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ZENER DIODE Zener Diodes 1,738

Zener Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Maximum Knee Impedance Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Temperature Coefficient Maximum Voltage Tolerance Working Test Current
BZV55C3V6L0G by Taiwan Semiconductor

BZV55C3V6L0G

Taiwan Semiconductor

BZV55C3V6L0G by Taiwan Semiconductor is a Zener diode with a nominal reference voltage of 3.6 V and max power dissipation of 0.5 W. It operates at a max temperature of 175°C, has a working test current of 5 mA, and offers a max voltage tolerance of 5%. This single-configured diode is ideal for applications requiring precise voltage regulation in electronic circuits.

SINGLE

SILICON

ZENER DIODE

85 ohm

e3

1

1

175 Cel

.5 W

3.6 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C3V9L0G by Taiwan Semiconductor

BZV55C3V9L0G

Taiwan Semiconductor

BZV55C3V9L0G by Taiwan Semiconductor is a Zener diode with a nominal reference voltage of 3.9 V and max voltage tolerance of 5%. It operates at a max temperature of 175°C, has a dynamic impedance of 85 ohm, and can dissipate up to 0.5 W. This single-configured diode is suitable for applications requiring precise voltage regulation in electronic circuits.

SINGLE

SILICON

ZENER DIODE

85 ohm

e3

1

1

175 Cel

.5 W

3.9 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C4V3L0G by Taiwan Semiconductor

BZV55C4V3L0G

Taiwan Semiconductor

BZV55C4V3L0G by Taiwan Semiconductor is a Zener diode with a nominal reference voltage of 4.3 V and max power dissipation of 0.5 W. It operates at a max temperature of 175°C, has a working test current of 5 mA, and surface mount configuration making it suitable for various applications in electronics circuits requiring precise voltage regulation.

SINGLE

SILICON

ZENER DIODE

75 ohm

e3

1

1

175 Cel

.5 W

4.3 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C5V1L1G by Taiwan Semiconductor

BZV55C5V1L1G

Taiwan Semiconductor

BZV55C5V1L1G by Taiwan Semiconductor is a Zener diode with 5.1 V nominal reference voltage, 5 mA test current, and 35 ohm dynamic impedance. Ideal for applications requiring precise voltage regulation in electronics circuits due to its high power dissipation capability and low operating temperature of up to 175°C.

SINGLE

SILICON

ZENER DIODE

35 ohm

e3

1

1

175 Cel

.5 W

5.1 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C5V6L0G by Taiwan Semiconductor

BZV55C5V6L0G

Taiwan Semiconductor

BZV55C5V6L0G by Taiwan Semiconductor is a Zener diode with 5.6V nominal reference voltage, 5% max voltage tolerance, and 25 ohm max dynamic impedance. It operates at up to 175°C and has a max power dissipation of 0.5W. Ideal for applications requiring precise voltage regulation in compact electronic devices.

SINGLE

SILICON

ZENER DIODE

25 ohm

e3

1

1

175 Cel

.5 W

5.6 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C5V6L1G by Taiwan Semiconductor

BZV55C5V6L1G

Taiwan Semiconductor

BZV55C5V6L1G by Taiwan Semiconductor is a Zener diode with a nominal reference voltage of 5.6 V and max voltage tolerance of 5%. It operates at a max temperature of 175°C, has a working test current of 5 mA, and features surface mount configuration. This Zener diode is suitable for applications requiring precise voltage regulation in electronic circuits.

SINGLE

SILICON

ZENER DIODE

25 ohm

e3

1

1

175 Cel

.5 W

5.6 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C6V2L0G by Taiwan Semiconductor

BZV55C6V2L0G

Taiwan Semiconductor

BZV55C6V2L0G by Taiwan Semiconductor is a Zener diode with 6.2V nominal reference voltage, 5% max voltage tolerance, and 10 ohm max dynamic impedance. It is ideal for applications requiring precise voltage regulation in electronic circuits due to its high accuracy and low power dissipation capabilities.

SINGLE

SILICON

ZENER DIODE

10 ohm

e3

1

1

175 Cel

.5 W

6.2 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C6V2L1G by Taiwan Semiconductor

BZV55C6V2L1G

Taiwan Semiconductor

BZV55C6V2L1G by Taiwan Semiconductor is a Zener diode with 6.2V nominal reference voltage, 5% max voltage tolerance, and 10 ohm max dynamic impedance. Ideal for applications requiring precise voltage regulation in electronic circuits. It operates at up to 175°C and has a max power dissipation of 0.5W, making it suitable for various industrial and automotive electronics.

SINGLE

SILICON

ZENER DIODE

10 ohm

e3

1

1

175 Cel

.5 W

6.2 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C6V8L0G by Taiwan Semiconductor

BZV55C6V8L0G

Taiwan Semiconductor

BZV55C6V8L0G by Taiwan Semiconductor is a Zener diode with 6.8V nominal reference voltage, 5% max voltage tolerance, and 8 ohm max dynamic impedance. It operates at up to 175°C and has a power dissipation of 0.5W. Ideal for applications requiring precise voltage regulation in compact electronic devices.

SINGLE

SILICON

ZENER DIODE

8 ohm

e3

1

1

175 Cel

.5 W

6.8 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C6V8L1G by Taiwan Semiconductor

BZV55C6V8L1G

Taiwan Semiconductor

BZV55C6V8L1G by Taiwan Semiconductor is a Zener diode with a nominal reference voltage of 6.8 V and max power dissipation of 0.5 W. It operates at a max temperature of 175°C, with a dynamic impedance of 8 ohm and voltage tolerance of 5%. Ideal for applications requiring precise voltage regulation in electronic circuits.

SINGLE

SILICON

ZENER DIODE

8 ohm

e3

1

1

175 Cel

.5 W

6.8 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C7V5L0G by Taiwan Semiconductor

BZV55C7V5L0G

Taiwan Semiconductor

BZV55C7V5L0G by Taiwan Semiconductor is a Zener diode with a nominal reference voltage of 7.5 V and max power dissipation of 0.5 W. It operates at a max temperature of 175°C, has a dynamic impedance of 7 ohm, and works with a working test current of 5 mA. This single-configured diode is suitable for applications requiring precise voltage regulation in electronic circuits.

SINGLE

SILICON

ZENER DIODE

7 ohm

e3

1

1

175 Cel

.5 W

7.5 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C8V2L0G by Taiwan Semiconductor

BZV55C8V2L0G

Taiwan Semiconductor

BZV55C8V2L0G by Taiwan Semiconductor is a Zener diode with 8.2 V nominal reference voltage, 5% max voltage tolerance, and 7 ohm max dynamic impedance. It is ideal for applications requiring precise voltage regulation in electronic circuits, such as power supplies and voltage references.

SINGLE

SILICON

ZENER DIODE

7 ohm

e3

1

1

175 Cel

.5 W

8.2 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

BZV55C8V2L1G by Taiwan Semiconductor

BZV55C8V2L1G

Taiwan Semiconductor

BZV55C8V2L1G by Taiwan Semiconductor is a Zener diode with 8.2V nominal reference voltage, 5% max voltage tolerance, and 7 ohm max dynamic impedance. It is ideal for applications requiring precise voltage regulation in electronic circuits due to its high accuracy and low power dissipation capabilities.

SINGLE

SILICON

ZENER DIODE

7 ohm

e3

1

1

175 Cel

.5 W

8.2 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

5 %

5 mA

DZ23C18Q-7-F by Diodes Incorporated

DZ23C18Q-7-F

Diodes Incorporated

ZENER DIODE; Surface Mount: YES; Terminal Finish: MATTE TIN; Reference Standard: AEC-Q101; Maximum Dynamic Impedance: 50 ohm; Diode Element Material: SILICON;

SILICON

ZENER DIODE

50 ohm

e3

1

150 Cel

260

.3 W

AEC-Q101

18 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN

30

6.7 %

5 mA

BZX84B12Q-7-F by Diodes Incorporated

BZX84B12Q-7-F

Diodes Incorporated

ZENER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

SINGLE

SILICON

ZENER DIODE

25 ohm

.9 V

R-PDSO-G3

e3

150 ohm

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.35 W

AEC-Q101

12 V

.1 uA

8 V

YES

ZENER

MATTE TIN

GULL WING

DUAL

30

10 mV/Cel

2 %

5 mA

BZX84B22Q-7-F by Diodes Incorporated

BZX84B22Q-7-F

Diodes Incorporated

ZENER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

SINGLE

SILICON

ZENER DIODE

55 ohm

.9 V

R-PDSO-G3

e3

250 ohm

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.35 W

AEC-Q101

22 V

.1 uA

15.4 V

YES

ZENER

MATTE TIN

GULL WING

DUAL

30

20 mV/Cel

2 %

5 mA

BZX84B27Q-7-F by Diodes Incorporated

BZX84B27Q-7-F

Diodes Incorporated

ZENER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

SINGLE

SILICON

ZENER DIODE

80 ohm

.9 V

R-PDSO-G3

e3

300 ohm

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.35 W

AEC-Q101

27 V

.1 uA

18.9 V

YES

ZENER

MATTE TIN

GULL WING

DUAL

30

25.3 mV/Cel

2 %

2 mA

BZX84B2V7Q-7-F by Diodes Incorporated

BZX84B2V7Q-7-F

Diodes Incorporated

ZENER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

SINGLE

SILICON

ZENER DIODE

100 ohm

.9 V

R-PDSO-G3

e3

600 ohm

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.35 W

AEC-Q101

2.7 V

20 uA

1 V

YES

ZENER

MATTE TIN

GULL WING

DUAL

30

0 mV/Cel

2 %

5 mA

BZX84B3V9Q-7-F by Diodes Incorporated

BZX84B3V9Q-7-F

Diodes Incorporated

BZX84B3V9Q-7-F by Diodes Inc. is a Zener diode with 3.9V nominal reference voltage, 5mA working test current, and 2% max voltage tolerance. It is ideal for applications requiring precise voltage regulation in small outline packages, such as automotive electronics and industrial control systems.

HIGH RELIABILITY

SINGLE

SILICON

ZENER DIODE

90 ohm

.9 V

R-PDSO-G3

e3

600 ohm

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.35 W

AEC-Q101

3.9 V

3 uA

1 V

YES

ZENER

MATTE TIN

GULL WING

DUAL

30

0 mV/Cel

2 %

5 mA

BZX84B4V7Q-7-F by Diodes Incorporated

BZX84B4V7Q-7-F

Diodes Incorporated

BZX84B4V7Q-7-F by Diodes Inc. is a Zener diode with 4.7V nominal reference voltage, 5mA test current, and 3uA reverse current. It is ideal for applications requiring precise voltage regulation in compact electronic devices due to its small outline package and unidirectional polarity.

HIGH RELIABILITY

SINGLE

SILICON

ZENER DIODE

80 ohm

.9 V

R-PDSO-G3

e3

500 ohm

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.35 W

AEC-Q101

4.7 V

3 uA

2 V

YES

ZENER

MATTE TIN

GULL WING

DUAL

30

.2 mV/Cel

2 %

5 mA

BZX84B6V8-7-F by Diodes Incorporated

BZX84B6V8-7-F

Diodes Incorporated

ZENER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

ZENER DIODE

15 ohm

.9 V

R-PDSO-G3

e3

80 ohm

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.35 W

6.8 V

2 uA

4 V

YES

ZENER

MATTE TIN

GULL WING

DUAL

30

4.5 mV/Cel

2 %

5 mA

BZX84B9V1Q-7-F by Diodes Incorporated

BZX84B9V1Q-7-F

Diodes Incorporated

ZENER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

SINGLE

SILICON

ZENER DIODE

15 ohm

.9 V

R-PDSO-G3

e3

100 ohm

1

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.35 W

AEC-Q101

9.1 V

.5 uA

6 V

YES

ZENER

MATTE TIN

GULL WING

DUAL

30

7 mV/Cel

2 %

5 mA

MM3Z39VST1G by Onsemi

MM3Z39VST1G

Onsemi

MM3Z39VST1G by Onsemi is a Zener diode with a nominal reference voltage of 39V. It has a max operating temperature of 150°C and a max power dissipation of 0.3W. This diode is commonly used in applications requiring voltage regulation and protection against overvoltage.

SINGLE

SILICON

ZENER DIODE

130 ohm

R-PDSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.3 W

39 V

Voltage Reference Diodes

YES

ZENER

TIN

GULL WING

DUAL

30

2 %

2 mA

SZ-10N27VL by Sanken Electric

SZ-10N27VL

Sanken Electric

ZENER DIODE;

ZENER DIODE

BZT55C18L0G by Taiwan Semiconductor

BZT55C18L0G

Taiwan Semiconductor

BZT55C18L0G by Taiwan Semiconductor is a Zener diode with 18V nominal reference voltage, 5% max voltage tolerance, and 170 ohm max knee impedance. It is used in applications requiring precise voltage regulation such as power supplies and voltage references. This single-configured diode has a glass package body material and can operate b/w -65 to 175 °C.

ISOLATED

SINGLE

SILICON

ZENER DIODE

50 ohm

DO-213AA

O-LELF-R2

e3

170 ohm

1

1

2

175 Cel

-65 Cel

GLASS

ROUND

LONG FORM

260

UNIDIRECTIONAL

.5 W

18 V

.1 uA

13 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

WRAP AROUND

END

30

5 %

5 mA

BZT55C18L1G by Taiwan Semiconductor

BZT55C18L1G

Taiwan Semiconductor

BZT55C18L1G by Taiwan Semiconductor is a Zener diode with a nominal reference voltage of 18V. It has a max reverse current of 0.1uA and working test current of 5mA, making it suitable for voltage regulation applications. With a package body material of glass and matte tin over nickel terminal finish, this single-configured diode operates b/w -65 to 175 °C and has a max power dissipation of 0.5W.

ISOLATED

SINGLE

SILICON

ZENER DIODE

50 ohm

DO-213AA

O-LELF-R2

e3

170 ohm

1

1

2

175 Cel

-65 Cel

GLASS

ROUND

LONG FORM

260

UNIDIRECTIONAL

.5 W

18 V

.1 uA

13 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN OVER NICKEL

WRAP AROUND

END

30

5 %

5 mA

BZX79C12A0G by Taiwan Semiconductor

BZX79C12A0G

Taiwan Semiconductor

BZX79C12A0G by Taiwan Semiconductor is a Zener diode with a nominal reference voltage of 12V and max power dissipation of 0.5W. It operates at a max temperature of 175°C, with a working test current of 5mA and dynamic impedance of 25 ohm. This single-configured diode has a voltage tolerance of 5% and matte tin terminal finish, suitable for various electronic applications requiring precise voltage regulation.

SINGLE

SILICON

ZENER DIODE

25 ohm

e3

1

175 Cel

.5 W

12 V

Voltage Reference Diodes

NO

ZENER

MATTE TIN

5 %

5 mA

3EZ13D5RLG by Onsemi

3EZ13D5RLG

Onsemi

The Onsemi 3EZ13D5RLG is a Zener diode with a nominal reference voltage of 13V and max power dissipation of 1W. It operates in temperatures ranging from -65 °C to 200°C, making it suitable for various applications requiring precise voltage regulation. With a max voltage tolerance of 5%, this diode is ideal for use in electronic circuits where stable voltage levels are crucial.

ISOLATED

SINGLE

SILICON

ZENER DIODE

DO-41

O-PALF-W2

e3

1

2

200 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

UNIDIRECTIONAL

1 W

13 V

NO

ZENER

TIN

WIRE

AXIAL

5 %

58 mA

SMBJ5337BE3/TR13 by Microsemi

SMBJ5337BE3/TR13

Microsemi

Microsemi's SMBJ5337BE3/TR13 is a Zener diode with 4.7V nominal reference voltage and 5% max voltage tolerance. It operates b/w -65 to 150 °C, dissipating up to 1.38W power. Ideal for applications requiring precise voltage regulation in compact spaces due to its small outline package style and surface-mount capability.

TR, 7 INCH; 750

SINGLE

SILICON

ZENER DIODE

DO-214AA

R-PDSO-J2

e3

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

1.38 W

4.7 V

YES

ZENER

MATTE TIN

J BEND

DUAL

5 %

260 mA

BZD27C15P-E3-18 by Vishay Intertechnology

BZD27C15P-E3-18

Vishay Intertechnology

Vishay Intertechnology's BZD27C15P-E3-18 Zener Diode has a nominal reference voltage of 15V, working test current of 50mA, and max power dissipation of 0.8W. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

SINGLE

SILICON

ZENER DIODE

DO-219AB

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.8 W

AEC-Q101

15 V

YES

ZENER

Matte Tin (Sn)

FLAT

DUAL

30

6.12 %

50 mA

BZD27C200P-E3-18 by Vishay Intertechnology

BZD27C200P-E3-18

Vishay Intertechnology

Vishay Intertechnology's BZD27C200P-E3-18 Zener Diode has a nominal reference voltage of 200V, working test current of 5mA, and max power dissipation of 0.8W. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

SINGLE

SILICON

ZENER DIODE

DO-219AB

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.8 W

AEC-Q101

200 V

YES

ZENER

Matte Tin (Sn)

FLAT

DUAL

30

6 %

5 mA

BZD27C200P-HE3-18 by Vishay Intertechnology

BZD27C200P-HE3-18

Vishay Intertechnology

Vishay Intertechnology's BZD27C200P-HE3-18 Zener Diode has a nominal reference voltage of 200V, working test current of 5mA, and max power dissipation of 0.8W. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

SINGLE

SILICON

ZENER DIODE

DO-219AB

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.8 W

AEC-Q101

200 V

YES

ZENER

Matte Tin (Sn)

FLAT

DUAL

30

6 %

5 mA

BZD27C200P-M3-18 by Vishay Intertechnology

BZD27C200P-M3-18

Vishay Intertechnology

Vishay Intertechnology's BZD27C200P-M3-18 Zener Diode has a 200V nominal reference voltage, 5% max voltage tolerance, and 150°C max operating temp. Ideal for applications requiring precise voltage regulation in electronic circuits.

SINGLE

SILICON

ZENER DIODE

500 ohm

e3

1

1

150 Cel

260

2.3 W

200 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN

30

5 %

5 mA

BZD27C33P-E3-18 by Vishay Intertechnology

BZD27C33P-E3-18

Vishay Intertechnology

Vishay Intertechnology's BZD27C33P-E3-18 Zener Diode has a nominal reference voltage of 33V, working test current of 25mA, and max power dissipation of 0.8W. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 standard compliance.

SINGLE

SILICON

ZENER DIODE

DO-219AB

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.8 W

AEC-Q101

33 V

YES

ZENER

Matte Tin (Sn)

FLAT

DUAL

30

6.06 %

25 mA

BZD27C33P-HE3-18 by Vishay Intertechnology

BZD27C33P-HE3-18

Vishay Intertechnology

BZD27C33P-HE3-18 by Vishay Intertechnology is a Zener diode with a nominal reference voltage of 33V. It has a max power dissipation of 0.8W and can operate in temperatures ranging from -55°C to 150°C. This diode is commonly used in automotive applications due to its AEC-Q101 reference standard and unidirectional polarity.

SINGLE

SILICON

ZENER DIODE

DO-219AB

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.8 W

AEC-Q101

33 V

YES

ZENER

Matte Tin (Sn)

FLAT

DUAL

30

6.06 %

25 mA

BZD27C33P-M3-08 by Vishay Intertechnology

BZD27C33P-M3-08

Vishay Intertechnology

Vishay Intertechnology's BZD27C33P-M3-08 is a Zener diode with 33V nominal reference voltage, 5% max voltage tolerance, and 15 ohm max dynamic impedance. Ideal for applications requiring precise voltage regulation in electronics due to its high power dissipation of 2.3W and operating temperature up to 150°C.

SINGLE

SILICON

ZENER DIODE

15 ohm

e3

1

1

150 Cel

260

2.3 W

33 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN

30

5 %

25 mA

BZD27C33P-M3-18 by Vishay Intertechnology

BZD27C33P-M3-18

Vishay Intertechnology

Vishay Intertechnology's BZD27C33P-M3-18 Zener Diode has a nominal reference voltage of 33V, max power dissipation of 2.3W, and max operating temperature of 150°C. Ideal for applications requiring precise voltage regulation in electronic circuits with surface mount configurations.

SINGLE

SILICON

ZENER DIODE

15 ohm

e3

1

1

150 Cel

260

2.3 W

33 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN

30

5 %

25 mA

BZD27C51P-M3-08 by Vishay Intertechnology

BZD27C51P-M3-08

Vishay Intertechnology

Vishay Intertechnology's BZD27C51P-M3-08 Zener Diode has a 51V nominal reference voltage, 10mA test current, and 5% voltage tolerance. Ideal for applications requiring precise voltage regulation in electronics, telecommunications, and automotive industries.

SINGLE

SILICON

ZENER DIODE

60 ohm

e3

1

1

150 Cel

260

2.3 W

51 V

Voltage Reference Diodes

YES

ZENER

Matte Tin (Sn)

30

5 %

10 mA

BZD27C5V6P-HE3-18 by Vishay Intertechnology

BZD27C5V6P-HE3-18

Vishay Intertechnology

Vishay Intertechnology's BZD27C5V6P-HE3-18 Zener Diode has a nominal reference voltage of 5.6V, working test current of 100mA, and max voltage tolerance of 7.14%. Ideal for applications requiring precise voltage regulation in automotive electronics, consumer electronics, and industrial equipment.

SINGLE

SILICON

ZENER DIODE

DO-219AB

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.8 W

AEC-Q101

5.6 V

YES

ZENER

Matte Tin (Sn)

FLAT

DUAL

30

7.14 %

100 mA

BZD27C5V6P-M3-18 by Vishay Intertechnology

BZD27C5V6P-M3-18

Vishay Intertechnology

Vishay Intertechnology's BZD27C5V6P-M3-18 Zener Diode has a 5.6V nominal reference voltage, 100mA working test current, and 4 ohm max dynamic impedance. Ideal for applications requiring precise voltage regulation in electronic circuits with surface mount requirements.

SINGLE

SILICON

ZENER DIODE

4 ohm

e3

1

1

150 Cel

260

2.3 W

5.6 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN

30

5 %

100 mA

BZD27C7V5P-HE3-18 by Vishay Intertechnology

BZD27C7V5P-HE3-18

Vishay Intertechnology

Vishay Intertechnology's BZD27C7V5P-HE3-18 Zener Diode has a nominal reference voltage of 7.5V, working test current of 100mA, and max power dissipation of 0.8W. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 standard compliance and unidirectional polarity.

SINGLE

SILICON

ZENER DIODE

DO-219AB

R-PDSO-F2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.8 W

AEC-Q101

7.5 V

YES

ZENER

Matte Tin (Sn)

FLAT

DUAL

30

6.04 %

100 mA

BZD27C7V5P-M3-18 by Vishay Intertechnology

BZD27C7V5P-M3-18

Vishay Intertechnology

Vishay Intertechnology BZD27C7V5P-M3-18 Zener Diode has 7.5V nominal voltage, 100mA test current, and 2 ohm dynamic impedance. Ideal for applications requiring precise voltage regulation in electronic circuits with a max power dissipation of 2.3W and operating temperature up to 150°C.

SINGLE

SILICON

ZENER DIODE

2 ohm

e3

1

1

150 Cel

260

2.3 W

7.5 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN

30

5 %

100 mA

BZD27C9V1P-M3-08 by Vishay Intertechnology

BZD27C9V1P-M3-08

Vishay Intertechnology

Vishay Intertechnology's BZD27C9V1P-M3-08 Zener Diode has a nominal reference voltage of 9.1V, max power dissipation of 2.3W, and max operating temperature of 150°C. Ideal for applications requiring precise voltage regulation in electronic circuits with surface mount requirements.

SINGLE

SILICON

ZENER DIODE

4 ohm

e3

1

1

150 Cel

260

2.3 W

9.1 V

Voltage Reference Diodes

YES

ZENER

MATTE TIN

30

5 %

50 mA

1N5334BE3/TR13 by Microsemi

1N5334BE3/TR13

Microsemi

1N5334BE3/TR13 by Microsemi is a Zener diode with 3.6V nominal voltage, 5% tolerance, and 350mA test current. It operates b/w -65°C to 150°C, making it suitable for voltage regulation in various electronic circuits. The diode's isolated case connection and 5W power dissipation enhance its performance in demanding applications.

ISOLATED

SINGLE

SILICON

ZENER DIODE

DO-201AE

O-PALF-W2

e3

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

UNIDIRECTIONAL

5 W

3.6 V

NO

ZENER

MATTE TIN

WIRE

AXIAL

5 %

350 mA

1N5336BE3/TR13 by Microsemi

1N5336BE3/TR13

Microsemi

1N5336BE3/TR13 by Microsemi is a Zener diode with 4.3V nominal voltage and 5% tolerance. It operates b/w -65 to 150 °C, handles 290mA current, and dissipates up to 5W power. Widely used in applications requiring precise voltage regulation like power supplies and voltage references.

ISOLATED

SINGLE

SILICON

ZENER DIODE

DO-201AE

O-PALF-W2

e3

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

UNIDIRECTIONAL

5 W

4.3 V

NO

ZENER

MATTE TIN

WIRE

AXIAL

5 %

290 mA

1N5336CE3/TR13 by Microsemi

1N5336CE3/TR13

Microsemi

1N5336CE3/TR13 by Microsemi is a Zener diode with a nominal reference voltage of 4.3V and max power dissipation of 5W. It operates in temperatures ranging from -65°C to 150°C, making it suitable for applications requiring precise voltage regulation in various electronic circuits. With a working test current of 290mA and unidirectional polarity, this Zener diode is commonly used in power supplies, voltage regulators, and protection circuits.

ISOLATED

SINGLE

SILICON

ZENER DIODE

DO-201AE

O-PALF-W2

e3

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

UNIDIRECTIONAL

5 W

4.3 V

NO

ZENER

MATTE TIN

WIRE

AXIAL

2 %

290 mA

1N5363AE3/TR13 by Microsemi

1N5363AE3/TR13

Microsemi

1N5363AE3/TR13 by Microsemi is a Zener diode with 30V nominal reference voltage, 22.8V reverse test voltage, and 40mA working test current. It is used in applications requiring precise voltage regulation such as power supplies and voltage references due to its low dynamic impedance of 8 ohm. The diode operates b/w -65°C to 150°C temperature range with a max power dissipation of 5W.

ISOLATED

SINGLE

SILICON

ZENER DIODE

8 ohm

DO-201AE

O-PALF-W2

e3

140 ohm

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

UNIDIRECTIONAL

5 W

MIL-STD-750

30 V

.5 uA

22.8 V

NO

ZENER

MATTE TIN

WIRE

AXIAL

10 %

40 mA

BZT52C6V8LPQ-7 by Diodes Incorporated

BZT52C6V8LPQ-7

Diodes Incorporated

ZENER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

ZENER DIODE

15 ohm

R-PBCC-N2

e4

80 ohm

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

.25 W

AEC-Q101; IATF 16949

6.8 V

2 uA

4 V

YES

ZENER

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

4.5 mV/Cel

6.56 %

5 mA