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INDUSTRIAL EPROM 13

EPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Screening Level Maximum Seated Height Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
M27C256B-12F6 by STMicroelectronics

M27C256B-12F6

STMicroelectronics

M27C256B-12F6 by STMicroelectronics is a 32KX8 EPROM with 3-STATE output, operating at 5V. It has a programming voltage of 12.75V and max access time of 120ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

120 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.75

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C256B-90F6 by STMicroelectronics

M27C256B-90F6

STMicroelectronics

M27C256B-90F6 by STMicroelectronics is a 32KX8 EPROM with 3-STATE output, operating at 5V. It features a max access time of 90ns and is ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

90 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.75

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M87C257-15F6 by STMicroelectronics

M87C257-15F6

STMicroelectronics

M87C257-15F6 EPROM by STMicroelectronics features 32KX8 organization, 3-STATE output, and 150 ns access time. Ideal for industrial applications requiring a memory density of 262144 bit in a CMOS technology with parallel interface.

150 ns

COMMON

R-CDIP-T28

e3

36.92 mm

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

CY27C256-150WI by Cypress Semiconductor

CY27C256-150WI

Cypress Semiconductor

CY27C256-150WI by Cypress Semiconductor is a 32KX8 EPROM with 262144-bit memory density. It operates at 5V, has a max access time of 150ns, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in a ceramic, glass-sealed package.

150 ns

R-GDIP-T28

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

PARALLEL

Not Qualified

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

DUAL

M27C2001-10F6 by STMicroelectronics

M27C2001-10F6

STMicroelectronics

The STMicroelectronics M27C2001-10F6 is a 256KX8 EPROM with 100 ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and industrial temperature grade. Commonly used in applications requiring reliable non-volatile memory storage with a memory density of 2Mbit.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

2097152 bit

UVPROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C2001-12F6 by STMicroelectronics

M27C2001-12F6

STMicroelectronics

M27C2001-12F6 EPROM by STMicroelectronics features 256KX8 organization, 120 ns access time, and 5V nominal voltage. Ideal for industrial applications requiring reliable non-volatile memory with a memory density of 2097152 bits.

120 ns

COMMON

R-CDIP-T32

e3

41.885 mm

2097152 bit

UVPROM

8

1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C64A-20F6 by STMicroelectronics

M27C64A-20F6

STMicroelectronics

M27C64A-20F6 by STMicroelectronics is an 8KX8 EPROM with 65536 bit memory density, operating at 5V. It features a max access time of 200ns and is ideal for industrial applications requiring reliable non-volatile memory storage. The device has a parallel interface with 28 terminals in an in-line package style, suitable for various embedded systems.

200 ns

COMMON

R-CDIP-T28

e3

36.92 mm

65536 bit

UVPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

12.5

Not Qualified

5.97 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-10F6 by STMicroelectronics

M27C4002-10F6

STMicroelectronics

The STMicroelectronics M27C4002-10F6 EPROM features 256KX16 organization, 100 ns access time, and 3-STATE output characteristics. Ideal for industrial applications requiring a memory density of 4194304 bit with a parallel interface. Operating at temperatures from -40 to 85 °C, it offers reliable performance in various electronic systems.

100 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-15F6 by STMicroelectronics

M27C512-15F6

STMicroelectronics

M27C512-15F6 EPROM by STMicroelectronics features 64KX8 organization, 150 ns access time, and 524288 bit memory density. It is commonly used in industrial applications requiring reliable non-volatile memory storage with a parallel interface.

150 ns

COMMON

R-GDIP-T28

e0

36.92 mm

524288 bit

UVPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C512-90F6 by STMicroelectronics

M27C512-90F6

STMicroelectronics

STMicroelectronics M27C512-90F6 is a 64KX8 EPROM with 90 ns access time, operating at 5V. It features a 3-STATE output and is ideal for industrial applications requiring reliable non-volatile memory storage in a ceramic, glass-sealed package.

90 ns

COMMON

R-GDIP-T28

36.92 mm

524288 bit

UVPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

CERAMIC, GLASS-SEALED

WDIP

DIP28,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

NOT SPECIFIED

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

M27C4001-12F6 by STMicroelectronics

M27C4001-12F6

STMicroelectronics

M27C4001-12F6 EPROM by STMicroelectronics features 512KX8 organization, 100 ns access time, and 524288 words. It is ideal for industrial applications requiring a memory density of 4194304 bit with a parallel interface. The device operates at temperatures ranging from -40 to 85 °C and has a max supply voltage of 5.5 V.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

4194304 bit

UVPROM

8

1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C801-100F6 by STMicroelectronics

M27C801-100F6

STMicroelectronics

STMicroelectronics' M27C801-100F6 is a 1MX8 EPROM with 100ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and industrial temperature grade. Commonly used in applications requiring reliable non-volatile memory storage with parallel interface.

100 ns

COMMON

R-CDIP-T32

e3

41.885 mm

8388608 bit

UVPROM

8

1

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

35 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C1001-12F6 by STMicroelectronics

M27C1001-12F6

STMicroelectronics

M27C1001-12F6 by STMicroelectronics is a 128KX8 EPROM with 3-STATE output, operating at 5V. It features a max access time of 120ns and memory density of 1048576 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in a CMOS technology environment.

120 ns

COMMON

R-CDIP-T32

e3

41.885 mm

1048576 bit

UVPROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP32,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm