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32 OTP ROM 109

OTP ROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Reverse Pinout Screening Level Maximum Seated Height Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width Write Protection
AT27C040-15RC by Atmel

AT27C040-15RC

Atmel

AT27C040-15RC by Atmel is a 512KX8 OTP ROM with 150 ns access time, operating at 5V. It features a 3-STATE output and GULL WING terminal form. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

150 ns

COMMON

R-PDSO-G32

e0

20.75 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP32,.56

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

2.77 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

11.2 mm

AT27C040-70JI by Atmel

AT27C040-70JI

Atmel

AT27C040-70JI by Atmel is a 512Kx8 OTP ROM with 70 ns access time. Operating at 5V, it features 3-STATE output and asynchronous mode. Widely used in industrial applications for storing up to 524288 words of data efficiently.

70 ns

COMMON

R-PQCC-J32

e0

13.97 mm

4194304 bit

OTP ROM

8

2

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

Not Qualified

3.556 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

11.43 mm

AT27LV040A-90JI by Atmel

AT27LV040A-90JI

Atmel

AT27LV040A-90JI by Atmel is a 512Kx8 OTP ROM chip with 3.3V nominal voltage, operating in asynchronous mode with 90ns access time. It features 32 terminals in a rectangular chip carrier package and is ideal for industrial applications requiring reliable non-volatile memory storage.

90 ns

ALSO OPERATES AT 5V SUPPLY

COMMON

R-PQCC-J32

e0

13.97 mm

4194304 bit

OTP ROM

8

2

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

3.3/5

Not Qualified

3.556 mm

.00002 Amp

OTP ROMs

30 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

11.43 mm

M27C4001-10B1 by STMicroelectronics

M27C4001-10B1

STMicroelectronics

M27C4001-10B1 by STMicroelectronics is a 512Kx8 OTP ROM with 100ns access time, operating at 5V. It features a 3-STATE output and operates in parallel mode. Commonly used in commercial applications requiring non-volatile memory storage.

100 ns

COMMON

R-PDIP-T32

e3

42.035 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-12B1 by STMicroelectronics

M27C4001-12B1

STMicroelectronics

M27C4001-12B1 by STMicroelectronics is a 512KX8 OTP ROM with 100ns access time, operating at 5V. It features a 32-terminal IN-LINE package and supports asynchronous operation. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

100 ns

COMMON

R-PDIP-T32

e3

42.035 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-80B1 by STMicroelectronics

M27C4001-80B1

STMicroelectronics

M27C4001-80B1 by STMicroelectronics is a 512KX8 OTP ROM with 80 ns access time, operating at 5V. It features 3-STATE output characteristics and has a memory density of 4Mbit. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

80 ns

COMMON

R-PDIP-T32

e3

42.035 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4001-80N6 by STMicroelectronics

M27C4001-80N6

STMicroelectronics

M27C4001-80N6 by STMicroelectronics is a 512KX8 OTP ROM with 80 ns access time, operating at 5V. It features a small outline package, GULL WING terminals, and industrial temperature grade. Ideal for applications requiring non-volatile memory storage in harsh environments.

80 ns

COMMON

R-PDSO-G32

e3/e6

18.4 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

1.2 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

8 mm

M27C256B-10C6TR by STMicroelectronics

M27C256B-10C6TR

STMicroelectronics

STMicroelectronics M27C256B-10C6TR is a 32KX8 OTP ROM with 3-STATE output, operating at 5V. It has an access time of 100ns and is ideal for industrial applications requiring non-volatile memory storage in a compact chip carrier package.

100 ns

12.75V PROGRAMMING VOLTAGE

COMMON

R-PQCC-J32

e3

13.97 mm

262144 bit

OTP ROM

8

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12.75

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C4001-10C1 by STMicroelectronics

M27C4001-10C1

STMicroelectronics

M27C4001-10C1 by STMicroelectronics is a 512Kx8 OTP ROM with 100ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Commonly used for memory storage applications due to its high memory density and parallel interface.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C4001-12C1 by STMicroelectronics

M27C4001-12C1

STMicroelectronics

M27C4001-12C1 by STMicroelectronics is a 512Kx8 OTP ROM chip with 100ns access time, operating at 5V. It features a 3-STATE output and supports asynchronous mode. Commonly used in commercial applications due to its parallel interface and 524288 words memory capacity.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C4001-15C1 by STMicroelectronics

M27C4001-15C1

STMicroelectronics

STMicroelectronics M27C4001-15C1 is a 512KX8 OTP ROM with 100ns access time, operating at 5V. It features 3-STATE output and operates in asynchronous mode. Commonly used for memory storage applications due to its high memory density and parallel interface.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C4001-55C1 by STMicroelectronics

M27C4001-55C1

STMicroelectronics

STMicroelectronics M27C4001-55C1 is a 512KX8 OTP ROM with 55 ns access time, operating at 5V. It features 3-STATE output and supports asynchronous mode. Commonly used in commercial applications due to its memory density of 4Mbit and parallel interface.

55 ns

COMMON

R-PQCC-J32

e3

13.97 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C4001-70C1 by STMicroelectronics

M27C4001-70C1

STMicroelectronics

M27C4001-70C1 by STMicroelectronics is a 512KX8 OTP ROM chip with 70 ns access time and operates at 5V. It features a 3-STATE output, CMOS technology, and parallel interface. Commonly used in commercial applications requiring non-volatile memory storage.

70 ns

COMMON

R-PQCC-J32

e3

13.97 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C4001-70C6 by STMicroelectronics

M27C4001-70C6

STMicroelectronics

OTP ROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: QCCJ; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

70 ns

COMMON

R-PQCC-J32

e3

13.97 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C4001-90C1 by STMicroelectronics

M27C4001-90C1

STMicroelectronics

STMicroelectronics M27C4001-90C1 is a 512Kx8 OTP ROM with 90 ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

90 ns

COMMON

R-PQCC-J32

e3

13.97 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C4001-90C6 by STMicroelectronics

M27C4001-90C6

STMicroelectronics

STMicroelectronics M27C4001-90C6 is a 512Kx8 OTP ROM with 90ns access time, operating at 5V. It features 3-STATE output and operates in industrial temperature range. Commonly used for parallel memory applications due to its CMOS technology and 524288 words capacity.

90 ns

COMMON

R-PQCC-J32

e3

13.97 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W101-80K6TR by STMicroelectronics

M27W101-80K6TR

STMicroelectronics

STMicroelectronics M27W101-80K6TR is an OTP ROM with 128KX8 organization, 131072 words, and 1048576 bit memory density. It operates in asynchronous mode with a max access time of 80 ns. Commonly used in industrial applications due to its CMOS technology and 3-STATE output characteristics.

80 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.56 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C801-100B1 by STMicroelectronics

M27C801-100B1

STMicroelectronics

STMicroelectronics' M27C801-100B1 is a 1MX8 OTP ROM with 1048576 words and 8388608 bit memory density. Operating at 5V, it has an access time of 100ns and consumes a max of 35mA. Commonly used in commercial applications, this CMOS technology-based device features a rectangular package shape with through-hole terminals.

100 ns

COMMON

R-PDIP-T32

e3

42.035 mm

8388608 bit

OTP ROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C801-120B1 by STMicroelectronics

M27C801-120B1

STMicroelectronics

STMicroelectronics' M27C801-120B1 is a 1MX8 OTP ROM with 120 ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring reliable non-volatile memory storage in a rectangular plastic package.

120 ns

COMMON

R-PDIP-T32

e3

42.035 mm

8388608 bit

OTP ROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C801-100N1 by STMicroelectronics

M27C801-100N1

STMicroelectronics

STMicroelectronics M27C801-100N1 is a 1MX8 OTP ROM with 1048576 words, 100 ns access time, and 8388608 bit memory density. It operates at 5V, in commercial temperature grade, suitable for applications requiring fast non-volatile memory storage.

100 ns

COMMON

R-PDSO-G32

e3/e6

18.4 mm

8388608 bit

OTP ROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

5

Not Qualified

1.2 mm

.0001 Amp

OTP ROMs

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

8 mm

M27C801-100K1 by STMicroelectronics

M27C801-100K1

STMicroelectronics

STMicroelectronics M27C801-100K1 is a 1MX8 OTP ROM with 1048576 words and 8388608 bit memory density. Operating at 5V, it has a max access time of 100ns and consumes up to 35mA. Commonly used in commercial applications requiring fast, non-volatile memory storage.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

8388608 bit

OTP ROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-10B1 by STMicroelectronics

M27C1001-10B1

STMicroelectronics

M27C1001-10B1 by STMicroelectronics is a 128Kx8 OTP ROM with 100ns access time. Operating at 5V, it features a 32-terminal IN-LINE package and CMOS technology. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

100 ns

COMMON

R-PDIP-T32

e3

42.035 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C1001-12B1 by STMicroelectronics

M27C1001-12B1

STMicroelectronics

M27C1001-12B1 by STMicroelectronics is a 128KX8 OTP ROM with 120 ns access time, operating at 5V. It features a 32-terminal IN-LINE package and supports asynchronous mode. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

120 ns

COMMON

R-PDIP-T32

e3

42.035 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C1001-15B1 by STMicroelectronics

M27C1001-15B1

STMicroelectronics

STMicroelectronics M27C1001-15B1 is a 128KX8 OTP ROM with 150ns access time, operating at 5V. It has 32 terminals in an IN-LINE package and supports asynchronous mode. Commonly used for memory storage applications due to its 1048576-bit density and 131072-word capacity.

150 ns

COMMON

R-PDIP-T32

e3

42.035 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C1001-45XB1 by STMicroelectronics

M27C1001-45XB1

STMicroelectronics

STMicroelectronics M27C1001-45XB1 is a 128KX8 OTP ROM with 3-STATE output, operating at 5V. It has a max access time of 45ns and memory density of 1048576 bit. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

45 ns

COMMON

R-PDIP-T32

e3

42.035 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C1001-70B1 by STMicroelectronics

M27C1001-70B1

STMicroelectronics

M27C1001-70B1 by STMicroelectronics is a 128KX8 OTP ROM with 70 ns access time and 5V supply voltage. It features a 32-terminal IN-LINE package, suitable for applications requiring non-volatile memory storage in commercial temperature environments. With a memory density of 1048576 bit and parallel interface, it offers reliable data storage solutions.

70 ns

COMMON

R-PDIP-T32

e3

42.035 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

4.83 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C1001-10C1 by STMicroelectronics

M27C1001-10C1

STMicroelectronics

M27C1001-10C1 by STMicroelectronics is a 128KX8 OTP ROM chip with 3-STATE output, operating at 5V. It has a max access time of 100ns and consumes up to 30mA. Commonly used in commercial applications requiring non-volatile memory storage with parallel interface.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-10C6 by STMicroelectronics

M27C1001-10C6

STMicroelectronics

M27C1001-10C6 by STMicroelectronics is a 128KX8 OTP ROM chip with 100ns access time, operating at 5V. It features a 32-terminal chip carrier package and supports asynchronous operation. Ideal for industrial applications requiring non-volatile memory storage in a compact form factor.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-12C1TR by STMicroelectronics

M27C1001-12C1TR

STMicroelectronics

STMicroelectronics M27C1001-12C1TR is a 128KX8 OTP ROM with 120ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for commercial applications requiring fast and reliable non-volatile memory storage.

120 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-12C1 by STMicroelectronics

M27C1001-12C1

STMicroelectronics

M27C1001-12C1 by STMicroelectronics is a 128KX8 OTP ROM chip with 120 ns access time, operating at 5V. It features a 3-STATE output and operates in asynchronous mode. Commonly used in commercial applications requiring non-volatile memory storage.

120 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-12C6 by STMicroelectronics

M27C1001-12C6

STMicroelectronics

STMicroelectronics M27C1001-12C6 is a 128Kx8 OTP ROM with 120ns access time, operating at 5V. It features 3-STATE output and CMOS technology, suitable for industrial applications requiring non-volatile memory storage in a compact chip carrier package.

120 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-15C1 by STMicroelectronics

M27C1001-15C1

STMicroelectronics

M27C1001-15C1 by STMicroelectronics is a 128KX8 OTP ROM with a memory density of 1048576 bit. It operates asynchronously and has a max access time of 150 ns. This chip is commonly used in applications that require non-volatile memory storage.

150 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-15C6TR by STMicroelectronics

M27C1001-15C6TR

STMicroelectronics

STMicroelectronics M27C1001-15C6TR is a 128KX8 OTP ROM with 150ns access time, operating at 5V. It features 3-STATE output and CMOS technology, suitable for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

150 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-45XC1 by STMicroelectronics

M27C1001-45XC1

STMicroelectronics

STMicroelectronics M27C1001-45XC1 is a 128Kx8 OTP ROM with 45ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

45 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-70C1 by STMicroelectronics

M27C1001-70C1

STMicroelectronics

M27C1001-70C1 by STMicroelectronics is a 128KX8 OTP ROM with a max operating temperature of 70°C. It has a memory density of 1048576 bit and operates in parallel mode. This chip is commonly used for applications requiring non-volatile memory storage.

70 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-70C6 by STMicroelectronics

M27C1001-70C6

STMicroelectronics

M27C1001-70C6 by STMicroelectronics is a 128KX8 OTP ROM chip with 70 ns access time, operating at 5V. It features a 32-terminal chip carrier package and supports asynchronous operation. Ideal for industrial applications requiring non-volatile memory storage in a compact form factor.

70 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-90C1 by STMicroelectronics

M27C1001-90C1

STMicroelectronics

STMicroelectronics M27C1001-90C1 is a 128KX8 OTP ROM with 90 ns access time, operating at 5V. It features 3-STATE output, parallel interface, and common I/O type. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

90 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W201-80K6 by STMicroelectronics

M27W201-80K6

STMicroelectronics

STMicroelectronics M27W201-80K6 is an OTP ROM chip with 256Kx8 organization, 80 ns access time, and 3.56 mm seated height. It operates in industrial temperature range and has a memory density of 2097152 bit. Ideal for applications requiring non-volatile memory storage in harsh environments.

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PQCC-J32

e3

13.97 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.56 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W512-100K6TR by STMicroelectronics

M27W512-100K6TR

STMicroelectronics

M27W512-100K6TR by STMicroelectronics is a 64KX8 OTP ROM chip with 3-STATE output, operating at 3V. It features a max access time of 100ns and is ideal for industrial applications requiring non-volatile memory storage in a compact rectangular chip carrier package.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.556 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W512-100K6 by STMicroelectronics

M27W512-100K6

STMicroelectronics

STMicroelectronics M27W512-100K6 is a 64KX8 OTP ROM chip with 3-STATE output, operating at -40 to 85 °C. It has a supply voltage of 2.7-3.6V and max access time of 100ns. Ideal for industrial applications requiring non-volatile memory storage in compact form factor.

100 ns

COMMON

R-PQCC-J32

e3

13.97 mm

524288 bit

OTP ROM

8

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.556 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C1001-35C6 by STMicroelectronics

M27C1001-35C6

STMicroelectronics

STMicroelectronics M27C1001-35C6 is a 128Kx8 OTP ROM with 35 ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

35 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

Not Qualified

3.56 mm

.0001 Amp

OTP ROMs

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27C2001-10B1 by STMicroelectronics

M27C2001-10B1

STMicroelectronics

M27C2001-10B1 by STMicroelectronics is a 256KX8 OTP ROM with 3-STATE output, operating at 5V. It features a max access time of 100ns and memory density of 2097152 bits. Commonly used in applications requiring non-volatile memory storage with parallel interface.

100 ns

COMMON

R-PDIP-T32

e3

41.91 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.08 mm

.0001 Amp

OTP ROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27W101-80K6 by STMicroelectronics

M27W101-80K6

STMicroelectronics

STMicroelectronics M27W101-80K6 is a 128KX8 OTP ROM with 131072 words, operating at 3V. It features an access time of 80ns, industrial temperature grade, and CMOS technology. Commonly used in applications requiring non-volatile memory storage with a parallel interface.

80 ns

COMMON

R-PQCC-J32

e3

13.97 mm

1048576 bit

OTP ROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.56 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W201-80B6 by STMicroelectronics

M27W201-80B6

STMicroelectronics

STMicroelectronics M27W201-80B6 is a 256Kx8 OTP ROM with 80ns access time, operating at 3V. It features a 32-terminal IN-LINE package suitable for industrial applications. The memory density is 2097152 bit, making it ideal for storing large amounts of data efficiently.

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PDIP-T32

e3

42.035 mm

2097152 bit

OTP ROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3/3.3

Not Qualified

4.83 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27W801-100K6 by STMicroelectronics

M27W801-100K6

STMicroelectronics

M27W801-100K6 by STMicroelectronics is a 1MX8 OTP ROM with 1048576 words memory width and 8388608 bit memory density. Operating at 3V, it has a max access time of 100ns and is ideal for industrial applications requiring reliable non-volatile memory storage.

100 ns

ACCESS TIME 80 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PQCC-J32

e3

13.97 mm

8388608 bit

OTP ROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

Not Qualified

3.56 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

M27W801-100N6 by STMicroelectronics

M27W801-100N6

STMicroelectronics

M27W801-100N6 by STMicroelectronics is a 1MX8 OTP ROM with 1048576 words, 8388608 bit memory density, and 100 ns max access time. It operates in industrial temperature grade and has a parallel interface. This device is suitable for applications requiring non-volatile memory storage in compact electronic systems.

100 ns

ACCESS TIME 80 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PDSO-G32

e0

18.4 mm

8388608 bit

OTP ROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3/3.3

Not Qualified

1.2 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

8 mm

M27W401-80B6 by STMicroelectronics

M27W401-80B6

STMicroelectronics

M27W401-80B6 by STMicroelectronics is a 512Kx8 OTP ROM with 80ns access time. It operates at 3V, has a temperature range of -40 to 85 °C, and consumes up to 15mA. Commonly used in industrial applications requiring non-volatile memory storage.

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PDIP-T32

e3

41.91 mm

4194304 bit

OTP ROM

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

3/3.3

Not Qualified

5.08 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27W401-80K6 by STMicroelectronics

M27W401-80K6

STMicroelectronics

M27W401-80K6 by STMicroelectronics is a 512Kx8 OTP ROM chip with 80ns access time, operating at 3V. It features a CMOS technology, 32 terminals in a rectangular chip carrier package suitable for industrial applications. With common I/O type and 3-state output characteristics, it offers reliable non-volatile memory storage solutions.

80 ns

ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V

COMMON

R-PQCC-J32

e3

13.97 mm

4194304 bit

OTP ROM

8

3

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

260

3/3.3

Not Qualified

3.56 mm

.000015 Amp

OTP ROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

10

11.43 mm