

Analog Devices

ADPA7006AEHZ by Analog Devices is a RF & Microwave Amplifier with 20 dB gain, operating frequency range of 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for wide band medium power applications requiring high performance in surface mount configurations.

50 ohm

COMPONENT

20 dB

20 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

ADPA7007AEHZ-R7 by Analog Devices

ADPA7007AEHZ-R7

Analog Devices

ADPA7007AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 20-44 GHz. It features a max input power of 27 dBm and VSWR of 1.29, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

50 ohm

COMPONENT

18.5 dB

27 dBm

SURFACE MOUNT

1

18

44000 MHz

20000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

1.29

ADPA7007AEHZ by Analog Devices

ADPA7007AEHZ

Analog Devices

ADPA7007AEHZ by Analog Devices is a RF amplifier with 27 dBm CW input power, 1.29 VSWR, and 18.5 dB gain. Ideal for wideband medium power applications in the frequency range of 20-44 GHz. Features GaAs technology, ceramic-metal package, and surface mounting option.

50 ohm

COMPONENT

18.5 dB

27 dBm

SURFACE MOUNT

1

18

44000 MHz

20000 MHz

85 Cel

-40 Cel

CERAMIC, METAL-SEALED COFIRED

5

WIDE BAND MEDIUM POWER

GAAS

1.29

ADL8104ACPZN by Analog Devices

ADL8104ACPZN

Analog Devices

ADL8104ACPZN by Analog Devices is a PHEMT RF amplifier with 10dB gain, 400-7500MHz frequency range, and 25dBm CW input power. Widely used in RF & microwave applications due to its wide band medium power capabilities and surface mounting feature.

50 ohm

COMPONENT

10 dB

25 dBm

SURFACE MOUNT

1

16

7500 MHz

400 MHz

85 Cel

-40 Cel

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

PHEMT

1.58

ADL8104ACPZN-R7 by Analog Devices

ADL8104ACPZN-R7

Analog Devices

ADL8104ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 10 dB gain, operating from 400 MHz to 7500 MHz. It has a max input power of 25 dBm and VSWR of 1.58, suitable for wideband medium-power applications. With a compact surface-mount construction and operating temperatures from -40 °C to 85°C, it's ideal for RF and microwave systems.

50 ohm

COMPONENT

10 dB

25 dBm

SURFACE MOUNT

1

16

7500 MHz

400 MHz

85 Cel

-40 Cel

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

PHEMT

1.58

MAAM-011290-DIE by M/a-com Technology Solutions

MAAM-011290-DIE

M/a-com Technology Solutions

MAAM-011290-DIE by M/a-com Technology Solutions is a wide band medium power RF amplifier with 16.5 dB gain, operating from 5-20 GHz. It has a max input power of 10 dBm and VSWR of 1.58, suitable for surface mount applications in RF & microwave systems.

50 ohm

COMPONENT

16.5 dB

10 dBm

SURFACE MOUNT

1

8

20000 MHz

5000 MHz

85 Cel

-40 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

140 mA

1.58

A3M40PD012T7 by NXP Semiconductors

A3M40PD012T7

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 2300 MHz; Power Supplies (V): 3.3;

50 ohm

COMPONENT

30 dB

25 dBm

SURFACE MOUNT

1

12

4200 MHz

2300 MHz

125 Cel

PLASTIC/EPOXY

LCC12,.08SQ,20

3.3

WIDE BAND MEDIUM POWER

300 mA

1.38

HMC8413LP2FETR by Analog Devices

HMC8413LP2FETR

Analog Devices

HMC8413LP2FETR by Analog Devices is a wide band medium power RF amplifier with 17 dB gain, suitable for frequencies ranging from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, making it ideal for RF and microwave applications requiring high performance amplification in the temperature range of -40°C to 85°C.

50 ohm

COMPONENT

17 dB

25 dBm

SURFACE MOUNT

1

6

9000 MHz

10 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND MEDIUM POWER

PHEMT

1.29

HMC451-SX by Analog Devices

HMC451-SX

Analog Devices

HMC451-SX by Analog Devices is a GAAS RF amplifier with 15dB gain, operating from 5-20 GHz. It has a max input power of 10 dBm and VSWR of 1.38, ideal for wideband medium power applications. With a compact surface mount construction, it operates b/w -55 to 85 °C making it suitable for various RF & microwave systems.

50 ohm

COMPONENT

15 dB

10 dBm

SURFACE MOUNT

1

4

20000 MHz

5000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

150 mA

GAAS

1.38

BTS6302UJ by NXP Semiconductors

BTS6302UJ

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Maximum Operating Frequency: 5000 MHz;

50 ohm

COMPONENT

33.8 dB

10 dBm

SURFACE MOUNT

1

16

5000 MHz

2300 MHz

115 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

WIDE BAND MEDIUM POWER

IEC-60134

120 mA

1.67