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SIMM DRAM 5

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
TM124BBK32-80 by Texas Instruments

TM124BBK32-80

Texas Instruments

TM124BBK32-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in asynchronous mode with a max access time of 80 ns. Ideal for applications requiring fast page access and common I/O type in microelectronic assemblies.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

33554432 bit

FAST PAGE DRAM MODULE

32

1

1

72

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX32

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

NO

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

TM124BBK32S-80 by Texas Instruments

TM124BBK32S-80

Texas Instruments

TM124BBK32S-80 by Texas Instruments is a 1MX32 DRAM module with 1048576 words, 32-bit memory width, and 33554432 bit memory density. It operates in FAST PAGE access mode with an 80 ns max access time. Ideal for commercial applications requiring high-speed data storage and retrieval.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

33554432 bit

FAST PAGE DRAM MODULE

32

1

1

72

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX32

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

NO

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

TM248NBK36R-80 by Texas Instruments

TM248NBK36R-80

Texas Instruments

TM248NBK36R-80 by Texas Instruments is a 2MX36 DRAM module with 75497472-bit memory density. It operates at 5V, has a memory width of 36, and offers fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.

FAST PAGE

80 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-XSMA-N72

75497472 bit

FAST PAGE DRAM MODULE

36

1

1

72

2097152 words

2M

ASYNCHRONOUS

70 Cel

0 Cel

2MX36

3-STATE

UNSPECIFIED

SIMM

SSIM72

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

25.527 mm

.018 Amp

DRAMs

1440 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

SINGLE

TM4100EAD9-80 by Texas Instruments

TM4100EAD9-80

Texas Instruments

TM4100EAD9-80 by Texas Instruments is a 4MX9 DRAM module with 37748736-bit memory density. It operates asynchronously at 5V, featuring self-refresh capability and fast page access mode. Ideal for applications requiring high-speed data storage in commercial temperature environments.

FAST PAGE

80 ns

AUTO/SELF REFRESH

COMMON

R-XSMA-N30

37748736 bit

FAST PAGE DRAM MODULE

9

1

1

30

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX9

3-STATE

UNSPECIFIED

SIMM

SIM30

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

20.447 mm

YES

.009 Amp

DRAMs

720 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

2.54 mm

SINGLE

TM4100GAD8-80 by Texas Instruments

TM4100GAD8-80

Texas Instruments

TM4100GAD8-80 by Texas Instruments is a 4MX8 DRAM module with 3-STATE output, operating at 5V. It features ASYNCHRONOUS mode, FAST PAGE access, and self-refresh capability. Ideal for applications requiring fast memory access and common I/O type in microelectronic assemblies.

FAST PAGE

80 ns

AUTO/SELF REFRESH

COMMON

R-XSMA-N30

33554432 bit

FAST PAGE DRAM MODULE

8

1

1

30

4194304 words

4M

ASYNCHRONOUS

70 Cel

0 Cel

4MX8

3-STATE

UNSPECIFIED

SIMM

SIM30

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

Not Qualified

1024

20.447 mm

YES

.008 Amp

DRAMs

640 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

NO LEAD

2.54 mm

SINGLE