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90 SRAM 3

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS61WV51232BLL-10BLI by Integrated Silicon Solution

IS61WV51232BLL-10BLI

Integrated Silicon Solution

IS61WV51232BLL-10BLI by Integrated Silicon Solution is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a low profile grid array package and is ideal for industrial applications requiring fast and reliable parallel memory storage. With a memory density of 16Mbit, it offers high-speed data retrieval in harsh environments.

10 ns

R-PBGA-B90

e1

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1.45 mm

3.6 V

2.4 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10

8 mm

AS7C351232-10BINTR by Alliance Memory

AS7C351232-10BINTR

Alliance Memory

Alliance Memory's AS7C351232-10BINTR is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. Ideal for industrial applications, it features a thin profile grid array package and CMOS technology for reliable performance in harsh environments.

10 ns

R-PBGA-B90

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

AS7C351232-10BIN by Alliance Memory

AS7C351232-10BIN

Alliance Memory

Alliance Memory's AS7C351232-10BIN is a 512Kx32 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package and is ideal for industrial applications requiring fast parallel memory solutions.

10 ns

R-PBGA-B90

13 mm

16777216 bit

STANDARD SRAM

32

3

1

90

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm