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CONFIGURATION MEMORY EEPROM 209

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
XC17S30AVO8C by Xilinx

XC17S30AVO8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

COMMON

R-PDSO-G8

e0

4.9 mm

336768 bit

CONFIGURATION MEMORY

1

3

1

8

336768 words

336768

SYNCHRONOUS

70 Cel

0 Cel

336768X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30AVO8I by Xilinx

XC17S30AVO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

COMMON

R-PDSO-G8

e0

4.9 mm

336768 bit

CONFIGURATION MEMORY

1

3

1

8

336768 words

336768

SYNCHRONOUS

85 Cel

-40 Cel

336768X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S50APD8C by Xilinx

XC17S50APD8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

COMMON

R-PDIP-T8

e0

9.3599 mm

559200 bit

CONFIGURATION MEMORY

1

1

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S50APD8I by Xilinx

XC17S50APD8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

COMMON

R-PDIP-T8

e0

9.3599 mm

559200 bit

CONFIGURATION MEMORY

1

1

1

8

559200 words

559200

SYNCHRONOUS

85 Cel

-40 Cel

559200X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

225

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S50ASO20C by Xilinx

XC17S50ASO20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G20;

COMMON

R-PDSO-G20

e0

12.8 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

20

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S50ASO20I by Xilinx

XC17S50ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Package Equivalence Code: SOP20,.4;

COMMON

R-PDSO-G20

e0

12.8 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

20

559200 words

559200

SYNCHRONOUS

85 Cel

-40 Cel

559200X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S50AVO8C by Xilinx

XC17S50AVO8C

Xilinx

The Xilinx XC17S50AVO8C is a 3.3V EEPROM with 559200-bit memory density, operating in synchronous mode. It features a small outline package and Gull Wing terminals, suitable for configuration memory applications. With a max temperature of 70°C, it offers 3-STATE output characteristics and consumes up to 15mA supply current.

COMMON

R-PDSO-G8

e0

4.9 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S50AVO8I by Xilinx

XC17S50AVO8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

COMMON

R-PDSO-G8

e0

4.9 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

8

559200 words

559200

SYNCHRONOUS

85 Cel

-40 Cel

559200X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

225

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

AT18F010-30XU by Atmel

AT18F010-30XU

Atmel

Atmel's AT18F010-30XU is a 1MX1 EEPROM with 1048576 bit memory density. It operates at 3.3V, has a clock frequency of 33 MHz, and supports synchronous mode. Ideal for industrial applications, it offers 100000 Write/Erase cycles endurance in a small outline package with 0.65mm terminal pitch.

33 MHz

100000 Write/Erase Cycles

R-PDSO-G20

6.5 mm

1048576 bit

CONFIGURATION MEMORY

1

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

3.3

Not Qualified

1.2 mm

.001 Amp

EEPROMs

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

4.4 mm

XQ18V04VQ44N by Xilinx

XQ18V04VQ44N

Xilinx

CONFIGURATION MEMORY; Temperature Grade: MILITARY; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Maximum Seated Height: 1.2 mm;

20 MHz

10

20000 Write/Erase Cycles

S-PQFP-G44

e0

10 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

125 Cel

-55 Cel

512KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

240

2.5/3.3

Not Qualified

1.2 mm

.02 Amp

Flash Memories

50 mA

3.6 V

3 V

3.3

YES

CMOS

MILITARY

Tin/Lead (Sn85Pb15)

GULL WING

.8 mm

QUAD

30

40k Rad(Si)

NOR TYPE

10 mm

AT17LV010A-10PI by Atmel

AT17LV010A-10PI

Atmel

AT17LV010A-10PI by Atmel is a 1MX1 EEPROM with 1048576 bit memory density. It operates at 10 MHz clock frequency and has a max supply voltage of 3.6 V. Ideal for industrial applications requiring configuration memory in synchronous mode with hardware write protection.

ALSO OPERATES AT 5V SUPPLY

10 MHz

R-PDIP-T8

e0

9.271 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3.3/5

Not Qualified

5.334 mm

EEPROMs

10 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

HARDWARE

XCCACE128-I by Xilinx

XCCACE128-I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 50; Package Shape: RECTANGULAR; Technology: CMOS; Operating Mode: SYNCHRONOUS;

33 MHz

R-XXMA-X50

42.8 mm

134217728 bit

CONFIGURATION MEMORY

16

1

50

8388608 words

8M

SYNCHRONOUS

60 Cel

0 Cel

8MX16

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

Not Qualified

3.3 mm

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

UNSPECIFIED

UNSPECIFIED

36 mm

AT17LV010-10PI by Atmel

AT17LV010-10PI

Atmel

AT17LV010-10PI by Atmel is a 1MX1 EEPROM with 1048576 bit memory density. It operates at 3.3V, has a clock frequency of 10 MHz, and offers 100000 Write/Erase cycles. Ideal for industrial applications requiring configuration memory with hardware write protection and synchronous operation.

IT CAN OPERATES ON 4.75-5.25 RANGE SUPPLY VOLTAGE ALSO

10 MHz

90

100000 Write/Erase Cycles

R-PDIP-T8

e0

9.271 mm

1048576 bit

CONFIGURATION MEMORY

1

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3.3/5

Not Qualified

5.334 mm

.0001 Amp

EEPROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

HARDWARE

XC17S15ASO20I by Xilinx

XC17S15ASO20I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Standby Current: .00005 Amp;

COMMON

R-PDSO-G20

e0

12.8 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

20

197696 words

197696

SYNCHRONOUS

85 Cel

-40 Cel

197696X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

7.5 mm

XCF01SVO20C by Xilinx

XCF01SVO20C

Xilinx

Xilinx XCF01SVO20C is a 1MX1 EEPROM with 1048576 bit memory density. Operating at 3.3V, it offers 20000 Write/Erase Cycles endurance and supports NOR type technology. Ideal for industrial applications requiring configuration memory in a small outline package.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G20

e0

6.5024 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

225

1.8/3.3,3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF02SVO20C by Xilinx

XCF02SVO20C

Xilinx

Xilinx XCF02SVO20C is a 2MX1 EEPROM with 2097152-bit memory density. Operating at 3.3V, it offers 20000 write/erase cycles and supports industrial temperature grade applications. With a small outline package style, it is ideal for configuration memory in devices requiring low standby current and high endurance.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G20

e0

6.5024 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

20

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

225

1.8/3.3,3.3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF04SVO20C by Xilinx

XCF04SVO20C

Xilinx

Xilinx XCF04SVO20C is a 3.3V EEPROM with 4MX1 organization, NOR type, and 33MHz clock frequency. Ideal for industrial applications, it offers 4194304-bit memory density in a small outline package with dual terminals and Gull Wing form factor.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

R-PDSO-G20

e0

6.5024 mm

4194304 bit

CONFIGURATION MEMORY

1

3

1

20

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

240

1.8/3.3,3.3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF08PFS48C by Xilinx

XCF08PFS48C

Xilinx

Xilinx XCF08PFS48C is a 1.8V EEPROM with 8388608-bit memory density, suitable for industrial applications. It operates synchronously at up to 33MHz clock frequency and offers 20000 write/erase cycles. With a compact rectangular package style and thin profile, it's ideal for space-constrained designs requiring reliable configuration memory.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF08PVO48C by Xilinx

XCF08PVO48C

Xilinx

Xilinx XCF08PVO48C is a 1.8V EEPROM with 8388608-bit memory density, operating at up to 33MHz clock frequency. Ideal for industrial applications, it offers 20000 write/erase cycles and features a small outline package style.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PDSO-G48

e0

18.45 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

SOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE

SERIAL

225

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF16PFS48C by Xilinx

XCF16PFS48C

Xilinx

Xilinx XCF16PFS48C is a 1.8V EEPROM with 16MX1 organization and 16777216 bit memory density. It operates in synchronous mode and has a max supply current of 40mA. This configuration memory is commonly used in industrial applications for storing data with endurance of 20000 write/erase cycles.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF32PFS48C by Xilinx

XCF32PFS48C

Xilinx

Xilinx XCF32PFS48C is a 32MX1 EEPROM with 33554432-bit memory density. It operates at 1.8V, has 48 terminals, and supports industrial temperature grade. Ideal for configuration memory applications, it offers 20000 write/erase cycles and serial interface with NOR type technology.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XC18V02PC44C0936 by Xilinx

XC18V02PC44C0936

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: QCCJ; Package Shape: SQUARE; Terminal Form: J BEND;

20 ns

S-PQCC-J44

e0

16.5862 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

Not Qualified

4.572 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

16.5862 mm

XCF01SVOG20C by Xilinx

XCF01SVOG20C

Xilinx

The Xilinx XCF01SVOG20C is a 1MX1 NOR type EEPROM with a memory density of 1048576 bits. It operates at a nominal voltage of 3.3V and has an endurance of 20000 write/erase cycles. This configuration memory is commonly used in industrial applications for storing and retrieving data efficiently.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

6.5024 mm

1048576 bit

CONFIGURATION MEMORY

1

3

1

20

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/3.3,3.3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF02SVOG20C by Xilinx

XCF02SVOG20C

Xilinx

Xilinx XCF02SVOG20C is a 2MX1 NOR EEPROM with 2097152-bit memory density. Operating at 3.3V, it offers 20000 write/erase cycles and supports industrial temperature grade applications. With a small outline package style, 0.65mm terminal pitch, and Gull Wing terminals, it's ideal for configuration memory needs in various electronic devices.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G20

e3

6.5024 mm

2097152 bit

CONFIGURATION MEMORY

1

3

1

20

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX1

PLASTIC/EPOXY

TSSOP

TSSOP20,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/3.3,3.3

Not Qualified

1.19 mm

.001 Amp

Flash Memories

10 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

NOR TYPE

4.4 mm

XCF08PFSG48C by Xilinx

XCF08PFSG48C

Xilinx

Xilinx XCF08PFSG48C is a 1.8V EEPROM with 8MX1 organization, NOR type, and 8388608-bit memory density. It operates at -40 to 85°C for industrial applications, featuring a max clock frequency of 33 MHz in a thin profile grid array package.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF08PVOG48C by Xilinx

XCF08PVOG48C

Xilinx

Xilinx XCF08PVOG48C is a 1.8V EEPROM with 8MX1 organization, NOR type, and 8388608-bit memory density. Operating at -40 to 85°C, it's ideal for industrial applications requiring a small outline package with thin profile and shrink pitch. With synchronous operation up to 33MHz, this configuration memory offers reliable performance in various electronic systems.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF16PFSG48C by Xilinx

XCF16PFSG48C

Xilinx

Xilinx XCF16PFSG48C is a 1.8V EEPROM with 16MX1 organization, NOR type, and 16777216-bit memory density. It operates in industrial temperature range (-40 to 85 °C) and has a thin profile grid array package suitable for configuration memory applications. With 20000 write/erase cycles endurance, it offers reliable performance in various industrial settings.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF16PVOG48C by Xilinx

XCF16PVOG48C

Xilinx

Xilinx XCF16PVOG48C is a 1.8V EEPROM with 16MX1 organization, NOR type, and 16777216-bit memory density. It operates in industrial temperature range (-40 to 85°C) and offers 20000 write/erase cycles. Ideal for configuration memory applications due to its small outline package style and serial interface.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XCF32PFSG48C by Xilinx

XCF32PFSG48C

Xilinx

Xilinx XCF32PFSG48C is a 32MX1 EEPROM with 3-STATE output, operating at 50 MHz clock frequency. It has 33554432-bit memory density and supports NOR type technology. Ideal for industrial applications, it offers 20000 Write/Erase cycles endurance and operates in a temperature range of -40 to 85°C.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

50 MHz

20

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

HARDWARE

XCF32PVOG48C by Xilinx

XCF32PVOG48C

Xilinx

Xilinx XCF32PVOG48C is a 32MX1 EEPROM with 33554432-bit memory density. Operating at 1.8V, it offers 20000 write/erase cycles and supports industrial temperature grade applications. With a small outline package style, it features synchronous operation and GULL WING terminal form for serial configuration memory needs.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PDSO-G48

e3

18.45 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

NOR TYPE

12 mm

XC17S100AVOG8C by Xilinx

XC17S100AVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-609 Code: e3;

COMMON

R-PDSO-G8

e3

4.9 mm

781216 bit

CONFIGURATION MEMORY

1

3

1

8

781216 words

781216

SYNCHRONOUS

70 Cel

0 Cel

781216X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S15AVOG8C by Xilinx

XC17S15AVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Package Equivalence Code: SOP8,.25;

COMMON

R-PDSO-G8

e3

4.9 mm

197696 bit

CONFIGURATION MEMORY

1

3

1

8

197696 words

197696

SYNCHRONOUS

70 Cel

0 Cel

197696X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200AVOG8C by Xilinx

XC17S200AVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3;

COMMON

R-PDSO-G8

e3

4.9 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S200AVOG8I by Xilinx

XC17S200AVOG8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;

COMMON

R-PDSO-G8

e3

4.9 mm

1335840 bit

CONFIGURATION MEMORY

1

3

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S50AVOG8C by Xilinx

XC17S50AVOG8C

Xilinx

The Xilinx XC17S50AVOG8C is a 559200-bit EEPROM with 3.3V supply voltage, operating in synchronous mode. It features a small outline package and Gull Wing terminals, suitable for configuration memory applications. With a max temperature of 70°C, it offers 3-STATE output characteristics and consumes up to 15mA supply current.

COMMON

R-PDSO-G8

e3

4.9 mm

559200 bit

CONFIGURATION MEMORY

1

3

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

TSOP2

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.2 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC1736EVOG8C by Xilinx

XC1736EVOG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 10 MHz;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

10 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

36288 bit

CONFIGURATION MEMORY

1

3

1

8

36288 words

36288

SYNCHRONOUS

70 Cel

0 Cel

36288X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

5

Not Qualified

1.1938 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC1765ELVOG8C by Xilinx

XC1765ELVOG8C

Xilinx

XC1765ELVOG8C by Xilinx is a 64KX1 EEPROM with 3.3V supply, operating at up to 2.5 MHz clock frequency. It features a small outline package suitable for commercial applications, offering 65536 bits of memory density and serial interface for configuration memory tasks.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

2.5 MHz

COMMON

R-PDSO-G8

e3

4.9276 mm

65536 bit

CONFIGURATION MEMORY

1

3

1

8

65536 words

64K

SYNCHRONOUS

70 Cel

0 Cel

64KX1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

SERIAL

260

3.3

Not Qualified

1.1938 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

1.27 mm

DUAL

30

3.937 mm

XC18V04VQG44C by Xilinx

XC18V04VQG44C

Xilinx

XC18V04VQG44C by Xilinx is a 512Kx8 EEPROM with NOR type technology. Operating at 3.3V, it offers 20MHz clock frequency and 20000 write/erase cycles. Ideal for industrial applications requiring high memory density and fast access times in a compact thin profile package.

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e3

10 mm

4194304 bit

CONFIGURATION MEMORY

8

3

1

44

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V512VQG44C by Xilinx

XC18V512VQG44C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TQFP; Package Shape: SQUARE; Moisture Sensitivity Level (MSL): 3;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e3

10 mm

524288 bit

CONFIGURATION MEMORY

8

3

1

44

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V01VQG44C by Xilinx

XC18V01VQG44C

Xilinx

Xilinx XC18V01VQG44C is a 128Kx8 EEPROM with 3.3V nominal voltage, operating at up to 33MHz clock frequency. Ideal for industrial applications, it offers 20000 write/erase cycles and supports parallel/serial operation in a compact square package.

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e3

10 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

44

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC18V02VQG44C by Xilinx

XC18V02VQG44C

Xilinx

XC18V02VQG44C by Xilinx is a 256Kx8 EEPROM with 20MHz clock frequency, operating at -40 to 85°C. It has NOR type technology, supports parallel/serial mode, and offers 20000 write/erase cycles. Ideal for industrial applications requiring configuration memory with a memory density of 2097152 bits.

20 ns

20 MHz

20

20000 Write/Erase Cycles

S-PQFP-G44

e3

10 mm

2097152 bit

CONFIGURATION MEMORY

8

3

1

44

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

TQFP

TQFP44,.47SQ,32

SQUARE

FLATPACK, THIN PROFILE

PARALLEL/SERIAL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

QUAD

30

NOR TYPE

10 mm

XC17128EPDG8C by Xilinx

XC17128EPDG8C

Xilinx

Xilinx XC17128EPDG8C is a 128Kx1 EEPROM with 15MHz clock frequency, operating at 5V. It features synchronous operation, 3-STATE output, and serial interface. Ideal for configuration memory applications in commercial-grade devices due to its compact size and low standby current of 0.00005A.

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

131072 bit

CONFIGURATION MEMORY

1

1

1

8

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17256EPCG20C by Xilinx

XC17256EPCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Package Equivalence Code: LDCC20,.4SQ;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

S-PQCC-J20

e3

8.9662 mm

262144 bit

CONFIGURATION MEMORY

1

3

1

20

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

SERIAL

245

5

Not Qualified

4.572 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

8.9662 mm

XC17256EPDG8C by Xilinx

XC17256EPDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;

USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS

15 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

262144 bit

CONFIGURATION MEMORY

1

1

1

8

262144 words

256K

SYNCHRONOUS

70 Cel

0 Cel

256KX1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APDG8C by Xilinx

XC17S200APDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Organization: 1335840X1;

COMMON

R-PDIP-T8

e3

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

70 Cel

0 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S200APDG8I by Xilinx

XC17S200APDG8I

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

COMMON

R-PDIP-T8

e3

9.3599 mm

1335840 bit

CONFIGURATION MEMORY

1

1

1

8

1335840 words

1335840

SYNCHRONOUS

85 Cel

-40 Cel

1335840X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S50APDG8C by Xilinx

XC17S50APDG8C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 250;

COMMON

R-PDIP-T8

e3

9.3599 mm

559200 bit

CONFIGURATION MEMORY

1

1

1

8

559200 words

559200

SYNCHRONOUS

70 Cel

0 Cel

559200X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

250

3.3

Not Qualified

4.5974 mm

.001 Amp

OTP ROMs

15 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC18V01PCG20C by Xilinx

XC18V01PCG20C

Xilinx

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 20; Package Code: QCCJ; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): 30;

15 ns

33 MHz

20

20000 Write/Erase Cycles

S-PQCC-J20

e3

8.9662 mm

1048576 bit

CONFIGURATION MEMORY

8

3

1

20

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC20,.4SQ

SQUARE

CHIP CARRIER

PARALLEL/SERIAL

245

2.5/3.3,3.3

Not Qualified

4.572 mm

.01 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

30

NOR TYPE

8.9662 mm