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MILITARY SRAM 10

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
SMV512K32HFG by Texas Instruments

SMV512K32HFG

Texas Instruments

Texas Instruments' SMV512K32HFG is a 512Kx32 SRAM with 22MHz clock frequency, operating at -55 to 125°C. It features common I/O type, 3-STATE output characteristics, and gold terminal finish. Ideal for military applications requiring fast access times and low standby current consumption.

20 ns

22 MHz

COMMON

R-CQFP-F76

e4

25.31 mm

16777216 bit

STANDARD SRAM

32

1

1

76

524288 words

512K

ASYNCHRONOUS

125 Cel

-55 Cel

512KX32

3-STATE

YES

CERAMIC, METAL-SEALED COFIRED

GQFF

TPAK76,2SQ,25

RECTANGULAR

FLATPACK, GUARD RING

PARALLEL

1.8

Not Qualified

38535V;38534K;883S

2.67 mm

.00033 Amp

1.7 V

SRAMs

635 mA

3.6 V

3 V

1.8

YES

CMOS

MILITARY

GOLD

FLAT

.64 mm

QUAD

20.46 mm

M74HC670B1R by STMicroelectronics

M74HC670B1R

STMicroelectronics

STMicroelectronics M74HC670B1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, CMOS technology, and 3-STATE output. Ideal for military applications due to its -55 to 125 °C temperature range and through-hole terminal form.

280 ns

R-PDIP-T16

e3

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP16,.3

RECTANGULAR

IN-LINE

PARALLEL

2/6

Not Qualified

5.1 mm

Other Memory ICs

6 V

2 V

4.5

NO

CMOS

MILITARY

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

M74HC670M1R by STMicroelectronics

M74HC670M1R

STMicroelectronics

STMicroelectronics M74HC670M1R is a 16-bit SRAM with 4x4 organization, operating at 2-6V. It features 280ns access time, operates in asynchronous mode, and has a temperature range of -55 to 125 °C. Ideal for military applications due to its small outline package and CMOS technology.

280 ns

R-PDSO-G16

e4

9.9 mm

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

2/6

Not Qualified

1.75 mm

Other Memory ICs

6 V

2 V

4.5

YES

CMOS

MILITARY

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

SNJ54LS670FK by Texas Instruments

SNJ54LS670FK

Texas Instruments

SNJ54LS670FK by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features a max clock frequency of 35MHz and has an access time of 45ns. Ideal for military applications requiring high-speed memory in a compact chip carrier package.

45 ns

35 MHz

S-CQCC-N20

e0

8.89 mm

16 bit

STANDARD SRAM

4

1

1

20

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

CERAMIC, METAL-SEALED COFIRED

QCCN

LCC20,.35SQ

SQUARE

CHIP CARRIER

PARALLEL

5

Not Qualified

MIL-PRF-38535

2.03 mm

.05 Amp

Other Memory ICs

5.25 V

4.75 V

5

YES

TTL

MILITARY

TIN LEAD

NO LEAD

1.27 mm

QUAD

8.89 mm

HT6256DC by Honeywell

HT6256DC

Honeywell

Honeywell's HT6256DC is a 32Kx8 SRAM with 3-STATE output, operating at -55 to 225°C. It features a parallel interface, 50ns access time, and MILITARY temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

50 ns

COMMON

R-CDIP-T28

e0

35.56 mm

262144 bit

STANDARD SRAM

8

1

28

32768 words

32K

ASYNCHRONOUS

225 Cel

-55 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.445 mm

.00033 Amp

2.5 V

SRAMs

4 mA

5.5 V

4.5 V

5

NO

MOS

MILITARY

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CD74HCT670M96G4 by Texas Instruments

CD74HCT670M96G4

Texas Instruments

CD74HCT670M96G4 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It has a max access time of 53ns and operates in parallel mode. This memory IC is ideal for military-grade applications requiring fast and reliable data storage.

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

2/6

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

CD74HCT670MTG4 by Texas Instruments

CD74HCT670MTG4

Texas Instruments

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

2/6

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

SNJ54LS670W by Texas Instruments

SNJ54LS670W

Texas Instruments

SNJ54LS670W by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features a max clock frequency of 35MHz and offers an access time of 45ns. Ideal for military applications requiring fast and reliable memory storage in a compact flatpack package.

45 ns

35 MHz

R-GDFP-F16

e0

10.3 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

3-STATE

NO

CERAMIC, GLASS-SEALED

DFP

FL16,.3

RECTANGULAR

FLATPACK

PARALLEL

5

Not Qualified

MIL-PRF-38535

2.03 mm

.05 Amp

Other Memory ICs

5.25 V

4.75 V

5

YES

TTL

MILITARY

TIN LEAD

FLAT

1.27 mm

DUAL

6.73 mm

CD74HCT670M96E4 by Texas Instruments

CD74HCT670M96E4

Texas Instruments

CD74HCT670M96E4 by Texas Instruments is a 16-bit SRAM with 4x4 organization, operating at 5V. It features an asynchronous mode, parallel interface, and max access time of 53ns. Ideal for military-grade applications requiring fast and reliable memory storage in a compact small outline package.

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

CD74HCT670MTE4 by Texas Instruments

CD74HCT670MTE4

Texas Instruments

STANDARD SRAM; Temperature Grade: MILITARY; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;

53 ns

R-PDSO-G16

9.9 mm

16 bit

STANDARD SRAM

4

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-55 Cel

4X4

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

MILITARY

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm