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SQUARE MRAMs 35

MRAMs
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Minimum Data Retention Time Endurance JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Screening Level Maximum Seated Height Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width Maximum Write Cycle Time (tWC)
MR4A16BCMA35R by Everspin Technologies

MR4A16BCMA35R

Everspin Technologies

Everspin Technologies' MR4A16BCMA35R is a 1MX16 MRAM with 3.3V supply, 35ns access time, and 1M words code. It is used in industrial applications requiring fast, non-volatile memory with low power consumption and high reliability.

35 ns

20

S-PBGA-B48

10 mm

16777216 bit

MRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.009 Amp

3 V

SRAMs

180 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

10 mm

.000035 ms

MR5A16ACMA35R by Everspin Technologies

MR5A16ACMA35R

Everspin Technologies

MR5A16ACMA35R by Everspin Technologies is a 2MX16 MRAM with 3.3V supply, 35ns access time, and 33554432-bit memory density. It is ideal for applications requiring fast, non-volatile memory solutions in a compact grid array package with low profile design.

35 ns

20

S-PBGA-B48

10 mm

33554432 bit

MRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.35 mm

.018 Amp

3 V

180 mA

3.6 V

3 V

3.3

YES

CMOS

BALL

.75 mm

BOTTOM

10 mm

.000035 ms

MR5A16AUMA45R by Everspin Technologies

MR5A16AUMA45R

Everspin Technologies

Everspin Technologies' MR5A16AUMA45R is a 2MX16 MRAM with 3V supply voltage, operating at -40 to 125 °C. It features a low profile grid array package, 0.75mm terminal pitch, and 45ns access time. Ideal for applications requiring fast, non-volatile memory with high endurance and reliability.

45 ns

20

S-PBGA-B48

10 mm

33554432 bit

MRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

125 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.35 mm

.018 Amp

3 V

180 mA

3.6 V

3 V

3.3

YES

CMOS

BALL

.75 mm

BOTTOM

10 mm

.000045 ms

M3032316045NX0IBCY by Renesas Electronics

M3032316045NX0IBCY

Renesas Electronics

Renesas Electronics M3032316045NX0IBCY is a 2MX16 MRAM with 16-bit memory width and 33554432 bit density. Operating at -40 to 85 °C, it offers fast access time of 45 ns for parallel applications. With low standby current and high endurance of 100000000000000 cycles, it's ideal for industrial control systems.

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

33554432 bit

MRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.007 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3032316045NX0IBCR by Renesas Electronics

M3032316045NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH; Package Body Material: PLASTIC/EPOXY;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

33554432 bit

MRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.007 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3032316035NX0IBCY by Renesas Electronics

M3032316035NX0IBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Moisture Sensitivity Level (MSL): 3; Memory Width: 16;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

33554432 bit

MRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.007 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3032316045NX0PBCR by Renesas Electronics

M3032316045NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 3.6 V; Parallel or Serial: PARALLEL;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

33554432 bit

MRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

105 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.007 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3032316045NX0PBCY by Renesas Electronics

M3032316045NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Minimum Data Retention Time: 10; Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

33554432 bit

MRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

105 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.007 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316035NX0PBCR by Renesas Electronics

M3004316035NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Memory Density: 4194304 bit; Maximum Operating Temperature: 105 Cel;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316045NX0IBCY by Renesas Electronics

M3004316045NX0IBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Organization: 256KX16; Minimum Data Retention Time: 10;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316035NX0IBCY by Renesas Electronics

M3008316035NX0IBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Organization: 512KX16; Endurance: 100000000000000 Write/Erase Cycles;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316035NX0PBCY by Renesas Electronics

M3008316035NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; JESD-609 Code: e1; Terminal Finish: TIN SILVER COPPER;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

105 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316035NX0IBCY by Renesas Electronics

M3016316035NX0IBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Technology: CMOS; No. of Functions: 1;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

16777216 bit

MRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316035NX0PBCY by Renesas Electronics

M3016316035NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Memory Density: 16777216 bit; Surface Mount: YES;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

16777216 bit

MRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

105 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316045NX0IBCY by Renesas Electronics

M3016316045NX0IBCY

Renesas Electronics

Renesas Electronics M3016316045NX0IBCY is a 1MX16 MRAM with 3V supply, 45ns access time, and 100T write/erase cycles. Ideal for applications requiring high-speed non-volatile memory like automotive systems, industrial automation, and IoT devices.

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

16777216 bit

MRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316045NX0PBCR by Renesas Electronics

M3016316045NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel; No. of Words Code: 1M;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

16777216 bit

MRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

105 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3032316035NX0PBCY by Renesas Electronics

M3032316035NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Moisture Sensitivity Level (MSL): 3; Technology: CMOS;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

33554432 bit

MRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

105 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.007 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316045NX0IBCY by Renesas Electronics

M3008316045NX0IBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 2.7 V; Memory Density: 8388608 bit;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316045NX0PBCR by Renesas Electronics

M3008316045NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; No. of Functions: 1; Width: 10 mm;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

105 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316035NX0IBCR by Renesas Electronics

M3016316035NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Parallel or Serial: PARALLEL; Nominal Supply Voltage / Vsup (V): 3;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

16777216 bit

MRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316045NX0PBCY by Renesas Electronics

M3016316045NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; No. of Functions: 1; Endurance: 100000000000000 Write/Erase Cycles;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

16777216 bit

MRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

105 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3032316035NX0IBCR by Renesas Electronics

M3032316035NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Moisture Sensitivity Level (MSL): 3; Minimum Supply Voltage (Vsup): 2.7 V;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

33554432 bit

MRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.007 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3032316035NX0PBCR by Renesas Electronics

M3032316035NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 3.6 V; Terminal Finish: TIN SILVER COPPER;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

33554432 bit

MRAM

16

3

1

48

2097152 words

2M

ASYNCHRONOUS

105 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.007 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316035NX0IBCR by Renesas Electronics

M3004316035NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 3.6 V; Package Equivalence Code: BGA48,6X8,30;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316045NX0PBCY by Renesas Electronics

M3004316045NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 2.7 V; No. of Words Code: 256K;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316045NX0PBCR by Renesas Electronics

M3004316045NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Terminal Form: BALL; No. of Words Code: 256K;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316035NX0IBCR by Renesas Electronics

M3008316035NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Terminal Form: BALL; Maximum Operating Temperature: 85 Cel;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316035NX0PBCR by Renesas Electronics

M3008316035NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Operating Mode: ASYNCHRONOUS; Minimum Data Retention Time: 10;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

105 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316045NX0IBCR by Renesas Electronics

M3008316045NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Maximum Standby Current: .0035 Amp; Operating Mode: ASYNCHRONOUS;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3008316045NX0PBCY by Renesas Electronics

M3008316045NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Endurance: 100000000000000 Write/Erase Cycles; Width: 10 mm;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

8388608 bit

MRAM

16

3

1

48

524288 words

512K

ASYNCHRONOUS

105 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316035NX0PBCR by Renesas Electronics

M3016316035NX0PBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Length: 10 mm; Minimum Standby Voltage: 2.7 V;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

16777216 bit

MRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

105 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316035NX0IBCY by Renesas Electronics

M3004316035NX0IBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 3.6 V; Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316035NX0PBCY by Renesas Electronics

M3004316035NX0PBCY

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Technology: CMOS; Endurance: 100000000000000 Write/Erase Cycles;

35 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

105 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3004316045NX0IBCR by Renesas Electronics

M3004316045NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; No. of Words Code: 256K; Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

4194304 bit

MRAM

16

3

1

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm

M3016316045NX0IBCR by Renesas Electronics

M3016316045NX0IBCR

Renesas Electronics

MRAM; No. of Terminals: 48; Package Code: LFBGA; Package Shape: SQUARE; Terminal Position: BOTTOM; Terminal Finish: TIN SILVER COPPER;

45 ns

10

100000000000000 Write/Erase Cycles

S-PBGA-B48

e1

10 mm

16777216 bit

MRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

1.35 mm

.0035 Amp

2.7 V

30 mA

3.6 V

2.7 V

3

YES

CMOS

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10 mm