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6 RF & Microwave Amplifiers 83

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
BGA2748,115 by NXP Semiconductors

BGA2748,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin (Sn); Power Supplies (V): 3;

LOW NOISE

50 ohm

COMPONENT

18.5 dB

10 dBm

e3

SURFACE MOUNT

1

6

2000 MHz

1000 MHz

PLASTIC/EPOXY

TSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

8 mA

Tin (Sn)

BGA2771,115 by NXP Semiconductors

BGA2771,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 10 dBm;

50 ohm

COMPONENT

20.8 dB

10 dBm

e3

SURFACE MOUNT

1

6

2000 MHz

1000 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

45 mA

BIPOLAR

Tin (Sn)

BGM1014,115 by NXP Semiconductors

BGM1014,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Characteristic Impedance: 50 ohm;

LOW NOISE

50 ohm

COMPONENT

25 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

25 mA

BIPOLAR

Tin (Sn)

BGM1013,115 by NXP Semiconductors

BGM1013,115

NXP Semiconductors

NXP Semiconductors' BGM1013,115 is a wide band low power RF amplifier with 24 dB gain and 100-3000 MHz frequency range. It operates at -40 to 85°C, draws 33 mA at 5V, and has a max input power of -10 dBm. This component is ideal for applications requiring surface mount amplifiers in the RF & Microwave field.

LOW NOISE

50 ohm

COMPONENT

24 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

33 mA

BIPOLAR

Tin (Sn)

BGM1012,115 by NXP Semiconductors

BGM1012,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

50 ohm

COMPONENT

16 dB

10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

19 mA

BIPOLAR

Tin (Sn)

BGA2717,115 by NXP Semiconductors

BGA2717,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; Gain: 20 dB;

50 ohm

COMPONENT

20 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

10 mA

Tin (Sn)

BGA2716,115 by NXP Semiconductors

BGA2716,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

50 ohm

COMPONENT

19 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

21 mA

BIPOLAR

Tin (Sn)

BGA2715,115 by NXP Semiconductors

BGA2715,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Gain: 18 dB;

50 ohm

COMPONENT

18 dB

-10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

5.5 mA

Tin (Sn)

BGA2714,115 by NXP Semiconductors

BGA2714,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;

50 ohm

COMPONENT

16 dB

e3

SURFACE MOUNT

1

6

2700 MHz

0 MHz

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

5.7 mA

BIPOLAR

Tin (Sn)

BGA2712,115 by NXP Semiconductors

BGA2712,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 100 MHz;

50 ohm

COMPONENT

16 dB

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

15 mA

BIPOLAR

Tin (Sn)

BGA2709,115 by NXP Semiconductors

BGA2709,115

NXP Semiconductors

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 32 mA;

50 ohm

COMPONENT

18 dB

10 dBm

e3

SURFACE MOUNT

1

6

3000 MHz

100 MHz

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

32 mA

BIPOLAR

Tin (Sn)

AVT-50663-BLKG by Broadcom

AVT-50663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

13.8 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

39.5 mA

BIPOLAR

Tin (Sn)

AVT-50663-TR1G by Broadcom

AVT-50663-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

13.8 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

39.5 mA

BIPOLAR

Tin (Sn)

AVT-52663-BLKG by Broadcom

AVT-52663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -40 Cel;

50 ohm

COMPONENT

13.8 dB

18 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

49 mA

BIPOLAR

Tin (Sn)

AVT-52663-TR1G by Broadcom

AVT-52663-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

50 ohm

COMPONENT

13.8 dB

18 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

49 mA

BIPOLAR

Tin (Sn)

MGA-645T6-TR1G by Broadcom

MGA-645T6-TR1G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1500 MHz;

LOW NOISE

50 ohm

COMPONENT

13.5 dB

15 dBm

e4

SURFACE MOUNT

1

6

3000 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-645T6-TR2G by Broadcom

MGA-645T6-TR2G

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

LOW NOISE

50 ohm

COMPONENT

13.5 dB

15 dBm

e4

SURFACE MOUNT

1

6

3000 MHz

1500 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Gold (Au) - with Nickel (Ni) barrier

MAX2644EXT-T by Maxim Integrated

MAX2644EXT-T

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: TIN LEAD;

50 ohm

COMPONENT

15 dB

5 dBm

e0

SURFACE MOUNT

1

6

2500 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND MEDIUM POWER

11 mA

BIPOLAR

TIN LEAD

MAX2641EUT by Maxim Integrated

MAX2641EUT

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 6.4 mA;

50 ohm

COMPONENT

12.4 dB

5 dBm

e0

SURFACE MOUNT

1

6

2500 MHz

1400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSOP6,.11,37

3/5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

6.4 mA

BIPOLAR

TIN LEAD

SMA661ASTR by STMicroelectronics

SMA661ASTR

STMicroelectronics

SMA661ASTR by STMicroelectronics is a wide-band low-power RF amplifier with 18 dB gain, operating b/w -40 °C and 85 °C. It features a 6-terminal surface mount design and requires a power supply of 2.7V. Ideal for RF applications in compact devices.

LOW NOISE

50 ohm

COMPONENT

18 dB

e4

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

FL6,.047,20

2.7

WIDE BAND LOW POWER

RF/Microwave Amplifiers

BICMOS

Nickel/Palladium/Gold (Ni/Pd/Au)

THS9000DRWR by Texas Instruments

THS9000DRWR

Texas Instruments

THS9000DRWR by Texas Instruments is a wide band medium power RF amplifier with 15.7 dB gain, operating from 50 MHz to 400 MHz. It has a max supply current of 100 mA and operates in temperatures ranging from -40°C to 85°C. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

50 ohm

COMPONENT

15.7 dB

e4

SURFACE MOUNT

1

6

400 MHz

50 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

5

WIDE BAND MEDIUM POWER

100 mA

NICKEL PALLADIUM GOLD SILVER

AVT-51663-BLKG by Broadcom

AVT-51663-BLKG

Broadcom

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

50 ohm

COMPONENT

18 dB

15 dBm

e3

SURFACE MOUNT

1

6

6000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

40 mA

BIPOLAR

Tin (Sn)

MGA-635T6-BLKG by Broadcom

MGA-635T6-BLKG

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12.5 dB;

CMOS COMPATIBLE

COMPONENT

12.5 dB

10 dBm

e4

SURFACE MOUNT

1

6

2400 MHz

900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

1/2.85

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

10 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-635T6-TR1G by Broadcom

MGA-635T6-TR1G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;

CMOS COMPATIBLE

COMPONENT

12.5 dB

10 dBm

e4

SURFACE MOUNT

1

6

2400 MHz

900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

1/2.85

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

10 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

MGA-635T6-TR2G by Broadcom

MGA-635T6-TR2G

Broadcom

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

CMOS COMPATIBLE

COMPONENT

12.5 dB

10 dBm

e4

SURFACE MOUNT

1

6

2400 MHz

900 MHz

PLASTIC/EPOXY

SOLCC6,.08,20

1/2.85

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

10 mA

GAAS

Gold (Au) - with Nickel (Ni) barrier

HMC8412LP2FETR by Analog Devices

HMC8412LP2FETR

Analog Devices

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

12 dB

25 dBm

e4

SURFACE MOUNT

1

6

11000 MHz

400 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

1.375

HMC8412LP2FE by Analog Devices

HMC8412LP2FE

Analog Devices

Analog Devices' HMC8412LP2FE is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for surface mount applications in RF & microwave systems.

50 ohm

COMPONENT

12 dB

25 dBm

e4

SURFACE MOUNT

1

6

11000 MHz

400 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

1.375

ADL8121ACPZN by Analog Devices

ADL8121ACPZN

Analog Devices

ADL8121ACPZN by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications in the RF & microwave field, it operates from -40°C to 85°C with a frequency range of 25MHz to 12GHz.

50 ohm

COMPONENT

15 dB

32 dBm

SURFACE MOUNT

1

6

12000 MHz

25 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

PHEMT

1.43

ADL8121ACPZN-R7 by Analog Devices

ADL8121ACPZN-R7

Analog Devices

ADL8121ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications from 25MHz to 12GHz, it operates b/w -40°C to +85°C with a characteristic impedance of 50Ω. Suitable for surface mount installations with a 5V power supply requirement.

50 ohm

COMPONENT

15 dB

32 dBm

SURFACE MOUNT

1

6

12000 MHz

25 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

PHEMT

1.43

MAX2644EXT by Maxim Integrated

MAX2644EXT

Maxim Integrated

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 2400 MHz;

50 ohm

COMPONENT

15 dB

5 dBm

e4

SURFACE MOUNT

1

6

2500 MHz

2400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND MEDIUM POWER

11 mA

BIPOLAR

NICKEL PALLADIUM GOLD

UPC2746TB-E3-A by Renesas Electronics

UPC2746TB-E3-A

Renesas Electronics

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

SURFACE MOUNT

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

3

WIDE BAND LOW POWER

RF/Microwave Amplifiers

10 mA

BIPOLAR

HMC7748 by Analog Devices

HMC7748

Analog Devices

Analog Devices' HMC7748 is a wide band high power RF amplifier with 58 dB gain, operating from 2-6 GHz. It has a max input power of 8 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF & microwave systems. The component is constructed with plastic/epoxy package body material and can be surface mounted, making it versatile for various temperature environments.

50 ohm

COMPONENT

58 dB

8 dBm

SURFACE MOUNT

1

6

6000 MHz

2000 MHz

70 Cel

-40 Cel

PLASTIC/EPOXY

MODULE,6LEAD,2.9

12,28

WIDE BAND HIGH POWER

4000 mA

6

CMPA5259050F by Wolfspeed

CMPA5259050F

Wolfspeed

The Wolfspeed CMPA5259050F is a ceramic RF amplifier with 31dB gain, operating b/w 5200-5900 MHz. It features PHEMT technology, 50 ohm impedance, and can handle up to 28V power supplies. Ideal for wideband high-power applications requiring surface mounting in temperatures ranging from -40 to 105°C.

50 ohm

COMPONENT

31 dB

SURFACE MOUNT

1

6

5900 MHz

5200 MHz

105 Cel

-40 Cel

CERAMIC

28

WIDE BAND HIGH POWER

1000 mA

PHEMT

3

HMC8413LP2FETR by Analog Devices

HMC8413LP2FETR

Analog Devices

HMC8413LP2FETR by Analog Devices is a wide band medium power RF amplifier with 17 dB gain, suitable for frequencies ranging from 10 MHz to 9000 MHz. It has a max input power of 25 dBm and VSWR of 1.29, making it ideal for RF and microwave applications requiring high performance amplification in the temperature range of -40°C to 85°C.

50 ohm

COMPONENT

17 dB

25 dBm

SURFACE MOUNT

1

6

9000 MHz

10 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND MEDIUM POWER

PHEMT

1.29

UPC2710TB-A by Renesas Electronics

UPC2710TB-A

Renesas Electronics

Renesas Electronics UPC2710TB-A is a wide band low power RF amplifier with 33 dB gain, operating up to 1000 MHz. It has a max input power of 10 dBm and VSWR of 1.67, suitable for RF applications requiring high performance in plastic/epoxy package.

50 ohm

COMPONENT

33 dB

10 dBm

SURFACE MOUNT

1

6

1000 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TSSOP6,.08

5

WIDE BAND LOW POWER

29 mA

BIPOLAR

1.67