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WIDE BAND MEDIUM POWER RF & Microwave Amplifiers 174

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
MGA-30689-TR1G by Broadcom

MGA-30689-TR1G

Broadcom

Broadcom's MGA-30689-TR1G is a GAAS RF amplifier with 13.7 dB gain, operating from 40 MHz to 3000 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it suitable for wideband medium-power applications in RF and microwave systems.

LOW NOISE

50 ohm

COMPONENT

13.7 dB

20 dBm

e3

SURFACE MOUNT

1

3

3000 MHz

40 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

125 mA

GAAS

Matte Tin (Sn)

MGA-30789-BLKG by Broadcom

MGA-30789-BLKG

Broadcom

Broadcom's MGA-30789-BLKG is a wide band medium power RF amplifier with 8 dB gain. It operates from 2-6 GHz, handling up to 24 dBm CW input power. This surface mount component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.

COMPONENT

8 dB

24 dBm

e3

SURFACE MOUNT

1

3

6000 MHz

2000 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

117 mA

Tin (Sn)

MGA-30789-TR1G by Broadcom

MGA-30789-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; Gain: 8 dB;

COMPONENT

8 dB

24 dBm

e3

SURFACE MOUNT

1

3

6000 MHz

2000 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

117 mA

Matte Tin (Sn)

MGA-30989-BLKG by Broadcom

MGA-30989-BLKG

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

50 ohm

COMPONENT

8.5 dB

24 dBm

e3

SURFACE MOUNT

1

3

6000 MHz

2000 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

66 mA

GAAS

Tin (Sn)

MGA-30989-TR1G by Broadcom

MGA-30989-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);

50 ohm

COMPONENT

8.5 dB

24 dBm

e3

SURFACE MOUNT

1

3

6000 MHz

2000 MHz

PLASTIC/EPOXY

TO-243

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

66 mA

GAAS

Matte Tin (Sn)

MGA-633P8-BLKG by Broadcom

MGA-633P8-BLKG

Broadcom

Broadcom's MGA-633P8-BLKG is a GAAS RF amplifier with 16.5 dB gain, operating from 450 MHz to 2000 MHz. It has a max input power of 20 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband medium-power applications, this component features a surface-mount package with 8 terminals and requires a 5V power supply.

50 ohm

COMPONENT

16.5 dB

20 dBm

e3

SURFACE MOUNT

1

8

2000 MHz

450 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

67 mA

GAAS

Tin (Sn)

MGA-633P8-TR1G by Broadcom

MGA-633P8-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 450 MHz;

50 ohm

COMPONENT

16.5 dB

20 dBm

e3

SURFACE MOUNT

1

8

2000 MHz

450 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

67 mA

GAAS

Matte Tin (Sn)

MGA-412P8-BLKG by Broadcom

MGA-412P8-BLKG

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 55 mA;

COMPONENT

23 dB

10 dBm

e3

SURFACE MOUNT

1

8

3000 MHz

1700 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

3.3

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

55 mA

GAAS

Matte Tin (Sn)

MGA-412P8-TR1G by Broadcom

MGA-412P8-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1700 MHz;

COMPONENT

23 dB

10 dBm

e3

SURFACE MOUNT

1

8

3000 MHz

1700 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

3.3

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

55 mA

GAAS

Matte Tin (Sn)

MGA-412P8-TR2G by Broadcom

MGA-412P8-TR2G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 23 dB;

COMPONENT

23 dB

10 dBm

e3

SURFACE MOUNT

1

8

3000 MHz

1700 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

3.3

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

55 mA

GAAS

Matte Tin (Sn)

MGA-635T6-BLKG by Broadcom

MGA-635T6-BLKG

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12.5 dB;

CMOS COMPATIBLE

COMPONENT

12.5 dB

10 dBm

e4

SURFACE MOUNT

1

6

2400 MHz

900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

1/2.85

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

10 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-635T6-TR1G by Broadcom

MGA-635T6-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;

CMOS COMPATIBLE

COMPONENT

12.5 dB

10 dBm

e4

SURFACE MOUNT

1

6

2400 MHz

900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

1/2.85

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

10 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-635T6-TR2G by Broadcom

MGA-635T6-TR2G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

CMOS COMPATIBLE

COMPONENT

12.5 dB

10 dBm

e4

SURFACE MOUNT

1

6

2400 MHz

900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

1/2.85

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

10 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

ADMV7710-SX by Analog Devices

ADMV7710-SX

Analog Devices

Analog Devices' ADMV7710-SX is a wide band medium power RF amplifier with 21 dB gain, operating from 71-76 GHz. Ideal for applications requiring high-frequency amplification in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

21 dB

76000 MHz

71000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

ADPA7001CHIPS-SX by Analog Devices

ADPA7001CHIPS-SX

Analog Devices

ADPA7001CHIPS-SX by Analog Devices is a RF amplifier with 12 dB gain, operating frequency range of 50-95 GHz, and max input power of 17 dBm. It is ideal for wide band medium power applications requiring a characteristic impedance of 50 ohm. With PHEMT technology and low supply current of 350 mA at 3.5 V, it can operate in temperatures ranging from -55 to 85°C.

50 ohm

COMPONENT

12 dB

17 dBm

1

95000 MHz

50000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3.5

WIDE BAND MEDIUM POWER

350 mA

PHEMT

ADPA7002C-KIT by Analog Devices

ADPA7002C-KIT

Analog Devices

ADPA7002C-KIT by Analog Devices is a GAAS technology RF amplifier with 12 dB gain, operating from 20-44 GHz. It has a max input power of 25 dBm and operates b/w -55 to 85°C. Ideal for wideband medium-power applications requiring surface mount construction.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

22

44000 MHz

20000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

GAAS

ADPA7005AEHZ-R7 by Analog Devices

ADPA7005AEHZ-R7

Analog Devices

ADPA7005AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 12 dB gain, operating from 18-44 GHz. It can handle up to 27 dBm CW input power and operates in temperatures ranging from -40 °C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

12 dB

27 dBm

44000 MHz

18000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

ADPA7002AEHZ-R7 by Analog Devices

ADPA7002AEHZ-R7

Analog Devices

ADPA7002AEHZ-R7 by Analog Devices is a ceramic-packaged RF amplifier with 25 dBm CW input power, 13.5 dB gain, and wideband medium power technology. It operates b/w -40 °C to 85°C, suitable for applications requiring surface mounting in the frequency range of 18-44 GHz.

50 ohm

COMPONENT

13.5 dB

25 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC

5

WIDE BAND MEDIUM POWER

GAAS

ADPA7004CHIP-SX by Analog Devices

ADPA7004CHIP-SX

Analog Devices

ADPA7004CHIP-SX by Analog Devices is a PHEMT technology RF amplifier with 13dB gain, operating from 40-80GHz. It has a max input power of 18dBm and VSWR of 1.15, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

13 dB

18 dBm

SURFACE MOUNT

1

16

80000 MHz

40000 MHz

85 Cel

-55 Cel

DIE OR CHIP

-0.4,3.5

WIDE BAND MEDIUM POWER

PHEMT

1.15

ADPA7009CHIP by Analog Devices

ADPA7009CHIP

Analog Devices

ADPA7009CHIP by Analog Devices is a PHEMT technology RF amplifier with 20 dBm CW input power, 1.17 VSWR, and 17.5 dB gain. It operates b/w -55 °C to 85°C, covering frequencies from 20 GHz to 54 GHz. Ideal for wideband medium-power applications requiring surface mounting feature.

50 ohm

COMPONENT

17.5 dB

20 dBm

SURFACE MOUNT

1

10

54000 MHz

20000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

PHEMT

1.17

ADPA1106ACGZN by Analog Devices

ADPA1106ACGZN

Analog Devices

ADPA1106ACGZN by Analog Devices is a GAN technology RF amplifier with 33.5 dB gain, operating from 2700 MHz to 3500 MHz. It has a max input power of 30 dBm and VSWR of 2.1, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

33.5 dB

30 dBm

SURFACE MOUNT

1

32

3500 MHz

2700 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

WIDE BAND MEDIUM POWER

GAN

2.1

ADPA1106ACGZN-R7 by Analog Devices

ADPA1106ACGZN-R7

Analog Devices

ADPA1106ACGZN-R7 by Analog Devices is a GAN technology RF amplifier with 33.5 dB gain, operating b/w 2700-3500 MHz. It has a max input power of 30 dBm and VSWR of 2.1, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

33.5 dB

30 dBm

SURFACE MOUNT

1

32

3500 MHz

2700 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

WIDE BAND MEDIUM POWER

GAN

2.1

MAX2644EXT by Maxim Integrated

MAX2644EXT

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 2400 MHz;

50 ohm

COMPONENT

15 dB

5 dBm

e4

SURFACE MOUNT

1

6

2500 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND MEDIUM POWER

11 mA

BIPOLAR

NICKEL PALLADIUM GOLD

HMC930A by Analog Devices

HMC930A

Analog Devices

Analog Devices' HMC930A is a wide band medium power RF amplifier with 10 dB gain and 22 dBm max input power. With a VSWR of 7, it operates from -55°C to 85°C, making it suitable for various RF and microwave applications up to 40 GHz.

50 ohm

COMPONENT

10 dB

22 dBm

40000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC637A by Analog Devices

HMC637A

Analog Devices

Analog Devices' HMC637A is a wide band medium power RF amplifier with 11 dB gain and 25 dBm max input power. Operating from -55 °C to 85°C, it covers frequencies from 0 MHz to 6 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

11 dB

25 dBm

6000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC952ALP5GE by Analog Devices

HMC952ALP5GE

Analog Devices

Analog Devices' HMC952ALP5GE is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It has a max input power of 24 dBm and operates on a 6V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

28 dB

24 dBm

e3

SURFACE MOUNT

1

24

14000 MHz

8000 MHz

85 Cel

-55 Cel

PLASTIC/EPOXY

LCC24,.2SQ,25

6

WIDE BAND MEDIUM POWER

GAAS

Matte Tin (Sn) - annealed

HMC7543-SX by Analog Devices

HMC7543-SX

Analog Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; Technology: PHEMT; Power Supplies (V): 4; Construction: COMPONENT; Maximum Operating Frequency: 76000 MHz;

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

76000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

PHEMT

HMC7543 by Analog Devices

HMC7543

Analog Devices

Analog Devices' HMC7543 is a PHEMT RF amplifier with 19 dB gain, operating from 71-76 GHz. It requires a 4V power supply and draws up to 450 mA current. Ideal for wideband medium-power applications in RF and microwave systems, it has a characteristic impedance of 50 ohms and operates b/w -55 °C to +85°C.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

76000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

PHEMT

HMC994ALP5E by Analog Devices

HMC994ALP5E

Analog Devices

HMC994ALP5E by Analog Devices is a PHEMT RF amplifier with 11 dB gain, operating up to 28 GHz. It features a max supply current of 300 mA and is designed for wideband medium power applications in a surface mount package with 32 terminals.

50 ohm

COMPONENT

11 dB

e3

SURFACE MOUNT

1

32

28000 MHz

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

300 mA

PHEMT

Matte Tin (Sn)

HMC998A by Analog Devices

HMC998A

Analog Devices

Analog Devices' HMC998A is a wide band medium power RF amplifier with 12 dB gain, operating from 0 to 22000 MHz. It can handle up to 27 dBm CW input power and has a max VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -55°C to 85°C.

50 ohm

COMPONENT

12 dB

27 dBm

22000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC8142-SX by Analog Devices

HMC8142-SX

Analog Devices

HMC8142-SX by Analog Devices is a wide band medium power RF amplifier with 19 dB gain. Operating from 81-86 GHz, it has a characteristic impedance of 50 ohm and consumes up to 450 mA at 4 V. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

E-PHEMT

HMC8142 by Analog Devices

HMC8142

Analog Devices

Analog Devices' HMC8142 is a wide band medium power RF amplifier with 19 dB gain, operating from 81-86 GHz. It features E-PHEMT technology, 50 ohm impedance, and consumes up to 450 mA at 4 V. Ideal for applications requiring high-frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

86000 MHz

81000 MHz

85 Cel

-55 Cel

DIE OR CHIP

4

WIDE BAND MEDIUM POWER

450 mA

E-PHEMT

HMC7229-SX by Analog Devices

HMC7229-SX

Analog Devices

Analog Devices' HMC7229-SX is a wide band medium power RF amplifier with 21.5 dB gain and 50 ohm impedance. It operates b/w 33-40 GHz, handles up to 21 dBm CW input power, and can be used in various RF & microwave applications due to its component construction.

50 ohm

COMPONENT

21.5 dB

21 dBm

40000 MHz

33000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC7229 by Analog Devices

HMC7229

Analog Devices

Analog Devices' HMC7229 is a wide band medium power RF amplifier with 21.5 dB gain and 50 ohm impedance. It operates b/w 33-40 GHz, handling up to 21 dBm CW input power. Ideal for RF & microwave applications, it can withstand temperatures from -55 °C to 85°C.

50 ohm

COMPONENT

21.5 dB

21 dBm

40000 MHz

33000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

MML25231HT1 by NXP Semiconductors

MML25231HT1

NXP Semiconductors

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Construction: COMPONENT;

50 ohm

COMPONENT

14.2 dB

20 dBm

e3

SURFACE MOUNT

1

8

4000 MHz

1000 MHz

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND MEDIUM POWER

65 mA

E-PHEMT

TIN

HMC797ALP5E by Analog Devices

HMC797ALP5E

Analog Devices

HMC797ALP5E by Analog Devices is a GAAS RF amplifier with 11dB gain, operating from 0-22000MHz. It has a max input power of 27dBm and VSWR of 7, suitable for wideband medium power applications. With a compact design and surface mount feature, it operates at temperatures ranging from -40 to 85 °C.

50 ohm

COMPONENT

11 dB

27 dBm

SURFACE MOUNT

1

32

22000 MHz

0 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

3.5,10

WIDE BAND MEDIUM POWER

440 mA

GAAS

7

HMC797APM5E by Analog Devices

HMC797APM5E

Analog Devices

HMC797APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. With a VSWR of 7, it operates from 0 to 22000 MHz, making it ideal for high-frequency applications in RF and microwave systems. The component has a temperature range of -40 to 85°C and features nickel palladium gold terminal finish.

50 ohm

COMPONENT

13 dB

27 dBm

e4

22000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

NICKEL PALLADIUM GOLD

7

HMC797A by Analog Devices

HMC797A

Analog Devices

Analog Devices' HMC797A is a RF & Microwave Amplifier with 27 dBm CW input power, 7 VSWR, and 14 dB gain. Ideal for wide band medium power applications from 0-22000 MHz, it operates b/w -55 to 85 °C with a characteristic impedance of 50 ohm.

50 ohm

COMPONENT

14 dB

27 dBm

22000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC863ALC4 by Analog Devices

HMC863ALC4

Analog Devices

Analog Devices' HMC863ALC4 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for RF and microwave applications requiring high performance in the -40 to 85°C temperature range.

50 ohm

COMPONENT

20.5 dB

26 dBm

e4

29500 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

Gold (Au) - with Nickel (Ni) barrier

7

HMC907APM5E by Analog Devices

HMC907APM5E

Analog Devices

HMC907APM5E by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. It operates from 200 MHz to 22 GHz, has a VSWR of 7, and requires a 10V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

HMC907A by Analog Devices

HMC907A

Analog Devices

HMC907A by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12.5 dB gain. Ideal for wide band medium power applications, it operates from -55°C to 85°C within the frequency range of 200 MHz to 22 GHz.

50 ohm

COMPONENT

12.5 dB

25 dBm

22000 MHz

200 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC994APM5E by Analog Devices

HMC994APM5E

Analog Devices

Analog Devices' HMC994APM5E is a wide band medium power RF amplifier with 13 dB gain and 25 dBm CW input power. With a VSWR of 7, it operates from -40°C to 85°C, covering frequencies from 0 MHz to 28 GHz. Ideal for RF and microwave applications requiring high performance amplification in various environments.

50 ohm

COMPONENT

13 dB

25 dBm

28000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

HMC994A by Analog Devices

HMC994A

Analog Devices

Analog Devices' HMC994A is a wide band medium power RF amplifier with 12.5 dB gain, handling up to 25 dBm CW input power. With a VSWR of 7, it operates from -55°C to 85°C, making it ideal for various RF and microwave applications up to 30 GHz.

50 ohm

COMPONENT

12.5 dB

25 dBm

30000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC998APM5E by Analog Devices

HMC998APM5E

Analog Devices

HMC998APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. It operates from 0 to 22000 MHz, suitable for various RF applications. With a VSWR of 7, it offers reliable performance in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

13 dB

27 dBm

e4

22000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

NICKEL PALLADIUM GOLD

7

HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

HMC637BPM5E by Analog Devices

HMC637BPM5E

Analog Devices

Analog Devices' HMC637BPM5E is a GAAS RF amplifier with 12.5 dB gain, operating from 0 to 7500 MHz. It has a max input power of 25 dBm and VSWR of 7, suitable for wideband medium-power applications in RF & microwave systems. With a compact surface-mount construction and operating temperatures from -55°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

12.5 dB

25 dBm

e4

SURFACE MOUNT

1

32

7500 MHz

0 MHz

85 Cel

-55 Cel

LCC32,.2SQ,20

12

WIDE BAND MEDIUM POWER

GAAS

Nickel/Palladium/Gold (Ni/Pd/Au)

7

HMC906A by Analog Devices

HMC906A

Analog Devices

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Gain: 25 dB; Minimum Operating Temperature: -55 Cel; Maximum Input Power (CW): 20 dBm; Minimum Operating Frequency: 27300 MHz;

50 ohm

COMPONENT

25 dB

20 dBm

33500 MHz

27300 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC637BPM5ETR by Analog Devices

HMC637BPM5ETR

Analog Devices

Analog Devices' HMC637BPM5ETR is a GAAS RF amplifier with 12.5 dB gain, 50 ohm impedance, and 25 dBm CW input power. It operates from 0 to 7500 MHz, suitable for wideband medium-power applications in RF & microwave systems. With a compact surface-mount design and high VSWR tolerance of 7, it's ideal for various communication and radar systems.

50 ohm

COMPONENT

12.5 dB

25 dBm

e4

SURFACE MOUNT

1

32

7500 MHz

0 MHz

85 Cel

-55 Cel

LCC32,.2SQ,20

12

WIDE BAND MEDIUM POWER

GAAS

Nickel/Palladium/Gold (Ni/Pd/Au)

7