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165 SRAM 85

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
UPD46184184BF1-E40-EQ1-A by Renesas Electronics

UPD46184184BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;

.45 ns

250 MHz

COMMON

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.7 V

SRAMs

400 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184185BF1-E33Y-EQ1-A by Renesas Electronics

UPD46184185BF1-E33Y-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-609 Code: e6;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184185BF1-E40-EQ1-A by Renesas Electronics

UPD46184185BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words: 1048576 words;

.45 ns

250 MHz

SEPARATE

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.38 Amp

1.7 V

SRAMs

480 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184362BF1-E33-EQ1-A by Renesas Electronics

UPD46184362BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 512KX36;

.45 ns

300 MHz

COMMON

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

.43 Amp

1.7 V

SRAMs

510 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46184362BF1-E40-EQ1-A by Renesas Electronics

UPD46184362BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Pitch: 1 mm;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

DDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185092BF1-E40-EQ1-A by Renesas Electronics

UPD46185092BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 2MX9;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185094BF1-E33-EQ1-A by Renesas Electronics

UPD46185094BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185094BF1-E40-EQ1-A by Renesas Electronics

UPD46185094BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.46 mm;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

9

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185182BF1-E33-EQ1-A by Renesas Electronics

UPD46185182BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 18;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185182BF1-E40-EQ1-A by Renesas Electronics

UPD46185182BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 18874368 bit;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185184BF1-E40Y-EQ1-A by Renesas Electronics

UPD46185184BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX18;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

18

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185362BF1-E33-EQ1-A by Renesas Electronics

UPD46185362BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185364BF1-E40-EQ1-A by Renesas Electronics

UPD46185364BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN BISMUTH;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46185364BF1-E40Y-EQ1-A by Renesas Electronics

UPD46185364BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Technology: CMOS;

.45 ns

R-PBGA-B165

e6

15 mm

18874368 bit

QDR SRAM

36

1

165

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364182BF1-E33-EQ1-A by Renesas Electronics

UPD46364182BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Width: 18;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364362BF1-E33-EQ1-A by Renesas Electronics

UPD46364362BF1-E33-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX36;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364362BF1-E40Y-EQ1-A by Renesas Electronics

UPD46364362BF1-E40Y-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.46 mm;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46364365BF1-E40-EQ1-A by Renesas Electronics

UPD46364365BF1-E40-EQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

DDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365084BF1-E40-EQ1-A by Renesas Electronics

UPD46365084BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

.45 ns

R-PBGA-B165

e6

15 mm

33554432 bit

QDR SRAM

8

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365092BF1-E40-EQ1-A by Renesas Electronics

UPD46365092BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 37748736 bit;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

9

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365094BF1-E40-EQ1-A by Renesas Electronics

UPD46365094BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN BISMUTH;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

9

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX9

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365182BF1-E40-EQ1-A by Renesas Electronics

UPD46365182BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365184BF1-E33-EQ1-A by Renesas Electronics

UPD46365184BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Access Time: .45 ns;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365184BF1-E33Y-EQ1-A by Renesas Electronics

UPD46365184BF1-E33Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Width: 13 mm;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365184BF1-E40Y-EQ1-A by Renesas Electronics

UPD46365184BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

18

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX18

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365362BF1-E33-EQ1-A by Renesas Electronics

UPD46365362BF1-E33-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Organization: 1MX36;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365362BF1-E40Y-EQ1-A by Renesas Electronics

UPD46365362BF1-E40Y-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

UPD46365364BF1-E40-EQ1-A by Renesas Electronics

UPD46365364BF1-E40-EQ1-A

Renesas Electronics

QDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

.45 ns

R-PBGA-B165

e6

15 mm

37748736 bit

QDR SRAM

36

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.46 mm

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN BISMUTH

BALL

1 mm

BOTTOM

13 mm

71V3559S75BQI8 by Integrated Device Technology

71V3559S75BQI8

Integrated Device Technology

71V3559S75BQI8 by Integrated Device Technology is a CACHE SRAM with 256KX18 organization, operating at 3.3V. It features synchronous operation, thin profile grid array package style, and 7.5 ns max access time. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.

7.5 ns

R-PBGA-B165

e0

15 mm

4718592 bit

CACHE SRAM

18

3

1

165

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

225

1.2 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

13 mm

CY7C1518KV18-250BZXC by Cypress Semiconductor

CY7C1518KV18-250BZXC

Cypress Semiconductor

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 250 MHz;

.45 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PBGA-B165

e1

15 mm

75497472 bit

DDR SRAM

18

3

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

1.5/1.8,1.8

Not Qualified

1.4 mm

1.7 V

SRAMs

430 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

20

13 mm

CY7C1470BV25-200BZI by Cypress Semiconductor

CY7C1470BV25-200BZI

Cypress Semiconductor

ZBT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B165;

3 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PBGA-B165

e0

17 mm

75497472 bit

ZBT SRAM

36

3

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

2.5

Not Qualified

1.4 mm

2.38 V

SRAMs

450 mA

2.625 V

2.375 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

UPD44644182AF5-E40-FQ1-A by Renesas Electronics

UPD44644182AF5-E40-FQ1-A

Renesas Electronics

DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words Code: 4M;

.45 ns

250 MHz

COMMON

R-PBGA-B165

17 mm

75497472 bit

DDR SRAM

18

1

165

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX18

3-STATE

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY

PARALLEL

1.5/1.8,1.8

Not Qualified

1.46 mm

1.7 V

SRAMs

510 mA

1.9 V

1.7 V

1.8

YES

MOS

COMMERCIAL

BALL

1 mm

BOTTOM

15 mm

CY7C1440AV33-167BZC by Cypress Semiconductor

CY7C1440AV33-167BZC

Cypress Semiconductor

CY7C1440AV33-167BZC by Cypress Semiconductor is a 1MX36 CACHE SRAM with 1048576 words, 3.3V supply, and 3.4ns access time. It operates synchronously in commercial temperature range for applications requiring high-speed memory solutions.

3.4 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

e0

17 mm

37748736 bit

CACHE SRAM

36

3

1

165

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

Not Qualified

1.4 mm

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

BALL

1 mm

BOTTOM

15 mm

IS61LPS25636A-200B3LI by Integrated Silicon Solution

IS61LPS25636A-200B3LI

Integrated Silicon Solution

IS61LPS25636A-200B3LI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a synchronous mode and operates on a supply voltage of 2.5/3.3V, making it suitable for industrial applications requiring fast access times and high memory density. The package style is grid array with thin profile, ideal for space-constrained designs.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PBGA-B165

e1

15 mm

9437184 bit

CACHE SRAM

36

1

165

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.105 Amp

3.14 V

SRAMs

275 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

13 mm

IS61VPS204836B-250B3L-TR by Integrated Silicon Solution

IS61VPS204836B-250B3L-TR

Integrated Silicon Solution

IS61VPS204836B-250B3L-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates at 2.5V, has a memory width of 36 bits, and offers a max access time of 2.8 ns. Ideal for applications requiring fast synchronous memory with high storage capacity in commercial temperature environments.

2.8 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

15 mm

75497472 bit

CACHE SRAM

36

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

2.625 V

2.375 V

2.5

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

13 mm

IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution

IS61VPS204836B-250B3LI-TR

Integrated Silicon Solution

IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates in synchronous mode at 2.5V, with a max access time of 2.8 ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.

2.8 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

15 mm

75497472 bit

CACHE SRAM

36

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

2.625 V

2.375 V

2.5

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

13 mm

CY7C1380KV33-167BZIT by Infineon Technologies

CY7C1380KV33-167BZIT

Infineon Technologies

CACHE SRAM; No. of Terminals: 165; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 18874368 bit; Additional Features: PIPELINED OPERATION;

3.4 ns

PIPELINED OPERATION

167 MHz

COMMON

R-PBGA-B165

15 mm

18874368 bit

CACHE SRAM

36

3

1

1

165

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

3-STATE

YES

PLASTIC/EPOXY

LBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

.065 Amp

3.135 V

163 mA

3.6 V

3.135 V

3.3

YES

CMOS

BALL

1 mm

BOTTOM

13 mm