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1024 DRAM 8

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
TM124BBK32-80 by Texas Instruments

TM124BBK32-80

Texas Instruments

TM124BBK32-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in asynchronous mode with a max access time of 80 ns. Ideal for applications requiring fast page access and common I/O type in microelectronic assemblies.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

33554432 bit

FAST PAGE DRAM MODULE

32

1

1

72

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX32

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

NO

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

TM124BBK32S-80 by Texas Instruments

TM124BBK32S-80

Texas Instruments

TM124BBK32S-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in FAST PAGE access mode with an 80 ns max access time. Ideal for commercial applications requiring high-speed data storage and retrieval.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

33554432 bit

FAST PAGE DRAM MODULE

32

1

1

72

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX32

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

NO

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

SMJ44400-10HMM by Texas Instruments

SMJ44400-10HMM

Texas Instruments

SMJ44400-10HMM by Texas Instruments is a 1MX4 FAST PAGE DRAM with 1048576 words, operating at 5V. It features a max access time of 100ns, refresh cycles of 1024, and supports common I/O type. Ideal for military applications due to its MIL-STD screening levels and small outline package style.

FAST PAGE

100 ns

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

COMMON

R-CDSO-N20

17.78 mm

4194304 bit

FAST PAGE DRAM

4

1

1

20

1048576 words

1M

ASYNCHRONOUS

125 Cel

-55 Cel

1MX4

3-STATE

CERAMIC, METAL-SEALED COFIRED

SON

SOLCC20/26,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

38535Q/M;38534H;883B

2.337 mm

NO

.004 Amp

DRAMs

75 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

SMJ44400-80HMM by Texas Instruments

SMJ44400-80HMM

Texas Instruments

SMJ44400-80HMM by Texas Instruments is a 1MX4 FAST PAGE DRAM with 1048576 words, operating at 5V. It features a max access time of 80ns, refresh cycles of 1024, and military-grade temperature range. Ideal for applications requiring high-speed memory operations in harsh environments.

FAST PAGE

80 ns

RAS ONLY; CAS BEFORE RAS; HIDDEN REFRESH

COMMON

R-CDSO-N20

17.78 mm

4194304 bit

FAST PAGE DRAM

4

1

1

20

1048576 words

1M

ASYNCHRONOUS

125 Cel

-55 Cel

1MX4

3-STATE

CERAMIC, METAL-SEALED COFIRED

SON

SOLCC20/26,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

38535Q/M;38534H;883B

2.337 mm

NO

.004 Amp

DRAMs

85 mA

5.5 V

4.5 V

5

YES

CMOS

MILITARY

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

TMS44165-70DZ by Texas Instruments

TMS44165-70DZ

Texas Instruments

TMS44165-70DZ by Texas Instruments is a 256Kx16 DRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for applications requiring fast page access in commercial temperature grades.

FAST PAGE

70 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-PDSO-J40

26.035 mm

4194304 bit

FAST PAGE DRAM

16

1

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

3.76 mm

NO

.001 Amp

DRAMs

120 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

TM248NBK36R-80 by Texas Instruments

TM248NBK36R-80

Texas Instruments

TM248NBK36R-80 by Texas Instruments is a 2MX36 DRAM module with 75497472-bit memory density. It operates at 5V, has a memory width of 36, and offers fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

75497472 bit

FAST PAGE DRAM MODULE

36

1

1

72

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

.018 Amp

DRAMs

1440 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

TM4100EAD9-80 by Texas Instruments

TM4100EAD9-80

Texas Instruments

TM4100EAD9-80 by Texas Instruments is a 4MX9 DRAM module with 37748736-bit memory density. It operates asynchronously at 5V, featuring self-refresh capability and fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.

FAST PAGE

80 ns

AUTO/SELF REFRESH

COMMON

R-XSMA-N30

37748736 bit

FAST PAGE DRAM MODULE

9

1

1

30

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX9

3-STATE

UNSPECIFIED

SIMM

SIM30

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

20.447 mm

YES

.009 Amp

DRAMs

720 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

2.54 mm

SINGLE

TM4100GAD8-80 by Texas Instruments

TM4100GAD8-80

Texas Instruments

TM4100GAD8-80 by Texas Instruments is a 4MX8 DRAM module with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE access, and self-refresh capability. Ideal for applications requiring fast memory access and common I/O type in microelectronic assemblies.

FAST PAGE

80 ns

AUTO/SELF REFRESH

COMMON

R-XSMA-N30

33554432 bit

FAST PAGE DRAM MODULE

8

1

1

30

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX8

3-STATE

UNSPECIFIED

SIMM

SIM30

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

20.447 mm

YES

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

2.54 mm

SINGLE