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APPLICATION SPECIFIC SRAM SRAM 5

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-10BLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-10BLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 3V. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast access time of 10ns and low standby current consumption of 0.006A.

10 ns

COMMON

R-PBGA-B48

e3

8 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

35 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM

6 mm

IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-8BLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-8BLI-TR by Integrated Silicon Solution is a 256Kx16 SRAM with 8 ns access time, operating at 3.6V max voltage. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring fast, common I/O type memory with low standby current of 0.006 Amp.

8 ns

COMMON

R-PBGA-B48

e3

8 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM

6 mm

IS61WV25616EDBLL-8BLI by Integrated Silicon Solution

IS61WV25616EDBLL-8BLI

Integrated Silicon Solution

IS61WV25616EDBLL-8BLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous operation, common I/O type, and 8ns max access time. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

8 ns

COMMON

R-PBGA-B48

e3

8 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.75 mm

BOTTOM

6 mm

IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution

IS61WV25616EDBLL-8TLI-TR

Integrated Silicon Solution

IS61WV25616EDBLL-8TLI-TR by Integrated Silicon Solution is a 256KX16 SRAM with 3-STATE output, operating at 2.5/3.3V. Ideal for industrial applications, it offers fast access time of 8ns and low standby current of 0.006Amp. With a compact design and common I/O type, this CMOS technology-based memory IC is suitable for various parallel data processing tasks.

8 ns

COMMON

R-PDSO-G44

e3

18.41 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.6 V

2.4 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

IS61WV25616EDBLL-8TLI by Integrated Silicon Solution

IS61WV25616EDBLL-8TLI

Integrated Silicon Solution

IS61WV25616EDBLL-8TLI by Integrated Silicon Solution is a 256Kx16 SRAM with 3.3V nominal voltage, operating in industrial temperature range. It features asynchronous mode, common I/O type, and 8ns access time. Ideal for applications requiring fast and reliable memory storage in compact form factor.

8 ns

COMMON

R-PDSO-G44

e3

18.41 mm

4194304 bit

APPLICATION SPECIFIC SRAM

16

1

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

2.5/3.3

Not Qualified

1.2 mm

.006 Amp

2 V

SRAMs

45 mA

3.63 V

2.97 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm