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SQUARE EEPROM 142

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
XC18V256PC20I by Xilinx

XC18V256PC20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Terminal Finish: Tin/Lead (Sn85Pb15);

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQCC-J20

e0

8.9662 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

20

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V256VQ44C by Xilinx

XC18V256VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Peak Reflow Temperature (C): 240;

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

44

32768 words

32K

SYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V256VQ44I by Xilinx

XC18V256VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; No. of Words Code: 32K;

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

262144 bit

CONFIGURATION MEMORY

8

3

1

44

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V512PC20C by Xilinx

XC18V512PC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Maximum Seated Height: 4.572 mm;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQCC-J20

e0

8.9662 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V512PC20I by Xilinx

XC18V512PC20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Memory Density: 524288 bit;

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQCC-J20

e0

8.9662 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V512VQ44C by Xilinx

XC18V512VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 3.6 V;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

44

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V512VQ44I by Xilinx

XC18V512VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Memory Width: 8;

15 ns

33 MHz

10

10000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

44

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC17V01PC20C by Xilinx

XC17V01PC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Length: 8.9662 mm;

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17V02PC20C by Xilinx

XC17V02PC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Input/Output Type: COMMON;

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

20

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17V02PC20I by Xilinx

XC17V02PC20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel;

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

20

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17V02VQ44C by Xilinx

XC17V02VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Output Characteristics: 3-STATE;

15 MHz

COMMON

S-PQFP-G44

e0

10 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

44

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX1

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V02VQ44I by Xilinx

XC17V02VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Maximum Clock Frequency (fCLK): 15 MHz;

15 MHz

COMMON

S-PQFP-G44

e0

10 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

44

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V04PC20C by Xilinx

XC17V04PC20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Peak Reflow Temperature (C): 225;

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

20

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17V04PC20I by Xilinx

XC17V04PC20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; JESD-609 Code: e0;

15 MHz

COMMON

S-PQCC-J20

e0

8.9662 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

20

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.572 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17V04PC44C by Xilinx

XC17V04PC44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Maximum Supply Current: 15 mA;

15 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

44

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V04PC44I by Xilinx

XC17V04PC44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Memory Width: 1;

15 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

44

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V04VQ44C by Xilinx

XC17V04VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; No. of Words Code: 4M;

15 MHz

COMMON

S-PQFP-G44

e0

10 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

44

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX1

3-STATE

PLASTIC/EPOXY

TQFP

QFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V04VQ44I by Xilinx

XC17V04VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Organization: 4MX1;

15 MHz

COMMON

S-PQFP-G44

e0

10 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

44

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

3-STATE

PLASTIC/EPOXY

TQFP

QFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V08PC44C by Xilinx

XC17V08PC44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Terminal Position: QUAD;

20 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

8388608 bit

CONFIGURATION MEMORY

8

3

1

44

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V08PC44I by Xilinx

XC17V08PC44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel;

20 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

8388608 bit

CONFIGURATION MEMORY

8

3

1

44

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V08VQ44C by Xilinx

XC17V08VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Terminal Pitch: .8 mm;

20 MHz

COMMON

S-PQFP-G44

e0

10 mm

8388608 bit

CONFIGURATION MEMORY

8

3

1

44

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V08VQ44I by Xilinx

XC17V08VQ44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Length: 10 mm;

20 MHz

COMMON

S-PQFP-G44

e0

10 mm

8388608 bit

CONFIGURATION MEMORY

8

3

1

44

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V16PC44C by Xilinx

XC17V16PC44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Terminal Position: QUAD;

20 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

16777216 bit

CONFIGURATION MEMORY

8

3

1

44

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V16PC44I by Xilinx

XC17V16PC44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Maximum Supply Current: 100 mA;

20 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

16777216 bit

CONFIGURATION MEMORY

8

3

1

44

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V16VQ44C by Xilinx

XC17V16VQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Terminal Pitch: .8 mm;

20 MHz

COMMON

S-PQFP-G44

e0

10 mm

16777216 bit

CONFIGURATION MEMORY

8

3

1

44

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17V16VQ44I by Xilinx

XC17V16VQ44I

Xilinx

The Xilinx XC17V16VQ44I is a 2MX8 EEPROM with 3.3V supply, operating at up to 20MHz clock frequency. It features a 44-terminal flatpack package suitable for industrial applications, offering 16777216-bit memory density and configurable as parallel or serial memory IC type.

20 MHz

COMMON

S-PQFP-G44

e0

10 mm

16777216 bit

CONFIGURATION MEMORY

8

3

1

44

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

10 mm

XC17S200AVQ44C by Xilinx

XC17S200AVQ44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Memory Density: 1335840 bit;

COMMON

S-PQFP-G44

e0

10 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

44

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

SERIAL

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

QUAD

10 mm

M24128S-FCU6T/T by STMicroelectronics

M24128S-FCU6T/T

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 4; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

1 MHz

S-PBGA-B4

.833 mm

131072 bit

EEPROM

8

1

4

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

.3 mm

I2C

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

NOT SPECIFIED

.833 mm

5 ms

25AA320A-I/MS by Microchip Technology

25AA320A-I/MS

Microchip Technology

25AA320A-I/MS by Microchip Technology is a SPI EEPROM with 4Kx8 organization, operating at up to 10MHz. It has a wide temperature range from -40°C to 85°C and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

OPERATES WITH 1.8V MIN @ 3 MHZ

10 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

32768 bit

EEPROM

8

1

1

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

2/5

5

Not Qualified

AEC-Q100

1.1 mm

SPI

.000005 Amp

EEPROMs

5 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE/SOFTWARE

M24C32S-FCU6T/T by STMicroelectronics

M24C32S-FCU6T/T

STMicroelectronics

M24C32S-FCU6T/T by STMicroelectronics is a 32Kb EEPROM with a 1.8V nominal voltage and operates in synchronous mode. It features a very thin profile, I2C serial bus, and supports temperatures from -40 °C to 85 °C. Ideal for industrial applications requiring compact memory solutions.

1 MHz

S-PBGA-B4

.833 mm

32768 bit

EEPROM

8

1

4

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

.3 mm

I2C

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

NOT SPECIFIED

.833 mm

5 ms

M24C64S-FCU6T/T by STMicroelectronics

M24C64S-FCU6T/T

STMicroelectronics

M24C64S-FCU6T/T by STMicroelectronics is a 64Kb EEPROM with I2C interface, ideal for industrial applications. It operates at a supply voltage of 1.8V to 5.5V and features a max clock frequency of 1 MHz. Its compact design ensures efficient use in space-constrained environments.

1 MHz

S-PBGA-B4

.833 mm

65536 bit

EEPROM

8

1

4

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

.3 mm

I2C

5.5 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

NOT SPECIFIED

.833 mm

5 ms

PCA24S08DP,118 by NXP Semiconductors

PCA24S08DP,118

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSSOP; Package Shape: SQUARE; JESD-30 Code: S-PDSO-G8;

.4 MHz

10

100000 Write/Erase Cycles

10101MMR

S-PDSO-G8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

3/3.3

Not Qualified

1.1 mm

I2C

.000015 Amp

EEPROMs

1 mA

3.6 V

2.5 V

YES

CMOS

INDUSTRIAL

SILVER

GULL WING

.65 mm

DUAL

3 mm

HARDWARE/SOFTWARE

11AA020-I/MS by Microchip Technology

11AA020-I/MS

Microchip Technology

11AA020-I/MS by Microchip Technology is an EEPROM with 256x8 organization, 2048-bit memory density, and 1-WIRE serial bus type. It operates at a max clock frequency of 1 MHz and has a write protection feature for software applications. Ideal for industrial use with a temperature grade of -40 to 85 °C, it offers high endurance with 1000000 write/erase cycles.

1 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

NO

NO

TS 16949

1.1 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

NO

3 mm

10 ms

SOFTWARE

11AA020T-I/MS by Microchip Technology

11AA020T-I/MS

Microchip Technology

11AA020T-I/MS by Microchip Tech is a 256x8 EEPROM with 1-WIRE serial bus, 1000000 write/erase cycles endurance, and 2048-bit memory density. Operating at -40 to 85 °C, it has a max clock frequency of 1 MHz and software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

1 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

NO

NO

TS 16949

1.1 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

NO

3 mm

10 ms

SOFTWARE

CAT24C64ZI-GT3 by Onsemi

CAT24C64ZI-GT3

Onsemi

CAT24C64ZI-GT3 by Onsemi is an 8KX8 EEPROM with I2C control byte. It operates at 1 MHz clock frequency, has 1000000 write/erase cycles endurance, and supports a max supply voltage of 5.5V. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact form factor.

100 YEAR DATA RETENTION

1 MHz

100

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e4

3 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

1.8/5

Not Qualified

1.1 mm

I2C

.000003 Amp

EEPROMs

2 mA

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

XQ18V04VQ44N by Xilinx

XQ18V04VQ44N

Xilinx

CONFIGURATION MEMORY; Temperature Grade: MILITARY; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Maximum Seated Height: 1.2 mm;

20 MHz

10

20000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

125 Cel

-55 Cel

512KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

Flash Memories

50 mA

3.6 V

3 V

3.3

YES

CMOS

MILITARY

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

40k Rad(Si)

NOR TYPE

10 mm

24LC16B-E/MS by Microchip Technology

24LC16B-E/MS

Microchip Technology

24LC16B-E/MS by Microchip Technology is a 2Kx8 EEPROM with I2C control byte 1010MMMR. Operating at 5V, it offers 1000000 write/erase cycles and -40 to 125°C temperature range. Ideal for automotive applications due to AEC-Q100 screening level and small outline package style.

.4 MHz

200

1000000 Write/Erase Cycles

1010MMMR

S-PDSO-G8

e3

3 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

24LC01BT-E/MS by Microchip Technology

24LC01BT-E/MS

Microchip Technology

24LC01BT-E/MS by Microchip Technology is a 1024-bit EEPROM with 1000000 write/erase cycles. Operating at 5V, it offers 128x8 organization and I2C serial bus type for automotive applications. With a max clock frequency of 0.4 MHz, it features hardware write protection and operates in the temperature range of -40 to 125°C.

.4 MHz

200

1000000 Write/Erase Cycles

1010XXXR

S-PDSO-G8

e3

3 mm

1024 bit

EEPROM

8

1

1

1

8

128 words

128

SYNCHRONOUS

125 Cel

-40 Cel

128X8

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

1.1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24AA128-I/MS by Microchip Technology

24AA128-I/MS

Microchip Technology

24AA128-I/MS by Microchip Tech is an EEPROM with 16KX8 organization, 131072 bit memory density, and 1000000 Write/Erase cycles. Operating in industrial temperature range, it uses I2C serial bus for applications requiring reliable non-volatile memory storage. With a small outline package style and low standby current of 0.000005 Amp, it's ideal for space-constrained designs.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e3

3 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

AEC-Q100

1.1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

93AA46C-I/MS by Microchip Technology

93AA46C-I/MS

Microchip Technology

93AA46C-I/MS by Microchip Technology is a 1024-bit EEPROM with 64x16 organization, operating at 2.5V and up to 3MHz clock frequency. It features software write protection, MICROWIRE serial bus type, and industrial temperature grade suitability for various applications requiring reliable non-volatile memory storage.

8

3 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

1024 bit

EEPROM

16

1

1

1

8

64 words

64

SYNCHRONOUS

85 Cel

-40 Cel

64X16

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

YES

NO

TS 16949

1.1 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

3 mm

6 ms

SOFTWARE

93LC66C-I/MS by Microchip Technology

93LC66C-I/MS

Microchip Technology

93LC66C-I/MS by Microchip Tech is a 256x16 EEPROM with 3MHz clock freq. Ideal for industrial temp applications, it offers 1M write/erase cycles, MICROWIRE serial bus, and software write protection. Operating at 3V, it has a standby current of 0.000001A and can withstand -40 to 85°C temps.

ALSO CONFIGURABLE AS 512 X 8

8

3 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

4096 bit

EEPROM

16

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

TOTEM POLE

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/5

Not Qualified

YES

NO

TS 16949

1.1 mm

MICROWIRE

.000001 Amp

EEPROMs

2 mA

5.5 V

2.5 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

YES

3 mm

6 ms

SOFTWARE

24AA024-I/MS by Microchip Technology

24AA024-I/MS

Microchip Technology

24AA024-I/MS by Microchip Technology is a small outline EEPROM with a memory density of 2048 bit. It operates in synchronous mode and has a max clock frequency of 0.4 MHz. It is commonly used in industrial applications for its high endurance of 1000000 write/erase cycles.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e3

3 mm

2048 bit

EEPROM

8

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

2/5

2.5

Not Qualified

TS 16949

1.1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

24AA256T-E/MS by Microchip Technology

24AA256T-E/MS

Microchip Technology

24AA256T-E/MS by Microchip Tech is an EEPROM with 32KX8 organization, 32768 words, and 262144-bit memory density. Operating at -40 to 125 °C, it has a max clock frequency of 0.4 MHz for automotive applications. Featuring I2C serial bus type, it offers 1000000 write/erase cycles endurance.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e3

3 mm

262144 bit

EEPROM

8

1

1

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

OPEN-DRAIN

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

260

1.8/5

2.5

Not Qualified

NO

AEC-Q100

1.1 mm

I2C

.000005 Amp

EEPROMs

3 mA

5.5 V

1.7 V

2.5

YES

CMOS

AUTOMOTIVE

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

40

3 mm

5 ms

HARDWARE

M24512-WMW6G by STMicroelectronics

M24512-WMW6G

STMicroelectronics

M24512-WMW6G by STMicroelectronics is a 64Kx8 EEPROM with a synchronous operating mode and I2C interface. It operates b/w -40 °C to 85 °C, supports 3/5V supply, and offers 1M write/erase cycles. Ideal for industrial applications requiring reliable data storage.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.62 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.5 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

5.62 mm

5 ms

HARDWARE

M24512-WMW6TG by STMicroelectronics

M24512-WMW6TG

STMicroelectronics

STMicroelectronics M24512-WMW6TG is an EEPROM with 64KX8 organization, operating at 5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a small outline package.

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.62 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

2.5 mm

I2C

.000002 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE

M95256-WMW6G by STMicroelectronics

M95256-WMW6G

STMicroelectronics

M95256-WMW6G by STMicroelectronics is a 32Kx8 EEPROM with a synchronous operating mode and SPI serial bus type. It operates b/w -40 °C to 85 °C, supports 2.5V to 5.5V supply, and offers up to 1M write/erase cycles, ideal for industrial applications. Its compact SOIC package ensures efficient space utilization in electronic designs.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e3

5.62 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

2.5 mm

SPI

.000005 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE/SOFTWARE

M95256-WMW6TG by STMicroelectronics

M95256-WMW6TG

STMicroelectronics

M95256-WMW6TG by STMicroelectronics is a 32Kx8 EEPROM with a max clock frequency of 5 MHz and operates b/w -40 °C to 85 °C. It features hardware/software write protection and supports SPI for efficient data storage. Ideal for industrial applications requiring reliable memory solutions.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

e3

5.62 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.3

SQUARE

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

2.5 mm

SPI

.000005 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

30

5.62 mm

5 ms

HARDWARE/SOFTWARE

25AA160B-I/MS by Microchip Technology

25AA160B-I/MS

Microchip Technology

25AA160B-I/MS by Microchip Technology is a serial EEPROM with a memory density of 16384 bit. It operates at a max clock frequency of 10 MHz and has an endurance of 1,000,000 write/erase cycles. This EEPROM is commonly used in industrial applications that require reliable non-volatile memory storage.

10 MHz

200

1000000 Write/Erase Cycles

S-PDSO-G8

e3

3 mm

16384 bit

EEPROM

8

1

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.19

SQUARE

SMALL OUTLINE

SERIAL

2/5

2.5

Not Qualified

TS 16949

1.1 mm

SPI

.000001 Amp

EEPROMs

6 mA

5.5 V

1.8 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE