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QCCJ EEPROM 68

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
XC17V16PC44C by Xilinx

XC17V16PC44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Terminal Position: QUAD;

20 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

16777216 bit

CONFIGURATION MEMORY

8

3

1

44

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC17V16PC44I by Xilinx

XC17V16PC44I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Maximum Supply Current: 100 mA;

20 MHz

COMMON

S-PQCC-J44

e0

16.5862 mm

16777216 bit

CONFIGURATION MEMORY

8

3

1

44

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

225

3.3

Not Qualified

4.57 mm

.001 Amp

OTP ROMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

QUAD

30

16.5862 mm

XC18V02PC44C0936 by Xilinx

XC18V02PC44C0936

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Terminal Form: J BEND;

20 ns

S-PQCC-J44

e0

16.5862 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

Not Qualified

4.572 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

16.5862 mm

XC17256EPCG20C by Xilinx

XC17256EPCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Package Equivalence Code: LDCC20,.4SQ;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e3

8.9662 mm

262144 bit

CONFIGURATION MEMORY

1

3

1

20

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

245

5

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC18V01PCG20C by Xilinx

XC18V01PCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): 30;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQCC-J20

e3

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

245

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC18V02PCG44C by Xilinx

XC18V02PCG44C

Xilinx

XC18V02PCG44C by Xilinx is a 256Kx8 NOR type EEPROM with 20MHz clock frequency, operating at -40 to 85°C. It has 20000 write/erase cycles, suitable for industrial applications requiring configuration memory with 3.3V supply and parallel/serial interface.

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQCC-J44

e3

16.5862 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

245

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

NOR TYPE

16.5862 mm

XC18V04PCG44C by Xilinx

XC18V04PCG44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; JESD-30 Code: S-PQCC-J44;

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQCC-J44

e3

16.5862 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

245

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

NOR TYPE

16.5862 mm

XC18V512PCG20C by Xilinx

XC18V512PCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): 30;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQCC-J20

e3

8.9662 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

20

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

245

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm

XC1701LPCG20I by Xilinx

XC1701LPCG20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e3

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

245

3.3

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC1701L-PCG20C by Xilinx

XC1701L-PCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Additional Features: USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e3

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

245

3.3

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17128EPCG20C by Xilinx

XC17128EPCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Terminal Position: QUAD;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e3

8.9662 mm

131072 bit

CONFIGURATION MEMORY

1

3

1

20

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

245

5

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

8.9662 mm

AT28C64B-15JU-235 by Microchip Technology

AT28C64B-15JU-235

Microchip Technology

AT28C64B-15JU-235 by Microchip: 8KX8 EEPROM, 5V, 32-terminals, -40 to 85°C temp range. Ideal for industrial applications requiring reliable non-volatile memory with 100k write/erase cycles and fast access time of 150ns.

150 ns

10

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

65536 bit

EEPROM

8

3

1

1

32

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

3.556 mm

.0001 Amp

400 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

40

11.43 mm

10 ms

HARDWARE/SOFTWARE

AT28LV010-20JU-051 by Microchip Technology

AT28LV010-20JU-051

Microchip Technology

AT28LV010-20JU-051 by Microchip Technology is a 128KX8 EEPROM with 131072 words. It operates at 3.3V, has a max access time of 200ns, and offers parallel programming mode. This chip is ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

200 ns

R-PQCC-J32

13.97 mm

1048576 bit

EEPROM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

PARALLEL

NOT SPECIFIED

3

3.556 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

11.43 mm

10 ms

AT28LV010-20JU-235 by Microchip Technology

AT28LV010-20JU-235

Microchip Technology

AT28LV010-20JU-235 by Microchip is a 128Kx8 EEPROM with 3.3V supply, 200ns access time, and 100000 write/erase cycles. It is used in industrial applications for non-volatile memory storage due to its high endurance and parallel interface.

200 ns

10

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

EEPROM

8

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

3

3.556 mm

.00005 Amp

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

10 ms

HARDWARE/SOFTWARE

AT28LV010-20JU-319 by Microchip Technology

AT28LV010-20JU-319

Microchip Technology

AT28LV010-20JU-319 by Microchip Technology is a 128KX8 EEPROM with 3.3V supply voltage, 200ns access time, and 100000 write/erase cycles. It is used in industrial applications for non-volatile memory storage due to its high endurance and parallel interface.

200 ns

10

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

EEPROM

8

3

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

245

3

3.556 mm

.00005 Amp

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

40

11.43 mm

10 ms

HARDWARE/SOFTWARE

AT28LV010-20JU-630 by Microchip Technology

AT28LV010-20JU-630

Microchip Technology

AT28LV010-20JU-630 by Microchip is a 128KX8 EEPROM with 3.3V supply, operating from -40 to 85 °C. It offers 100000 Write/Erase Cycles, 200 ns access time, and supports hardware/software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

200 ns

10

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

EEPROM

8

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LCC32,.45X.55

RECTANGULAR

CHIP CARRIER

PARALLEL

3

3.556 mm

.00005 Amp

15 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

11.43 mm

10 ms

HARDWARE/SOFTWARE

AT28C256-15JU-T by Microchip Technology

AT28C256-15JU-T

Microchip Technology

Microchip AT28C256-15JU-T is a 32Kx8 EEPROM with 150ns access time, operating at -40 to 85°C. It features asynchronous mode, 5V programming voltage, and parallel interface. Ideal for industrial applications requiring reliable non-volatile memory storage in compact chip carrier package.

150 ns

R-PQCC-J32

e3

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

3.556 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

40

11.43 mm

10 ms

AT28C256E-15JU-T by Microchip Technology

AT28C256E-15JU-T

Microchip Technology

AT28C256E-15JU-T by Microchip Technology is a 32KX8 EEPROM with a max access time of 150 ns. It operates at a nominal voltage of 5V and has an industrial temperature grade. This memory IC is commonly used in applications requiring non-volatile storage.

150 ns

R-PQCC-J32

e3

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

3.556 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

40

11.43 mm

AT28HC256E-12JU-T by Microchip Technology

AT28HC256E-12JU-T

Microchip Technology

AT28HC256E-12JU-T by Microchip: 32KX8 EEPROM with 120ns access time, operates at -40 to 85°C. Ideal for industrial applications requiring parallel memory technology and a supply voltage range of 4.5V to 5.5V. Package style is chip carrier with dimensions of 13.97mm x 11.43mm x 3.556mm, featuring J bend terminals on a rectangular body suitable for surface mount assembly.

120 ns

R-PQCC-J32

e3

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

3.556 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

40

11.43 mm

AT28HC256E-90JU-T by Microchip Technology

AT28HC256E-90JU-T

Microchip Technology

AT28HC256E-90JU-T by Microchip: 32KX8 EEPROM with 262144-bit memory density, operates at 5V, and has a max access time of 90ns. Ideal for industrial applications requiring fast and reliable non-volatile memory storage in a compact chip carrier package.

90 ns

AUTOMATIC WRITE

R-PQCC-J32

e3

13.97 mm

262144 bit

EEPROM

8

2

1

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

QCCJ

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

MIL-STD-883

3.556 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

11.43 mm

10 ms