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66 DRAM 95

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT46V32M8TG-75Z:G by Micron Technology

MT46V32M8TG-75Z:G

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

268435456 bit

DDR1 DRAM

8

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

350 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M16TG-6T:A by Micron Technology

MT46V64M16TG-6T:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

1073741824 bit

DDR1 DRAM

16

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

535 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M16TG-75:A by Micron Technology

MT46V64M16TG-75:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

1073741824 bit

DDR1 DRAM

16

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

495 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8P-5B:D by Micron Technology

MT46V64M8P-5B:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-6T:D by Micron Technology

MT46V64M8P-6T:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-75:D by Micron Technology

MT46V64M8P-75:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-75IT:D by Micron Technology

MT46V64M8P-75IT:D

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8P-75L:D by Micron Technology

MT46V64M8P-75L:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8P-75Z:D by Micron Technology

MT46V64M8P-75Z:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8TG-75:D by Micron Technology

MT46V64M8TG-75:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8TG-75E:D by Micron Technology

MT46V64M8TG-75E:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8TG-75IT:D by Micron Technology

MT46V64M8TG-75IT:D

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V8M16P-75:D by Micron Technology

MT46V8M16P-75:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

134217728 bit

DDR1 DRAM

16

3

1

1

66

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

4096

1.2 mm

YES

2,4,8

.003 Amp

DRAMs

375 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V8M16TG-75:D by Micron Technology

MT46V8M16TG-75:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

134217728 bit

DDR1 DRAM

16

1

1

66

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

2.5

Not Qualified

4096

1.2 mm

YES

2,4,8

.003 Amp

DRAMs

375 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V16M8TG-75:D by Micron Technology

MT46V16M8TG-75:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

134217728 bit

DDR1 DRAM

8

1

1

66

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

2.5

Not Qualified

4096

1.2 mm

YES

2,4,8

.003 Amp

DRAMs

325 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V16M16P-6TL:F by Micron Technology

MT46V16M16P-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

16

1

1

66

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

440 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M8P-6TIT:G by Micron Technology

MT46V32M8P-6TIT:G

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

8

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

410 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8TG-75Z:D by Micron Technology

MT46V64M8TG-75Z:D

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16P-5B:F by Micron Technology

MT46V32M16P-5B:F

Micron Technology

Micron Technology's MT46V32M16P-5B:F is a DDR1 DRAM with 32MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring fast memory access and high data transfer rates in commercial-grade devices.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16P-6T:F by Micron Technology

MT46V32M16P-6T:F

Micron Technology

Micron Technology's MT46V32M16P-6T:F is a DDR1 DRAM with 32MX16 organization, operating at 166 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

3

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16P-6TIT:F by Micron Technology

MT46V32M16P-6TIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16P-6TL:F by Micron Technology

MT46V32M16P-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16P-6TLIT:F by Micron Technology

MT46V32M16P-6TLIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16TG-5B:F by Micron Technology

MT46V32M16TG-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

480 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16TG-6T:F by Micron Technology

MT46V32M16TG-6T:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16TG-6TIT:F by Micron Technology

MT46V32M16TG-6TIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-5B:F by Micron Technology

MT46V64M8P-5B:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-5BLIT:F by Micron Technology

MT46V64M8P-5BLIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

450 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8P-6T:F by Micron Technology

MT46V64M8P-6T:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-6TIT:F by Micron Technology

MT46V64M8P-6TIT:F

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-6TL:F by Micron Technology

MT46V64M8P-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8TG-6TL:F by Micron Technology

MT46V64M8TG-6TL:F

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.005 Amp

DRAMs

405 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V128M8P-6T:A by Micron Technology

MT46V128M8P-6T:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

8

3

1

1

66

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

525 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V256M4P-6T:A by Micron Technology

MT46V256M4P-6T:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

4

1

1

66

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

525 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M16P-6T:A by Micron Technology

MT46V64M16P-6T:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

16

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

535 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M16P-75:A by Micron Technology

MT46V64M16P-75:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

16

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

495 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V128M8P-6TIT:A by Micron Technology

MT46V128M8P-6TIT:A

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

8

1

1

66

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

525 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M16P-6TIT:A by Micron Technology

MT46V64M16P-6TIT:A

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

167 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

16

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

535 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

IS43R16320D-6TLI by Integrated Silicon Solution

IS43R16320D-6TLI

Integrated Silicon Solution

IS43R16320D-6TLI by Integrated Silicon Solution is a 32MX16 DDR1 DRAM with 166 MHz clock frequency. Operating at 2.5V, it offers a memory density of 536870912 bits for industrial applications. Featuring synchronous operation and self-refresh capability, this DRAM has a small outline package style ideal for common I/O types.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

3

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.025 Amp

DRAMs

370 mA

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V64M8P-5BAIT:J by Micron Technology

MT46V64M8P-5BAIT:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Self Refresh: YES;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

22.22 mm

536870912 bit

DDR1 DRAM

8

1

1

66

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16P-5BXIT:J by Micron Technology

MT46V32M16P-5BXIT:J

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V8M16P6TDTR by Micron Technology

MT46V8M16P6TDTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 2.7 V;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

22.22 mm

134217728 bit

DDR1 DRAM

16

1

1

66

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16P-5BAIT:J by Micron Technology

MT46V32M16P-5BAIT:J

Micron Technology

Micron Technology's MT46V32M16P-5BAIT:J is a DDR1 DRAM with 32MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access times in a compact small outline package.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V16M16P-6TIT:KTR by Micron Technology

MT46V16M16P-6TIT:KTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Access Time: .7 ns;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

16

1

1

66

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V16M16P-5BIT:MTR by Micron Technology

MT46V16M16P-5BIT:MTR

Micron Technology

Micron Technology's MT46V16M16P-5BIT:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for industrial applications requiring fast access times and reliable performance in a compact form factor.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

16

1

1

66

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V16M16P-5BXIT:M by Micron Technology

MT46V16M16P-5BXIT:M

Micron Technology

Micron Technology's MT46V16M16P-5BXIT:M is a DDR1 DRAM with 16MX16 organization, 268435456 bit memory density, and 0.7 ns max access time. It operates synchronously at 2.6V and features self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

22.22 mm

268435456 bit

DDR1 DRAM

16

1

1

66

16777216 words

16M

SYNCHRONOUS

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V16M16TG-6TIT:FTR by Micron Technology

MT46V16M16TG-6TIT:FTR

Micron Technology

Micron Technology's MT46V16M16TG-6TIT:FTR is a DDR1 DRAM with 16MX16 organization, operating at 2.5V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access time of 0.7 ns, and small outline thin profile package style.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e0

22.22 mm

268435456 bit

DDR1 DRAM

16

1

1

66

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

GULL WING

.65 mm

DUAL

30

10.16 mm