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100 SRAM 41

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C1380D-167AXCT by Cypress Semiconductor

CY7C1380D-167AXCT

Cypress Semiconductor

CY7C1380D-167AXCT by Cypress Semiconductor is a 512Kx36 SRAM with synchronous operation and 3-STATE output. It operates at a max clock frequency of 167 MHz, suitable for applications requiring fast access times such as networking equipment and high-performance computing systems. With a low profile flatpack package style and common I/O type, it offers reliable performance in compact designs.

3.4 ns

PIPELINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

e3

20 mm

18874368 bit

STANDARD SRAM

36

3

1

100

524288 words

512K

SYNCHRONOUS

70 Cel

0 Cel

512KX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.07 Amp

SRAMs

275 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

7024L55PFI by Integrated Device Technology

7024L55PFI

Integrated Device Technology

7024L55PFI by Integrated Device Technology is a 4Kx16 MULTI-PORT SRAM with 4096 words and 16 memory width. Operating at -40 to 85 °C, it has an access time of 55 ns and consumes a max current of 0.004 Amp. Ideal for industrial applications requiring fast data access in a compact FLATPACK package.

55 ns

COMMON

S-PQFP-G100

e0

65536 bit

MULTI-PORT SRAM

16

3

2

100

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX16

3-STATE

PLASTIC/EPOXY

QFP

QFP100,.63SQ,20

SQUARE

FLATPACK

PARALLEL

240

5

Not Qualified

.004 Amp

2 V

SRAMs

250 mA

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

70V25S25PFI8 by Integrated Device Technology

70V25S25PFI8

Integrated Device Technology

70V25S25PFI8 by Integrated Device Technology is an 8Kx16 MULTI-PORT SRAM with 3.3V supply, operating at -40 to 85°C. Featuring a fast access time of 25ns and low standby current of 0.015A, it's ideal for industrial applications requiring high-speed memory solutions.

25 ns

COMMON

S-PQFP-G100

e0

131072 bit

MULTI-PORT SRAM

16

3

2

100

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX16

3-STATE

PLASTIC/EPOXY

QFP

QFP100,.63SQ,20

SQUARE

FLATPACK

PARALLEL

240

3.3

Not Qualified

.015 Amp

3 V

SRAMs

190 mA

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.5 mm

QUAD

20

CY7C1347G-133AXCT by Cypress Semiconductor

CY7C1347G-133AXCT

Cypress Semiconductor

CY7C1347G-133AXCT by Cypress Semiconductor is a 128KX36 ZBT SRAM with 133 MHz clock frequency, 4 ns access time, and 3.3V supply voltage. Ideal for high-speed synchronous applications requiring fast memory access and low power consumption in commercial-grade environments.

4 ns

PIPELINED ARCHITECTURE

133 MHz

COMMON

R-PQFP-G100

e3

20 mm

4718592 bit

ZBT SRAM

36

3

1

100

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.04 Amp

3.14 V

SRAMs

225 mA

3.63 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

IS61LPS25618EC-200TQLI by Integrated Silicon Solution

IS61LPS25618EC-200TQLI

Integrated Silicon Solution

IS61LPS25618EC-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a low profile FLATPACK package and operates in industrial temperature range. Ideal for applications requiring fast access time and high memory density.

3.1 ns

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

4718592 bit

CACHE SRAM

18

3

1

100

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.085 Amp

3.14 V

SRAMs

220 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10

14 mm

IS61NLP102418B-200TQLI by Integrated Silicon Solution

IS61NLP102418B-200TQLI

Integrated Silicon Solution

IS61NLP102418B-200TQLI by Integrated Silicon Solution is a 1MX18 SRAM with 1048576 words, 18874368 bit memory density, and 3 ns max access time. Ideal for industrial applications requiring fast synchronous operation in a compact FLATPACK package with low profile design.

3 ns

R-PQFP-G100

20 mm

18874368 bit

STANDARD SRAM

18

1

100

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX18

PLASTIC/EPOXY

LQFP

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.6 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

QUAD

NOT SPECIFIED

14 mm

CY7C09099V-12AC by Cypress Semiconductor

CY7C09099V-12AC

Cypress Semiconductor

CY7C09099V-12AC by Cypress Semiconductor is a 128KX8 MULTI-PORT SRAM with synchronous operation and 3.3V power supply. It is commonly used in applications requiring high-speed data storage and retrieval, such as networking equipment and telecommunications systems.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

50 MHz

COMMON

S-PQFP-G100

e0

14 mm

1048576 bit

MULTI-PORT SRAM

8

3

1

2

100

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1.6 mm

.00025 Amp

3 V

SRAMs

205 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

14 mm

CY7C024AV-25AC by Cypress Semiconductor

CY7C024AV-25AC

Cypress Semiconductor

CY7C024AV-25AC by Cypress Semiconductor is a 4Kx16 SRAM with 3.3V supply, operating at 0-70°C. It features 25ns access time, 100 terminals in a square package, and is ideal for multi-port memory applications.

25 ns

COMMON

S-PQFP-G100

e0

14 mm

65536 bit

MULTI-PORT SRAM

16

3

1

2

100

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

3.3

Not Qualified

1.6 mm

.00005 Amp

2 V

SRAMs

165 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

14 mm

CY7C09349A-12AC by Cypress Semiconductor

CY7C09349A-12AC

Cypress Semiconductor

CY7C09349A-12AC by Cypress Semiconductor is a 4Kx18 SRAM with synchronous operation and 3-STATE output. It operates at 5V, has a max access time of 25ns, and is ideal for applications requiring multi-port memory solutions in commercial-grade environments.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

COMMON

S-PQFP-G100

e0

14 mm

73728 bit

MULTI-PORT SRAM

18

1

2

100

4096 words

4K

SYNCHRONOUS

70 Cel

0 Cel

4KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

5

Not Qualified

1.6 mm

.0005 Amp

4.5 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

QUAD

14 mm

CY7C1480V33-200AXCT by Cypress Semiconductor

CY7C1480V33-200AXCT

Cypress Semiconductor

CY7C1480V33-200AXCT by Cypress Semiconductor is a 3.3V CACHE SRAM with 2MX36 organization, operating synchronously at 70°C. It has a memory density of 75497472 bit and offers fast access time of 3 ns. Ideal for applications requiring high-speed data storage in commercial-grade environments.

3 ns

PIPELINED ARCHITECTURE

R-PQFP-G100

e3/e4

20 mm

75497472 bit

CACHE SRAM

36

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

PLASTIC/EPOXY

LQFP

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

Not Qualified

1.6 mm

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN/NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

14 mm

7008L20PFI8 by Integrated Device Technology

7008L20PFI8

Integrated Device Technology

7008L20PFI8 by Integrated Device Technology is a 64Kx8 SRAM with 3-STATE output, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch, suitable for industrial applications requiring fast access times of up to 20ns. This multi-port SRAM has a memory density of 524288 bits and can operate in parallel mode.

20 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7008S55PFI8 by Integrated Device Technology

7008S55PFI8

Integrated Device Technology

7008S55PFI8 by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable memory storage with common I/O type and 3-STATE output characteristics.

55 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN; LOW POWER STANDBY MODE

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

310 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7024L55PF8 by Integrated Device Technology

7024L55PF8

Integrated Device Technology

7024L55PF8 by Integrated Device Technology is a 4Kx16 MULTI-PORT SRAM with 55ns access time, operating at 5V. It features a low profile flatpack package with fine pitch and gull wing terminals, suitable for commercial temperature grade applications. With 4096 words and 16-bit memory width, it offers fast parallel data processing in various electronic systems.

55 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G100

e0

14 mm

65536 bit

MULTI-PORT SRAM

16

3

1

2

100

4096 words

4K

ASYNCHRONOUS

70 Cel

0 Cel

4KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

210 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7025S20PF8 by Integrated Device Technology

7025S20PF8

Integrated Device Technology

7025S20PF8 by Integrated Device Technology is an 8Kx16 SRAM with a memory density of 131072 bit. It operates at a nominal voltage of 5V and has an access time of 20ns. Ideal for applications requiring fast and reliable data storage in commercial-grade environments.

20 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE

COMMON

S-PQFP-G100

e0

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

290 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7025S25PF8 by Integrated Device Technology

7025S25PF8

Integrated Device Technology

7025S25PF8 by Integrated Device Technology is an 8Kx16 MULTI-PORT SRAM with a memory density of 131072 bit. It operates at a max access time of 25ns and has a supply voltage range from 4.5V to 5.5V, making it suitable for high-speed applications requiring fast data access and storage capabilities in commercial-grade environments.

25 ns

INTERRUPT FLAG; AUTOMATIC POWER-DOWN; SEMAPHORE

COMMON

S-PQFP-G100

e0

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

265 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

709289L9PFI by Integrated Device Technology

709289L9PFI

Integrated Device Technology

709289L9PFI by Integrated Device Technology is a synchronous SRAM with an organization of 64KX16. It operates at a max clock frequency of 66 MHz and has a memory density of 1,048,576 bits. This multi-port SRAM is commonly used in industrial applications requiring high-speed data storage and retrieval.

20 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

66 MHz

COMMON

S-PQFP-G100

e0

14 mm

1048576 bit

MULTI-PORT SRAM

16

3

1

2

100

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.006 Amp

4.5 V

SRAMs

430 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V261L25PFI8 by Integrated Device Technology

70V261L25PFI8

Integrated Device Technology

70V261L25PFI8 by Integrated Device Technology is a 16KX16 MULTI-PORT SRAM with a supply voltage of 3.3V. It operates asynchronously and has a max access time of 25ns. This SRAM is commonly used in industrial applications due to its low profile, fine pitch package style and wide temperature range (up to 85°C).

25 ns

INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN

COMMON

S-PQFP-G100

e0

14 mm

262144 bit

MULTI-PORT SRAM

16

3

1

2

100

16384 words

16K

ASYNCHRONOUS

85 Cel

-40 Cel

16KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

185 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V27L20PFI8 by Integrated Device Technology

70V27L20PFI8

Integrated Device Technology

70V27L20PFI8 by Integrated Device Technology is a 32Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a low profile FLATPACK package suitable for industrial applications, offering fast access time of 20 ns and common I/O type.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

16

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.006 Amp

3 V

SRAMs

230 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V27L35PFI8 by Integrated Device Technology

70V27L35PFI8

Integrated Device Technology

70V27L35PFI8 by Integrated Device Technology is a 32Kx16 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a fast access time of 35ns and is ideal for industrial applications requiring high-speed memory solutions.

35 ns

INTERRUPT FLAGS

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

16

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.006 Amp

3 V

SRAMs

235 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V37L20PFI8 by Integrated Device Technology

70V37L20PFI8

Integrated Device Technology

70V37L20PFI8 by Integrated Device Technology is a 32KX18 MULTI-PORT SRAM with 3.3V supply voltage, operating in ASYNCHRONOUS mode. It features a low profile FLATPACK package and offers fast access time of 20 ns. Ideal for industrial applications requiring high-speed memory operations.

20 ns

INTERRUPT FLAG

COMMON

S-PQFP-G100

e0

14 mm

589824 bit

MULTI-PORT SRAM

18

3

1

2

100

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

70V38L20PFI8 by Integrated Device Technology

70V38L20PFI8

Integrated Device Technology

70V38L20PFI8 by Integrated Device Technology is a 64Kx18 MULTI-PORT SRAM with 3.3V supply, operating in ASYNCHRONOUS mode. Featuring a low profile FLATPACK package, 0.5mm terminal pitch, and industrial temperature grade, it's ideal for high-speed parallel memory applications.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

1179648 bit

MULTI-PORT SRAM

18

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

3.3

Not Qualified

1.6 mm

.003 Amp

3 V

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7133LA25PFI8 by Integrated Device Technology

7133LA25PFI8

Integrated Device Technology

7133LA25PFI8 by Integrated Device Technology is a 2Kx16 MULTI-PORT SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package with 0.5mm terminal pitch, suitable for industrial applications requiring fast and reliable memory storage. The device supports asynchronous operation and offers 3-STATE output characteristics.

25 ns

COMMON

S-PQFP-G100

e0

14 mm

32768 bit

MULTI-PORT SRAM

16

3

1

2

100

2048 words

2K

ASYNCHRONOUS

85 Cel

-40 Cel

2KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.004 Amp

2 V

SRAMs

300 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

CY7C0241E-15AXI by Cypress Semiconductor

CY7C0241E-15AXI

Cypress Semiconductor

CY7C0241E-15AXI by Cypress is a 4Kx18 MULTI-PORT SRAM with 15ns access time, operating at -40 to 85°C. It has a supply voltage of 5V and consumes up to 305mA. Ideal for industrial applications requiring fast and reliable memory storage in a compact FLATPACK package.

15 ns

COMMON

S-PQFP-G100

e4

14 mm

73728 bit

MULTI-PORT SRAM

18

3

1

2

100

4096 words

4K

ASYNCHRONOUS

85 Cel

-40 Cel

4KX18

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

5

Not Qualified

1.6 mm

.0015 Amp

2 V

SRAMs

305 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

QUAD

40

14 mm

CY7C1383C-100AC by Cypress Semiconductor

CY7C1383C-100AC

Cypress Semiconductor

CY7C1383C-100AC by Cypress Semiconductor is a 1MX18 SRAM with 100 terminals, operating at 100 MHz. It has a synchronous mode and common I/O type, suitable for applications requiring fast access times and high memory density. The package is rectangular in shape, surface mountable, and operates at temperatures b/w 0 to 70°C.

8.5 ns

FLOW-THROUGH ARCHITECTURE

100 MHz

COMMON

R-PQFP-G100

e0

20 mm

18874368 bit

STANDARD SRAM

18

3

1

100

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

2.5/3.3,3.3

Not Qualified

1.6 mm

.07 Amp

3.14 V

SRAMs

175 mA

3.63 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

QUAD

14 mm

CY7C1463AV33-133AXC by Cypress Semiconductor

CY7C1463AV33-133AXC

Cypress Semiconductor

CY7C1463AV33-133AXC by Cypress Semiconductor is a 2MX18 ZBT SRAM with 133 MHz clock frequency, 6.5 ns access time, and 3.3V nominal voltage. It is used in applications requiring fast synchronous memory operations such as networking equipment and high-performance computing systems.

6.5 ns

FLOW-THROUGH ARCHITECTURE

133 MHz

COMMON

R-PQFP-G100

e3

20 mm

37748736 bit

ZBT SRAM

18

3

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.12 Amp

3.14 V

SRAMs

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C025-25AXC by Cypress Semiconductor

CY7C025-25AXC

Cypress Semiconductor

CY7C025-25AXC by Cypress Semiconductor is an 8Kx16 SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and is ideal for applications requiring fast and reliable memory storage in commercial-grade electronic devices.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

250 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CY7C025-25AXI by Cypress Semiconductor

CY7C025-25AXI

Cypress Semiconductor

CY7C025-25AXI by Cypress Semiconductor is an 8Kx16 SRAM with 25ns access time, operating at 5V. It features a low profile flatpack package and is ideal for industrial applications requiring fast and reliable memory storage.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX16

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

5

Not Qualified

1.6 mm

.015 Amp

4.5 V

SRAMs

290 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CY7C1329H-166AXC by Cypress Semiconductor

CY7C1329H-166AXC

Cypress Semiconductor

CY7C1329H-166AXC by Cypress Semiconductor is a 64KX32 CACHE SRAM with 3.3V supply, operating at 166 MHz clock frequency. It features a low profile FLATPACK package and offers fast access time of 3.5 ns. Ideal for applications requiring high-speed synchronous memory in commercial-grade temperature environments.

3.5 ns

PIPELINED ARCHITECTURE

166 MHz

COMMON

R-PQFP-G100

e3

20 mm

2097152 bit

CACHE SRAM

32

3

1

100

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX32

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.04 Amp

3.14 V

SRAMs

240 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C1480V33-200AXC by Cypress Semiconductor

CY7C1480V33-200AXC

Cypress Semiconductor

CY7C1480V33-200AXC by Cypress is a 3.3V SRAM with 2MX36 organization, operating at 200MHz. It features synchronous operation, 100 terminals in a flatpack package, and is ideal for CACHE SRAM applications requiring fast access times up to 3ns.

3 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

75497472 bit

CACHE SRAM

36

3

1

100

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C1440AV33-167AXC by Cypress Semiconductor

CY7C1440AV33-167AXC

Cypress Semiconductor

CY7C1440AV33-167AXC by Cypress Semiconductor is a 1MX36 CACHE SRAM with 3.3V supply, 167 MHz clock frequency, and 3.4 ns access time. It is used in applications requiring fast synchronous memory operations at commercial temperature grades.

3.4 ns

PIPELINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

e4

20 mm

37748736 bit

CACHE SRAM

36

3

1

100

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

375 mA

3.6 V

3.135 V

3.3

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

QUAD

40

14 mm

IS61LPS25636A-200TQLI by Integrated Silicon Solution

IS61LPS25636A-200TQLI

Integrated Silicon Solution

IS61LPS25636A-200TQLI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3.3V nominal voltage, operating at up to 200MHz clock frequency. Ideal for industrial applications requiring fast access time of 3.1ns and low standby current of 0.105Amp.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

9437184 bit

CACHE SRAM

36

1

100

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.105 Amp

3.14 V

SRAMs

275 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10

14 mm

CY7C09089V-12AXC by Cypress Semiconductor

CY7C09089V-12AXC

Cypress Semiconductor

CY7C09089V-12AXC by Cypress is a 64KX8 SRAM with 50 MHz clock frequency, 25 ns access time, and 3.3 V supply voltage. Ideal for applications requiring fast synchronous memory operations in commercial-grade devices.

25 ns

FLOW-THROUGH OR PIPELINED ARCHITECTURE

50 MHz

COMMON

S-PQFP-G100

e3

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.6 mm

.00025 Amp

3.14 V

SRAMs

205 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CY7C1440AV33-250AXI by Cypress Semiconductor

CY7C1440AV33-250AXI

Cypress Semiconductor

CY7C1440AV33-250AXI by Cypress is a 1MX36 CACHE SRAM with 3.3V supply, 250MHz clock frequency, and 2.6ns access time. Ideal for industrial applications requiring high-speed synchronous memory with low power consumption.

2.6 ns

PIPELINED ARCHITECTURE

250 MHz

COMMON

R-PQFP-G100

e3

20 mm

37748736 bit

CACHE SRAM

36

3

1

100

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX36

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

3.14 V

SRAMs

475 mA

3.6 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

40

14 mm

CY7C008V-25AXC by Cypress Semiconductor

CY7C008V-25AXC

Cypress Semiconductor

CY7C008V-25AXC by Cypress Semiconductor is a 64KX8 SRAM with 3.3V supply, operating at 0-70 °C. It features 25 ns access time, 0.5 mm terminal pitch, and GULL WING terminals. Ideal for applications requiring fast and reliable memory storage in commercial-grade devices.

25 ns

COMMON

S-PQFP-G100

e3

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

260

3.3

Not Qualified

1.6 mm

.00005 Amp

3 V

SRAMs

165 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.5 mm

QUAD

40

14 mm

CYDM128B16-55BVXI by Cypress Semiconductor

CYDM128B16-55BVXI

Cypress Semiconductor

CYDM128B16-55BVXI by Cypress Semiconductor is a 8KX16 MULTI-PORT SRAM with 55 ns access time, operating at 1.8/3 V. It features a very thin profile GRID ARRAY package suitable for industrial applications. This CMOS technology memory device has 100 terminals in a square shape, making it ideal for high-speed parallel operations.

55 ns

ALSO OPERATES AT 2.5V AND 3V SUPPLY

COMMON

S-PBGA-B100

e1

6 mm

131072 bit

MULTI-PORT SRAM

16

3

1

2

100

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA100,10X10,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8/3

Not Qualified

1 mm

.000006 Amp

1.7 V

SRAMs

60 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

20

6 mm

7008L20PFI by Integrated Device Technology

7008L20PFI

Integrated Device Technology

7008L20PFI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 20ns access time, operating at 5V. It features a low profile FLATPACK package with 0.5mm terminal pitch, suitable for industrial applications requiring fast and reliable parallel memory storage. With 3-STATE output characteristics and common I/O type, it offers high performance in an asynchronous mode.

20 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.01 Amp

4.5 V

SRAMs

335 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

7008S55PFI by Integrated Device Technology

7008S55PFI

Integrated Device Technology

7008S55PFI by Integrated Device Technology is a 64Kx8 MULTI-PORT SRAM with 55 ns access time, operating at 5V. It features a low profile flatpack package style and operates in industrial temperature range. Ideal for applications requiring fast and reliable data storage in harsh environments.

55 ns

COMMON

S-PQFP-G100

e0

14 mm

524288 bit

MULTI-PORT SRAM

8

3

1

2

100

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

SQUARE

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

240

5

Not Qualified

1.6 mm

.03 Amp

4.5 V

SRAMs

310 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

QUAD

20

14 mm

IS61LPS25618A-200TQLI by Integrated Silicon Solution

IS61LPS25618A-200TQLI

Integrated Silicon Solution

IS61LPS25618A-200TQLI by Integrated Silicon Solution is a 256KX18 CACHE SRAM with a max clock frequency of 200 MHz. It operates in synchronous mode and has a min standby voltage of 3.14 V. This memory IC is commonly used in industrial applications requiring high-speed data storage and retrieval.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PQFP-G100

e3

20 mm

4718592 bit

CACHE SRAM

18

1

100

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

3-STATE

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.6 mm

.000075 Amp

3.14 V

SRAMs

210 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

QUAD

10

14 mm

CY7C1370KV33-167AXIT by Infineon Technologies

CY7C1370KV33-167AXIT

Infineon Technologies

ZBT SRAM; No. of Terminals: 100; Package Code: LQFP; Package Shape: RECTANGULAR; Maximum Access Time: 3.4 ns; Length: 20 mm;

3.4 ns

PIPELINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

20 mm

18874368 bit

ZBT SRAM

36

3

1

1

100

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

3-STATE

YES

PLASTIC/EPOXY

LQFP

QFP100,.7X.9,32

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

1.6 mm

.065 Amp

3.135 V

163 mA

3.6 V

3.135 V

3.3

YES

CMOS

GULL WING

.65 mm

QUAD

14 mm

CY7C1380KV33-167AXIT by Infineon Technologies

CY7C1380KV33-167AXIT

Infineon Technologies

STANDARD SRAM; No. of Terminals: 100; Package Code: LQFP; Package Shape: RECTANGULAR; Technology: CMOS; Length: 20 mm;

3.4 ns

PIPE LINED ARCHITECTURE

167 MHz

COMMON

R-PQFP-G100

20 mm

18874368 bit

STANDARD SRAM

36

3

1

100

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX36

YES

PLASTIC/EPOXY

LQFP

QFP100,.63X.87

RECTANGULAR

FLATPACK, LOW PROFILE

PARALLEL

1.6 mm

.08 Amp

3.135 V

163 mA

3.63 V

3.135 V

3.3

YES

CMOS

GULL WING

.65 mm

QUAD

14 mm

70261S55PFI8 by Renesas Electronics

70261S55PFI8

Renesas Electronics

MULTI-PORT SRAM; No. of Terminals: 100; Package Code: LFQFP; Package Shape: RECTANGULAR; Maximum Standby Current: .015 Amp; Technology: CMOS;

55 ns

COMMON

S-PQFP-G100

14 mm

262144 bit

MULTI-PORT SRAM

16

1

2

100

16384 words

16K

ASYNCHRONOUS

85 Cel

-40 Cel

16KX16

3-STATE

YES

PLASTIC/EPOXY

LFQFP

QFP100,.63SQ,20

RECTANGULAR

FLATPACK, LOW PROFILE, FINE PITCH

PARALLEL

1.6 mm

.015 Amp

4.5 V

270 mA

5.5 V

4.5 V

5

YES

CMOS

GULL WING

.5 mm

QUAD

14 mm