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AUTOMOTIVE DRAM 26

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT41K256M8DA-125AAT:K by Micron Technology

MT41K256M8DA-125AAT:K

Micron Technology

Micron Technology's MT41K256M8DA-125AAT:K is a DDR3L DRAM with 256MX8 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and is designed for automotive applications due to its AEC-Q100 screening level. The memory IC offers a memory density of 2147483648 bits and supports multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

8

1

1

78

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

AEC-Q100

1.2 mm

YES

8

.012 Amp

DRAMs

195 mA

1.45 V

1.283 V

1.35

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT40A256M16LY-062EAUT:F by Micron Technology

MT40A256M16LY-062EAUT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EAUT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, common I/O type, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.

MULTI BANK PAGE BURST

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX16

OPEN-DRAIN

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

1.2 mm

YES

8

.05 Amp

1.14 V

60 mA

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

MT40A512M8SA-062EAUT:F by Micron Technology

MT40A512M8SA-062EAUT:F

Micron Technology

DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B78

e1

11 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.049 Amp

1.14 V

53 mA

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT53E128M32D2FW-046AUT:A by Micron Technology

MT53E128M32D2FW-046AUT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.1 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M32D2DS-046AUT:A by Micron Technology

MT53E128M32D2DS-046AUT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It has a very thin profile, fine pitch package style suitable for automotive applications. Features include synchronous operation, self-refresh capability, and common I/O type.

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M32D2DS-053AUT:A by Micron Technology

MT53E128M32D2DS-053AUT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-053AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level for automotive applications. The package style is grid array with very thin profile and fine pitch, suitable for single bank page burst access mode in automotive systems.

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB5432BEBH-1DAUT-F-D by Micron Technology

EDB5432BEBH-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

536870912 bit

LPDDR2 DRAM

32

1

1

134

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB4432BBBJ-1DAUT-F-D by Micron Technology

EDB4432BBBJ-1DAUT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAUT-F-D is a PLASTIC/EPOXY DRAM with SYNCHRONOUS operating mode and SELF REFRESH capability. It has a memory density of 4294967296 bit and is commonly used in AUTOMOTIVE applications.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.75 mm

YES

1.95 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

10 mm

MT40A512M8RH-075EAUT:B by Micron Technology

MT40A512M8RH-075EAUT:B

Micron Technology

DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1333 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

8

.063 Amp

1.14 V

66 mA

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

9 mm

EDB1316BDBH-1DAUT-F-D by Micron Technology

EDB1316BDBH-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 67108864 words;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1316BDBH-1DAUT-F-RTR by Micron Technology

EDB1316BDBH-1DAUT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 64M;

SINGLE BANK PAGE BURST

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1332BDBH-1DAUT-F-D by Micron Technology

EDB1332BDBH-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Access Mode: SINGLE BANK PAGE BURST;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB1332BDBH-1DAUT-F-RTR by Micron Technology

EDB1332BDBH-1DAUT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 11.5 mm;

SINGLE BANK PAGE BURST

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

16

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB2432B4MA-1DAUT-F-D by Micron Technology

EDB2432B4MA-1DAUT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

R-PBGA-B134

11.5 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

134

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

EDB2432B4MA-1DAUT-F-RTR by Micron Technology

EDB2432B4MA-1DAUT-F-RTR

Micron Technology

LPDDR2 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

SINGLE BANK PAGE BURST

R-PBGA-B134

11.5 mm

1073741824 bit

LPDDR2 DRAM

32

1

1

134

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT40A256M16GE-083EAUT:B by Micron Technology

MT40A256M16GE-083EAUT:B

Micron Technology

Micron Technology's MT40A256M16GE-083EAUT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR4 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.062 Amp

1.14 V

76 mA

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT40A512M8RH-083EAUT:B by Micron Technology

MT40A512M8RH-083EAUT:B

Micron Technology

DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

.062 Amp

1.14 V

63 mA

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT41K256M8DA-125AUT:K by Micron Technology

MT41K256M8DA-125AUT:K

Micron Technology

Micron Technology's MT41K256M8DA-125AUT:K is a DDR3L DRAM with 256MX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for automotive applications due to its thin profile, fine pitch grid array package style, and wide temperature range from -40°C to 125°C.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

10.5 mm

2147483648 bit

DDR3L DRAM

8

1

1

78

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT40A512M16LY-062EAUT:E by Micron Technology

MT40A512M16LY-062EAUT:E

Micron Technology

Micron Technology's MT40A512M16LY-062EAUT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and automotive temperature grade. Suitable for applications requiring high memory density and fast data access in automotive electronics.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

13.5 mm

8589934592 bit

DDR4 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm

MT40A512M8RH-083EAUT:BTR by Micron Technology

MT40A512M8RH-083EAUT:BTR

Micron Technology

DDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

1200.4 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR4 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

8

1.14 V

1.26 V

1.14 V

1.2

YES

CMOS

AUTOMOTIVE

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT53B128M32D1DS-062AUT:A by Micron Technology

MT53B128M32D1DS-062AUT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1600 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

10 mm

MT53D512M32D2DS-053AUT:D by Micron Technology

MT53D512M32D2DS-053AUT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-053AUT:D is a 512MX32 LPDDR4 DRAM with 1.1V, -40 to 125 °C temp range, and 1866 MHz clock freq. Ideal for automotive applications due to its robust design and high memory density of 17.18 Gb.

1866 MHz

17179869184 bit

LPDDR4 DRAM

32

1

1

536870912 words

512M

125 Cel

-40 Cel

512MX32

1.1

CMOS

AUTOMOTIVE

MT53E768M32D4DT-053AUT:E by Micron Technology

MT53E768M32D4DT-053AUT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 125 Cel;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

125 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

10 mm

MT53E384M32D2DS-053AUT:E by Micron Technology

MT53E384M32D2DS-053AUT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.06 V;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

125 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

10 mm

MT53E384M32D2DS-046AUT:E by Micron Technology

MT53E384M32D2DS-046AUT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 12884901888 bit;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

125 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DT-046AUT:E by Micron Technology

MT53E768M32D4DT-046AUT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

125 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.8 mm

BOTTOM

10 mm