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AT28HC256E-90TU-T

Microchip Technology

AT28HC256E-90TU-T by Microchip Technology

AT28HC256E-90TU-T by Microchip Tech: 32KX8 EEPROM, 262144-bit memory density, 90 ns access time. Ideal for industrial applications requiring fast and reliable non-volatile memory storage.

Median Price

$0.372

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 38 parts In-Stock

1+ parts

$0.379

100+ parts

$0.366

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38

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$0.366

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Verical

USA . 38 parts In-Stock

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-

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$0.366

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38

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$0.366

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Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$7.810

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100

$7.810

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Vyrian

USA . 2,180 parts In-Stock

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VNN

France . 1,769 parts In-Stock

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Ampacity Inc.

Singapore . 31 parts In-Stock

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$0.311

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31

$0.311

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Continental Prestige Electronics

USA . 917 parts In-Stock

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$7.810

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$7.654

917

$7.810

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$7.654

AZTECH Wire

Italy . 456 parts In-Stock

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$10.389

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456

$10.389

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Vigor

Singapore . 1,990 parts In-Stock

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$10.430

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$10.430

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Ledger Components

France . 7,563 parts In-Stock

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NIA Electronics

USA . 7,513 parts In-Stock

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LOOK Integrated Logistics

Peru . 5,404 parts In-Stock

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Montano Global Distributors

Canada . 4,886 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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LMD Electronica

Estonia . 1,784 parts In-Stock

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Argo Parts USA

USA . 1,703 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$7.654

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$7.419

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$7.263

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$7.419

$7.263

Microchip USA

USA . 161 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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Lucentia Tech

USA . 100 parts In-Stock

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$4.335

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$4.014

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$4.014

100

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$4.335

$4.014

$4.014

Overview

Unlock the power of reliable data storage with the AT28HC256E-90TU-T EEPROM by Microchip Technology. Designed for industrial applications, this compact and high-quality memory device offers a seamless user experience with its fast access time and versatile programming options. Trust in the renowned manufacturer's expertise to deliver a durable and efficient solution for your electronic projects. Whether you're looking to store critical information or improve system performance, the AT28HC256E-90TU-T provides exceptional value and performance that will exceed your expectations. Elevate your designs with this cutting-edge EEPROM and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection for the EEPROM chip, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy installation on PCBs, saving space and enabling efficient assembly.

Operating Mode: ASYNCHRONOUS

The asynchronous operation mode provides flexibility and ease of integration with different systems.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage is a common standard in electronics, ensuring compatibility with many systems.

No. of Terminals: 28

The 28 terminals provide ample connectivity options for interfacing the EEPROM with other components.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature makes this EEPROM suitable for industrial environments where heat may be a factor.

Memory Density: 262144 bit

With a high memory density, this EEPROM can store a large amount of data efficiently.

Maximum Access Time: 90 ns

The fast maximum access time ensures quick read/write operations, enhancing the overall performance of the EEPROM.

Technical Specifications

EEPROM AT28HC256E-90TU-T attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Maximum Access Time:

90 ns

JESD-30 Code:

R-PDSO-G28

Length:

11.8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Programming Voltage (V):

5

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.55 mm

Terminal Position:

DUAL

Width:

8 mm

Maximum Write Cycle Time (tWC):

10 ms

Trade Compliance

AT28HC256E-90TU-T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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