Loading...

28 EEPROM 24

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
AT28LV256-25PC by Atmel

AT28LV256-25PC

Atmel

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Memory Width: 8;

250 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

36.95 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

3.3

3

Not Qualified

5.59 mm

.00002 Amp

EEPROMs

15 mA

3.465 V

3.135 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28LV256-25PI by Atmel

AT28LV256-25PI

Atmel

AT28LV256-25PI by Atmel is a 32Kx8 EEPROM with a supply voltage of 3.3V, operating temperature range of -40 to 85°C, and endurance of 10,000 write/erase cycles. It is commonly used in industrial applications for storing data reliably.

250 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

36.95 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

3.3

3

Not Qualified

5.59 mm

.00005 Amp

EEPROMs

15 mA

3.465 V

3.135 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28C256-15PC by Atmel

AT28C256-15PC

Atmel

AT28C256-15PC by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 150ns and features a memory density of 262144 bits. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

150 ns

AUTOMATIC WRITE

NO

YES

10

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

225

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

30

YES

15.24 mm

10 ms

AT28C256-15PI by Atmel

AT28C256-15PI

Atmel

AT28C256-15PI by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 150ns and endurance of 262144 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

150 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

240

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

THROUGH-HOLE

2.54 mm

DUAL

30

YES

15.24 mm

10 ms

AT28C256F-15PI by Atmel

AT28C256F-15PI

Atmel

AT28C256F-15PI by Atmel is a 32KX8 EEPROM with 10000 Write/Erase Cycles. It operates at 5V, has a page size of 64 words, and offers a max access time of 150 ns. Ideal for industrial applications requiring reliable non-volatile memory storage.

150 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

3 ms

AT28HC256-12PC by Atmel

AT28HC256-12PC

Atmel

AT28HC256-12PC by Atmel is a 32KX8 EEPROM with 3-STATE output, operating at 5V. It offers 10000 Write/Erase cycles, 120 ns access time, and supports data polling. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

120 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0003 Amp

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28HC256-70PI by Atmel

AT28HC256-70PI

Atmel

AT28HC256-70PI by Atmel is a 32KX8 EEPROM with 3-STATE output, operating at 5V. It features a max access time of 70ns and can endure up to 10,000 Write/Erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage.

70 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28HC256E-12PI by Atmel

AT28HC256E-12PI

Atmel

Atmel's AT28HC256E-12PI is a 32Kx8 EEPROM with 100,000 Write/Erase Cycles. Operating at 5V, it offers 120ns Access Time and supports Asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage.

120 ns

AUTOMATIC WRITE

NO

YES

100000 Write/Erase Cycles

R-PDIP-T28

e0

37.0205 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

MIL-STD-883

4.826 mm

.0003 Amp

EEPROMs

80 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

10 ms

AT28C256E-15SC by Atmel

AT28C256E-15SC

Atmel

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 28; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;

150 ns

AUTOMATIC WRITE

NO

YES

100000 Write/Erase Cycles

R-PDSO-G28

e0

17.9 mm

262144 bit

EEPROM

8

2

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOP

SOP28,.4

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

240

5

5

Not Qualified

MIL-STD-883

2.65 mm

.0002 Amp

EEPROMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

YES

7.5 mm

10 ms

AT28BV256-20SC by Atmel

AT28BV256-20SC

Atmel

AT28BV256-20SC by Atmel is a 32Kx8 EEPROM with 262144-bit memory density. It operates at 3V, has a max access time of 200ns, and supports asynchronous mode. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

200 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDSO-G28

e0

17.9 mm

262144 bit

EEPROM

8

2

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.4

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

240

3/3.3

3

Not Qualified

2.65 mm

.00002 Amp

EEPROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

YES

7.5 mm

10 ms

AT28BV256-20SI by Atmel

AT28BV256-20SI

Atmel

Atmel's AT28BV256-20SI is a 32Kx8 EEPROM with 3V nominal voltage, operating in industrial temperature range. It offers 10,000 write/erase cycles, 200ns access time, and supports hardware/software write protection. Ideal for applications requiring reliable non-volatile memory storage in compact designs.

200 ns

AUTOMATIC WRITE

NO

YES

10

10000 Write/Erase Cycles

R-PDSO-G28

e0

17.9 mm

262144 bit

EEPROM

8

2

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.4

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

240

3/3.3

3

Not Qualified

2.65 mm

.00005 Amp

EEPROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

YES

7.5 mm

10 ms

HARDWARE/SOFTWARE

AT28BV256-20TI by Atmel

AT28BV256-20TI

Atmel

AT28BV256-20TI by Atmel is a 32Kx8 EEPROM with 262144-bit memory density. It operates at 3V, has a max access time of 200ns, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factors.

200 ns

AUTOMATIC WRITE

NO

YES

10000 Write/Erase Cycles

R-PDSO-G28

e0

11.8 mm

262144 bit

EEPROM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP1

TSSOP28,.53,22

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

64

PARALLEL

240

3/3.3

3

Not Qualified

1.2 mm

.00005 Amp

EEPROMs

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.55 mm

DUAL

YES

8 mm

10 ms

CAT28C256L15 by Onsemi

CAT28C256L15

Onsemi

CAT28C256L15 by Onsemi is a 32KX8 EEPROM with 262144 bit memory density. It operates at 5V, has 100000 Write/Erase Cycles endurance, and offers 150 ns access time. Ideal for applications requiring non-volatile memory storage in commercial temperature environments.

150 ns

NO

YES

100

100000 Write/Erase Cycles

R-PDIP-T28

e3

36.695 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

5.08 mm

.00015 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

5 ms

CAT28C256LI-15 by Catalyst Semiconductor

CAT28C256LI-15

Catalyst Semiconductor

CAT28C256LI-15 by Catalyst Semiconductor is a 32KX8 EEPROM with a memory density of 262144 bit. It operates in asynchronous mode, has a max access time of 150 ns, and can endure up to 100000 write/erase cycles. This memory IC is commonly used in industrial applications requiring reliable non-volatile storage.

150 ns

NO

YES

100000 Write/Erase Cycles

R-PDIP-T28

e3

36.695 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

5.08 mm

.00015 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

5 ms

CAT28C64BL-12 by Catalyst Semiconductor

CAT28C64BL-12

Catalyst Semiconductor

CAT28C64BL-12 by Catalyst Semiconductor is an 8KX8 EEPROM with a memory density of 65536 bit. It operates at 5V, has a programming voltage of 5V, and offers endurance up to 1M Write/Erase cycles. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

120 ns

NO

YES

1000000 Write/Erase Cycles

R-PDIP-T28

e3

36.695 mm

65536 bit

EEPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

32

PARALLEL

5

5

Not Qualified

5.08 mm

.0001 Amp

EEPROMs

30 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

5 ms

W27C512-45Z by Winbond Electronics

W27C512-45Z

Winbond Electronics

Winbond Electronics' W27C512-45Z is a 64KX8 EEPROM with 524288 bit memory density. Operating at 5V, it offers a max access time of 45ns and uses parallel interface. Ideal for commercial applications requiring fast data retrieval in a compact IN-LINE package style.

45 ns

R-PDIP-T28

37.08 mm

524288 bit

EEPROM

8

1

28

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

12

Not Qualified

5.33 mm

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED

15.24 mm

AT28C64B-15TU-T by Microchip Technology

AT28C64B-15TU-T

Microchip Technology

Microchip AT28C64B-15TU-T is an 8KX8 EEPROM with 100000 Write/Erase Cycles, operating at -40 to 85 °C. It has a supply voltage range of 4.5V to 5.5V and offers fast access time of 150 ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact thin profile package.

150 ns

100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE

10

100000 Write/Erase Cycles

R-PDSO-G28

e3

11.8 mm

65536 bit

EEPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.55 mm

DUAL

8 mm

10 ms

AT28C256-15DM/883-815 by Microchip Technology

AT28C256-15DM/883-815

Microchip Technology

AT28C256-15DM/883-815 by Microchip Technology is a MILITARY-grade EEPROM with 32KX8 organization, 150 ns access time, and 10 ms write cycle time. It operates at 5V with -55 to 125 °C temperature range. Ideal for applications requiring reliable non-volatile memory in harsh environments.

150 ns

R-GDIP-T28

e0

37.215 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

125 Cel

-55 Cel

32KX8

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

PARALLEL

5

MIL-STD-883 Class C

5.72 mm

5.5 V

4.5 V

5

NO

CMOS

MILITARY

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

10 ms

AT28BV256-20SU-T by Microchip Technology

AT28BV256-20SU-T

Microchip Technology

AT28BV256-20SU-T by Microchip Technology is a 32KX8 EEPROM with a memory density of 262144 bit. It operates at a voltage range of 2.7V to 3.6V and has an endurance of 10000 Write/Erase cycles. This EEPROM is commonly used in industrial applications for storing and retrieving data reliably.

200 ns

THE PART EXISTS IN EEPROM3V

10000 Write/Erase Cycles

R-PDSO-G28

e3

17.9 mm

262144 bit

EEPROM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP28,.4

RECTANGULAR

SMALL OUTLINE

64

PARALLEL

260

3

2.65 mm

.00005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

YES

7.5 mm

10 ms

HARDWARE/SOFTWARE

AT28HC256E-12SU-202 by Microchip Technology

AT28HC256E-12SU-202

Microchip Technology

AT28HC256E-12SU-202 by Microchip Technology is a 32KX8 EEPROM with 262144 bit memory density. It operates at 5V, has a max access time of 120ns, and supports parallel programming. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

120 ns

R-PDSO-G28

17.9 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

2.65 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

7.5 mm

10 ms

AT28C256F-15DM/883-815 by Microchip Technology

AT28C256F-15DM/883-815

Microchip Technology

EEPROM; Temperature Grade: MILITARY; No. of Terminals: 28; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 32KX8;

150 ns

AUTOMATIC WRITE

NO

YES

10

10000 Write/Erase Cycles

R-GDIP-T28

37.215 mm

262144 bit

EEPROM

8

1

1

28

32768 words

32K

ASYNCHRONOUS

125 Cel

-55 Cel

32KX8

CERAMIC, GLASS-SEALED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

MIL-STD-883 Class B

5.72 mm

.0003 Amp

50 mA

5.5 V

4.5 V

5

NO

CMOS

MILITARY

THROUGH-HOLE

2.54 mm

DUAL

YES

15.24 mm

3 ms

AT28HC256E-12SU-T by Microchip Technology

AT28HC256E-12SU-T

Microchip Technology

The Microchip AT28HC256E-12SU-T is a 32Kx8 EEPROM with 120ns access time, operating at 5V. It features industrial temperature grade, parallel interface, and 10ms write cycle time. Ideal for applications requiring non-volatile memory storage in harsh environments.

120 ns

R-PDSO-G28

e3

17.9 mm

262144 bit

EEPROM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

2.65 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

7.5 mm

10 ms

AT28HC256E-90TU-T by Microchip Technology

AT28HC256E-90TU-T

Microchip Technology

AT28HC256E-90TU-T by Microchip Tech: 32KX8 EEPROM, 262144-bit memory density, 90 ns access time. Ideal for industrial applications requiring fast and reliable non-volatile memory storage.

90 ns

R-PDSO-G28

11.8 mm

262144 bit

EEPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

TSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.55 mm

DUAL

8 mm

10 ms

AT28HC256F-90SU-T by Microchip Technology

AT28HC256F-90SU-T

Microchip Technology

AT28HC256F-90SU-T by Microchip: 32KX8 EEPROM with 262144 bit memory density, operates at 5V, has 90 ns access time. Ideal for industrial applications requiring fast and reliable non-volatile memory storage.

90 ns

R-PDSO-G28

e3

17.9 mm

262144 bit

EEPROM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

2.65 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

7.5 mm

3 ms