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48 EEPROM 16

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
TC58NVG1S3ETA00 by Toshiba

TC58NVG1S3ETA00

Toshiba

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Sectors/Size: 2K;

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

2147483648 bit

EEPROM

8

1

2K

48

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

.5 mm

DUAL

NO

NAND TYPE

12 mm

TC58NVG2S0FTA00 by Toshiba

TC58NVG2S0FTA00

Toshiba

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

R-PDSO-G48

18.4 mm

4294967296 bit

EEPROM

8

1

48

536870912 words

512M

ASYNCHRONOUS

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

TH58NVG4S0FTA20 by Toshiba

TH58NVG4S0FTA20

Toshiba

Toshiba's TH58NVG4S0FTA20 EEPROM operates at 3.3V, with 48 terminals in a small outline package. It has a memory density of 17179869184 bits and is ideal for commercial applications requiring parallel operation with a programming voltage of 3V.

R-PDSO-G48

18.4 mm

17179869184 bit

EEPROM

8

1

48

2147483648 words

2G

ASYNCHRONOUS

70 Cel

0 Cel

2GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

TH58NVG5S0FTA20 by Toshiba

TH58NVG5S0FTA20

Toshiba

Toshiba's TH58NVG5S0FTA20 EEPROM features 48 terminals, 3.3V supply voltage, and 70°C max temp. Ideal for commercial applications, it offers a memory density of 34359738368 bits in a small outline package with gull wing terminals.

R-PDSO-G48

18.4 mm

34359738368 bit

EEPROM

8

1

48

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

12 mm

TH58NVG5S0FTAK0 by Toshiba

TH58NVG5S0FTAK0

Toshiba

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 4GX8;

R-PDSO-G48

18.4 mm

34359738368 bit

EEPROM

8

1

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

12 mm

XCF08PFS48C by Xilinx

XCF08PFS48C

Xilinx

Xilinx XCF08PFS48C is a 1.8V EEPROM with 8388608-bit memory density, suitable for industrial applications. It operates synchronously at up to 33MHz clock frequency and offers 20000 write/erase cycles. With a compact rectangular package style and thin profile, it's ideal for space-constrained designs requiring reliable configuration memory.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF08PVO48C by Xilinx

XCF08PVO48C

Xilinx

Xilinx XCF08PVO48C is a 1.8V EEPROM with 8388608-bit memory density, operating at up to 33MHz clock frequency. Ideal for industrial applications, it offers 20000 write/erase cycles and features a small outline package style.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PDSO-G48

e0

18.45 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

SOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE

SERIAL

225

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF16PFS48C by Xilinx

XCF16PFS48C

Xilinx

Xilinx XCF16PFS48C is a 1.8V EEPROM with 16MX1 organization and 16777216 bit memory density. It operates in synchronous mode and has a max supply current of 40mA. This configuration memory is commonly used in industrial applications for storing data with endurance of 20000 write/erase cycles.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF32PFS48C by Xilinx

XCF32PFS48C

Xilinx

Xilinx XCF32PFS48C is a 32MX1 EEPROM with 33554432-bit memory density. It operates at 1.8V, has 48 terminals, and supports industrial temperature grade. Ideal for configuration memory applications, it offers 20000 write/erase cycles and serial interface with NOR type technology.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF08PFSG48C by Xilinx

XCF08PFSG48C

Xilinx

Xilinx XCF08PFSG48C is a 1.8V EEPROM with 8MX1 organization, NOR type, and 8388608-bit memory density. It operates at -40 to 85°C for industrial applications, featuring a max clock frequency of 33 MHz in a thin profile grid array package.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF08PVOG48C by Xilinx

XCF08PVOG48C

Xilinx

Xilinx XCF08PVOG48C is a 1.8V EEPROM with 8MX1 organization, NOR type, and 8388608-bit memory density. Operating at -40 to 85°C, it's ideal for industrial applications requiring a small outline package with thin profile and shrink pitch. With synchronous operation up to 33MHz, this configuration memory offers reliable performance in various electronic systems.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF16PFSG48C by Xilinx

XCF16PFSG48C

Xilinx

Xilinx XCF16PFSG48C is a 1.8V EEPROM with 16MX1 organization, NOR type, and 16777216-bit memory density. It operates in industrial temperature range (-40 to 85 °C) and has a thin profile grid array package suitable for configuration memory applications. With 20000 write/erase cycles endurance, it offers reliable performance in various industrial settings.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF16PVOG48C by Xilinx

XCF16PVOG48C

Xilinx

Xilinx XCF16PVOG48C is a 1.8V EEPROM with 16MX1 organization, NOR type, and 16777216-bit memory density. It operates in industrial temperature range (-40 to 85°C) and offers 20000 write/erase cycles. Ideal for configuration memory applications due to its small outline package style and serial interface.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF32PFSG48C by Xilinx

XCF32PFSG48C

Xilinx

Xilinx XCF32PFSG48C is a 32MX1 EEPROM with 3-STATE output, operating at 50 MHz clock frequency. It has 33554432-bit memory density and supports NOR type technology. Ideal for industrial applications, it offers 20000 Write/Erase cycles endurance and operates in a temperature range of -40 to 85°C.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

50 MHz

20

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

HARDWARE

XCF32PVOG48C by Xilinx

XCF32PVOG48C

Xilinx

Xilinx XCF32PVOG48C is a 32MX1 EEPROM with 33554432-bit memory density. Operating at 1.8V, it offers 20000 write/erase cycles and supports industrial temperature grade applications. With a small outline package style, it features synchronous operation and GULL WING terminal form for serial configuration memory needs.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XQF32PVOG48M by Xilinx

XQF32PVOG48M

Xilinx

Xilinx XQF32PVOG48M is a 32MX1 NOR EEPROM with 33554432-bit memory density. Operating at 1.8V, it offers 20000 write/erase cycles and has a max access time of 30ns. Ideal for military-grade applications requiring configuration memory with small outline package style.

30 ns

20

20000 Write/Erase Cycles

R-PDSO-G48

e4

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

125 Cel

-55 Cel

32MX1

PLASTIC/EPOXY

SOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE

PARALLEL/SERIAL

260

1.8/3.3,1.8

Not Qualified

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

MILITARY

NICKEL PALLADIUM GOLD

GULL WING

.5 mm

DUAL

30

NOR TYPE