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TSOP1 EEPROM 10

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
TC58NVG1S3ETA00 by Toshiba

TC58NVG1S3ETA00

Toshiba

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Sectors/Size: 2K;

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

2147483648 bit

EEPROM

8

1

2K

48

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

.5 mm

DUAL

NO

NAND TYPE

12 mm

TC58NVG2S0FTA00 by Toshiba

TC58NVG2S0FTA00

Toshiba

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

R-PDSO-G48

18.4 mm

4294967296 bit

EEPROM

8

1

48

536870912 words

512M

ASYNCHRONOUS

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

TH58NVG4S0FTA20 by Toshiba

TH58NVG4S0FTA20

Toshiba

Toshiba's TH58NVG4S0FTA20 EEPROM operates at 3.3V, with 48 terminals in a small outline package. It has a memory density of 17179869184 bits and is ideal for commercial applications requiring parallel operation with a programming voltage of 3V.

R-PDSO-G48

18.4 mm

17179869184 bit

EEPROM

8

1

48

2147483648 words

2G

ASYNCHRONOUS

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

TH58NVG5S0FTA20 by Toshiba

TH58NVG5S0FTA20

Toshiba

Toshiba's TH58NVG5S0FTA20 EEPROM features 48 terminals, 3.3V supply voltage, and 70°C max temp. Ideal for commercial applications, it offers a memory density of 34359738368 bits in a small outline package with gull wing terminals.

R-PDSO-G48

18.4 mm

34359738368 bit

EEPROM

8

1

48

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

TH58NVG5S0FTAK0 by Toshiba

TH58NVG5S0FTAK0

Toshiba

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 4GX8;

R-PDSO-G48

18.4 mm

34359738368 bit

EEPROM

8

1

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

AT28C010E-15TI by Atmel

AT28C010E-15TI

Atmel

Atmel's AT28C010E-15TI is a 128Kx8 EEPROM with 100,000 Write/Erase cycles. Operating at 5V, it offers a max access time of 150ns and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

150 ns

AUTOMATIC WRITE

NO

YES

100000 Write/Erase Cycles

R-PDSO-G32

e0

18.4 mm

1048576 bit

EEPROM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

128

PARALLEL

240

5

5

Not Qualified

1.2 mm

.0002 Amp

EEPROMs

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

8 mm

10 ms

AT28BV256-20TI by Atmel

AT28BV256-20TI

Atmel

AT28BV256-20TI by Atmel is a 32Kx8 EEPROM with 262144-bit memory density. It operates at 3V, has a max access time of 200ns, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factors.

200 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDSO-G28

e0

11.8 mm

262144 bit

EEPROM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

64

PARALLEL

240

3/3.3

3

Not Qualified

1.2 mm

.00005 Amp

EEPROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.55 mm

DUAL

YES

8 mm

10 ms

AT28C64B-15TU-T by Microchip Technology

AT28C64B-15TU-T

Microchip Technology

Microchip AT28C64B-15TU-T is an 8KX8 EEPROM with 100000 Write/Erase Cycles, operating at -40 to 85 °C. It has a supply voltage range of 4.5V to 5.5V and offers fast access time of 150 ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact thin profile package.

150 ns

100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE

10

100000 Write/Erase Cycles

R-PDSO-G28

e3

11.8 mm

65536 bit

EEPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.55 mm

DUAL

8 mm

10 ms

AT28LV010-20TU-235 by Microchip Technology

AT28LV010-20TU-235

Microchip Technology

AT28LV010-20TU-235 by Microchip Technology is a 128Kx8 EEPROM with 100,000 Write/Erase Cycles. It operates at -40 to 85°C, with a programming voltage of 3V and max access time of 200ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

200 ns

10

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

1048576 bit

EEPROM

8

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

.00005 Amp

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

10 ms

HARDWARE/SOFTWARE

AT28LV010-20TU-319 by Microchip Technology

AT28LV010-20TU-319

Microchip Technology

AT28LV010-20TU-319 by Microchip Tech is a 128KX8 EEPROM with 131072 words, operating at 3.3V. It offers 100000 Write/Erase Cycles, 200 ns Access Time, and supports Hardware/Software Write Protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact SMALL OUTLINE package.

200 ns

10

100000 Write/Erase Cycles

R-PDSO-G32

e3

18.4 mm

1048576 bit

EEPROM

8

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.56,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

.00005 Amp

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

8 mm

10 ms

HARDWARE/SOFTWARE