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NARROW BAND LOW POWER RF & Microwave Amplifiers 38

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
SKY67107-306LF by Skyworks Solutions

SKY67107-306LF

Skyworks Solutions

SKY67107-306LF by Skyworks Solutions is a RF amplifier with 29 dB gain, operating b/w 2300-2800 MHz. It can handle up to 15 dBm CW input power and operates in temperatures ranging from -40 to 85°C. Ideal for narrow band low power applications.

COMPONENT

29 dB

15 dBm

2800 MHz

2300 MHz

85 Cel

-40 Cel

NARROW BAND LOW POWER

BGA231L7E6327XTSA1 by Infineon Technologies

BGA231L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 1550 MHz; Maximum Input Power (CW): 0 dBm;

50 ohm

COMPONENT

16 dB

0 dBm

1615 MHz

1550 MHz

85 Cel

-40 Cel

NARROW BAND LOW POWER

BGA231N7E6327XTSA2 by Infineon Technologies

BGA231N7E6327XTSA2

Infineon Technologies

BGA231N7E6327XTSA2 by Infineon Technologies is a narrow band low power RF amplifier with a gain of 16 dB. It operates b/w 1550-1615 MHz, handling up to 0 dBm CW input power. Ideal for applications requiring high performance in RF and microwave systems within -40 to 85°C temperature range.

50 ohm

COMPONENT

16 dB

0 dBm

e3

1615 MHz

1550 MHz

85 Cel

-40 Cel

NARROW BAND LOW POWER

Tin (Sn)

MAX2655EXT-T by Maxim Integrated

MAX2655EXT-T

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

12 dB

5 dBm

e0

SURFACE MOUNT

6

1700 MHz

1400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

2.7/5

NARROW BAND LOW POWER

RF/Microwave Amplifiers

11.1 mA

BIPOLAR

TIN LEAD

MAX2656EXT-T by Maxim Integrated

MAX2656EXT-T

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 1800 MHz;

50 ohm

COMPONENT

12 dB

5 dBm

e0

SURFACE MOUNT

6

2000 MHz

1800 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

2.7/5

NARROW BAND LOW POWER

RF/Microwave Amplifiers

15.2 mA

BIPOLAR

TIN LEAD

ACPM-7381-OR1 by Broadcom

ACPM-7381-OR1

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e4; Maximum Voltage Standing Wave Ratio: 2;

50 ohm

COMPONENT

13 dB

10 dBm

e4

SURFACE MOUNT

1

10

1980 MHz

1920 MHz

90 Cel

-20 Cel

PLASTIC/EPOXY

SOLCC10,.16,32

3.4

NARROW BAND LOW POWER

RF/Microwave Amplifiers

560 mA

Gold (Au)

2

ACPM-7311-BLKR by Broadcom

ACPM-7311-BLKR

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 90 Cel; Gain: 11.5 dB;

50 ohm

COMPONENT

11.5 dB

10 dBm

e4

SURFACE MOUNT

1

10

849 MHz

824 MHz

90 Cel

-20 Cel

PLASTIC/EPOXY

SOLCC10,.16,32

3.4

NARROW BAND LOW POWER

RF/Microwave Amplifiers

525 mA

Gold (Au)

10

MGA-68563-BLKG by Broadcom

MGA-68563-BLKG

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

50 ohm

COMPONENT

18 dB

21 dBm

e3

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

3

NARROW BAND LOW POWER

RF/Microwave Amplifiers

16 mA

GAAS

Tin (Sn)

MGA-68563-TR1G by Broadcom

MGA-68563-TR1G

Broadcom

Broadcom's MGA-68563-TR1G is a GAAS RF amplifier with 18 dB gain and 21 dBm CW input power. Featuring 6 terminals, it operates at 3V with 16mA supply current. Ideal for narrowband low-power RF applications, this surface-mount component has a characteristic impedance of 50 ohms.

50 ohm

COMPONENT

18 dB

21 dBm

e3

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

3

NARROW BAND LOW POWER

RF/Microwave Amplifiers

16 mA

GAAS

Tin (Sn)

MGA-68563-TR2G by Broadcom

MGA-68563-TR2G

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

50 ohm

COMPONENT

18 dB

21 dBm

e3

SURFACE MOUNT

1

6

PLASTIC/EPOXY

TSSOP6,.08

3

NARROW BAND LOW POWER

RF/Microwave Amplifiers

16 mA

GAAS

Tin (Sn)

MAX2244EBL by Maxim Integrated

MAX2244EBL

Maxim Integrated

NARROW BAND LOW POWER; Maximum Operating Temperature: 70 Cel; Construction: COMPONENT; Minimum Operating Temperature: 0 Cel; Terminal Finish: TIN LEAD; Minimum Operating Frequency: 2400 MHz;

50 ohm

COMPONENT

10 dBm

e0

2500 MHz

2400 MHz

70 Cel

0 Cel

NARROW BAND LOW POWER

TIN LEAD

6

ALM-2812-BLKG by Broadcom

ALM-2812-BLKG

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 2;

CMOS COMPATIBLE

50 ohm

COMPONENT

15 dB

5 dBm

SURFACE MOUNT

2

12

2500 MHz

2400 MHz

PLASTIC/EPOXY

LCC12,.12SQ,25

3.3

NARROW BAND LOW POWER

RF/Microwave Amplifiers

31 mA

GAAS

ALM-2812-TR1G by Broadcom

ALM-2812-TR1G

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 15 dB;

CMOS COMPATIBLE

50 ohm

COMPONENT

15 dB

5 dBm

SURFACE MOUNT

2

12

2500 MHz

2400 MHz

PLASTIC/EPOXY

LCC12,.12SQ,25

3.3

NARROW BAND LOW POWER

RF/Microwave Amplifiers

31 mA

GAAS

ALM-1322-BLKG by Broadcom

ALM-1322-BLKG

Broadcom

NARROW BAND LOW POWER; No. of Terminals: 22; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 22 dBm; Maximum Supply Current: 115 mA; No. of Functions: 2;

LOW NOISE

50 ohm

COMPONENT

28.5 dB

22 dBm

2

22

2200 MHz

1800 MHz

PLASTIC/EPOXY

MODULE,22LEAD,0.25

5

NARROW BAND LOW POWER

RF/Microwave Amplifiers

115 mA

ALM-1322-TR2G by Broadcom

ALM-1322-TR2G

Broadcom

NARROW BAND LOW POWER; No. of Terminals: 22; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 22 dBm; Additional Features: LOW NOISE; Maximum Supply Current: 115 mA;

LOW NOISE

50 ohm

COMPONENT

28.5 dB

22 dBm

2

22

2200 MHz

1800 MHz

PLASTIC/EPOXY

MODULE,22LEAD,0.25

5

NARROW BAND LOW POWER

RF/Microwave Amplifiers

115 mA

ACPM-7311-BLK by Broadcom

ACPM-7311-BLK

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: PLASTIC/EPOXY; Maximum Supply Current: 525 mA; Minimum Operating Frequency: 824 MHz;

50 ohm

COMPONENT

23.5 dB

10 dBm

SURFACE MOUNT

1

10

849 MHz

824 MHz

90 Cel

-20 Cel

PLASTIC/EPOXY

SOLCC10,.16,32

3.4

NARROW BAND LOW POWER

RF/Microwave Amplifiers

525 mA

2

MAX2373ETC by Maxim Integrated

MAX2373ETC

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 2.7; Maximum Operating Frequency: 940 MHz;

50 ohm

COMPONENT

10.5 dB

5 dBm

e0

SURFACE MOUNT

1

12

940 MHz

850 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC12,.12SQ,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

TIN LEAD

UPC8236T6N-E2-A by Renesas Electronics

UPC8236T6N-E2-A

Renesas Electronics

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

COMPONENT

17 dB

10 dBm

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC6,.06,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

8 mA

BIPOLAR

BGA2001,115 by NXP Semiconductors

BGA2001,115

NXP Semiconductors

NARROW BAND LOW POWER; Gain: 19.5 dB; JESD-609 Code: e3; Terminal Finish: Tin (Sn); Maximum Operating Frequency: 1800 MHz; Construction: COMPONENT;

LOW NOISE

50 ohm

COMPONENT

19.5 dB

e3

1800 MHz

900 MHz

NARROW BAND LOW POWER

Tin (Sn)

BGA2011,115 by NXP Semiconductors

BGA2011,115

NXP Semiconductors

NARROW BAND LOW POWER; Terminal Finish: Tin (Sn); Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 15 dB; JESD-609 Code: e3;

50 ohm

COMPONENT

15 dB

e3

NARROW BAND LOW POWER

Tin (Sn)

BGA2012,115 by NXP Semiconductors

BGA2012,115

NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 10 mA;

50 ohm

COMPONENT

14 dB

e3

SURFACE MOUNT

1

6

150 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

NARROW BAND LOW POWER

RF/Microwave Amplifiers

10 mA

BIPOLAR

Tin (Sn)

MAX2371EGC by Maxim Integrated

MAX2371EGC

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Maximum Input Power (CW): 5 dBm; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

10.5 dB

5 dBm

e0

SURFACE MOUNT

1

12

174 MHz

136 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.12SQ,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

Tin/Lead (Sn85Pb15)

AMF-4F-02200230-15-13P by L-3 Narda-miteq

AMF-4F-02200230-15-13P

L-3 Narda-miteq

AMF-4F-02200230-15-13P by L-3 Narda-miteq is a COAXIAL RF amplifier with 58 dB Gain, VSWR of 1.5, operating from 2200 MHz to 2300 MHz. Ideal for narrowband low-power applications in RF & Microwave systems.

SMA-F

COAXIAL

58 dB

2300 MHz

2200 MHz

NARROW BAND LOW POWER

1.5

MAX2373EGC-T by Maxim Integrated

MAX2373EGC-T

Maxim Integrated

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Package Equivalence Code: LCC12,.12SQ,20; Maximum Input Power (CW): 5 dBm;

50 ohm

COMPONENT

10.5 dB

5 dBm

e0

SURFACE MOUNT

1

12

940 MHz

850 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.12SQ,20

2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

Tin/Lead (Sn/Pb)

CC2590RGVT by Texas Instruments

CC2590RGVT

Texas Instruments

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Terminal Finish: NICKEL PALLADIUM GOLD;

LOW NOISE

COMPONENT

14.1 dB

10 dBm

e4

SURFACE MOUNT

1

16

2483.5 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

3

NARROW BAND LOW POWER

NICKEL PALLADIUM GOLD

WS1103-TR1 by Broadcom

WS1103-TR1

Broadcom

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 849 MHz;

50 ohm

COMPONENT

14 dB

10 dBm

SURFACE MOUNT

1

8

849 MHz

824 MHz

85 Cel

-30 Cel

PLASTIC/EPOXY

SOLCC8,.11,32

3.4

NARROW BAND LOW POWER

RF/Microwave Amplifiers

515 mA

2.5

CC2590RGVRG4 by Texas Instruments

CC2590RGVRG4

Texas Instruments

CC2590RGVRG4 by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and is ideal for narrowband low-power applications in temperatures ranging from -40 to 85°C.

LOW NOISE

COMPONENT

14.1 dB

10 dBm

e4

SURFACE MOUNT

1

16

2483.5 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

3

NARROW BAND LOW POWER

NICKEL PALLADIUM GOLD

ALM-1712-BLKG by Broadcom

ALM-1712-BLKG

Broadcom

NARROW BAND LOW POWER; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: MODULE,12LEAD(UNSPEC); Maximum Input Power (CW): 15 dBm; Gain: 11 dB;

LOW NOISE

50 ohm

COMPONENT

11 dB

15 dBm

1

12

PLASTIC/EPOXY

MODULE,12LEAD(UNSPEC)

1.8/2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

15 mA

ALM-1712-TR1G by Broadcom

ALM-1712-TR1G

Broadcom

NARROW BAND LOW POWER; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Maximum Supply Current: 15 mA; No. of Functions: 1; Gain: 11 dB;

LOW NOISE

50 ohm

COMPONENT

11 dB

15 dBm

1

12

PLASTIC/EPOXY

MODULE,12LEAD(UNSPEC)

1.8/2.7

NARROW BAND LOW POWER

RF/Microwave Amplifiers

15 mA

SKY67100-396LF by Skyworks Solutions

SKY67100-396LF

Skyworks Solutions

SKY67100-396LF by Skyworks Solutions is a 50 ohm RF amplifier with 16.1 dB gain, operating b/w 1200-3000 MHz. It can handle up to 20 dBm CW input power and temperatures from -40 to 85°C. Ideal for narrowband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

16.1 dB

20 dBm

3000 MHz

1200 MHz

85 Cel

-40 Cel

NARROW BAND LOW POWER

HMC716ALP3ETR by Analog Devices

HMC716ALP3ETR

Analog Devices

HMC716ALP3ETR by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 50 ohm impedance. It has a max input power of 10 dBm and VSWR of 1.38, suitable for narrow band low power applications in the RF & Microwave field. The component is constructed using GaAs technology and can operate b/w -40 to 85 °C temperature range.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38

BGA428H6327XTSA1 by Infineon Technologies

BGA428H6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 8 dBm; Gain: 20 dB; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel;

50 ohm

COMPONENT

20 dB

8 dBm

85 Cel

-40 Cel

NARROW BAND LOW POWER

BGA715L7E6327XTSA1 by Infineon Technologies

BGA715L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Additional Features: LOW NOISE; Maximum Input Power (CW): 10 dBm;

LOW NOISE

50 ohm

COMPONENT

20 dB

10 dBm

85 Cel

-40 Cel

NARROW BAND LOW POWER

BGA751L7E6327XTSA1 by Infineon Technologies

BGA751L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Maximum Operating Frequency: 885 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -30 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT;

LOW NOISE

50 ohm

COMPONENT

15.8 dB

4 dBm

885 MHz

875 MHz

85 Cel

-30 Cel

NARROW BAND LOW POWER

HMC716ALP3E by Analog Devices

HMC716ALP3E

Analog Devices

HMC716ALP3E by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 10 dBm CW input power. It is ideal for narrow band low power applications requiring a max VSWR of 1.38 in plastic/epoxy package construction.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38

HMC618ALP3E by Analog Devices

HMC618ALP3E

Analog Devices

HMC618ALP3E by Analog Devices is a PHEMT RF amplifier with 12.5 dB gain, operating b/w 1200-2200 MHz. It has a max input power of 10 dBm and requires a 5V power supply, making it ideal for narrowband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with surface mounting feature, suitable for temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

12.5 dB

10 dBm

e3

SURFACE MOUNT

1

16

2200 MHz

1200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

NARROW BAND LOW POWER

65 mA

PHEMT

MATTE TIN

BGA748N16E6327 by Infineon Technologies

BGA748N16E6327

Infineon Technologies

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 2110 MHz; Gain: 18 dB; Additional Features: LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ; Minimum Operating Temperature: -30 Cel;

LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ

50 ohm

COMPONENT

18 dB

4 dBm

2170 MHz

2110 MHz

85 Cel

-30 Cel

NARROW BAND LOW POWER

MMZ38333BT1 by NXP Semiconductors

MMZ38333BT1

NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Power Supplies (V): 5;

50 ohm

COMPONENT

36.3 dB

30 dBm

e3

SURFACE MOUNT

1

24

3800 MHz

3400 MHz

PLASTIC/EPOXY

LCC24,.16SQ,20

5

NARROW BAND LOW POWER

1200 mA

HYBRID

TIN

1.58