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BZD27C33P-HE3-18

Vishay Intertechnology

BZD27C33P-HE3-18 by Vishay Intertechnology

BZD27C33P-HE3-18 by Vishay Intertechnology is a Zener diode with a nominal reference voltage of 33V. It has a max power dissipation of 0.8W and can operate in temperatures ranging from -55°C to 150°C. This diode is commonly used in automotive applications due to its AEC-Q101 reference standard and unidirectional polarity.

Median Price

-

Lifecycle Status

EOL

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3

In-Stock Inventory

1k+

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Vyrian

USA . 17,656 parts In-Stock

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VNN

France . 2,100 parts In-Stock

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2,100

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 707 parts In-Stock

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$2.010

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707

$2.010

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AZTECH Wire

Italy . 794 parts In-Stock

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$6.039

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794

$6.039

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Aranea Global

USA . 2,000 parts In-Stock

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Overview

Discover the BZD27C33P-HE3-18 by Vishay Intertechnology, a high-quality zener diode that delivers unrivaled performance. As a leading manufacturer in the industry, Vishay Intertechnology ensures superior reliability and durability for all its products. Zener diodes play a crucial role in regulating voltage, making them essential for a wide range of applications including power supplies, voltage regulators, and surge protection circuits. With its compact design and excellent thermal management capabilities, the BZD27C33P-HE3-18 offers exceptional value to customers. Experience enhanced efficiency, precise voltage regulation, and peace of mind knowing that your electronic devices are protected with Vishay Intertechnology's trusted technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures the Zener diode's durability and resistance to environmental conditions, making it a reliable choice for various applications.

Config: SINGLE

The single configuration allows for easy integration and installation, making it suitable for both DIY projects and professional applications.

Working Test Current: 25 mA

With a high working test current, this Zener diode can efficiently regulate voltage in electronic circuits, providing stable and accurate performance.

Surface Mount: YES

The surface mount capability simplifies the assembly process, enabling convenient integration onto circuit boards or other surfaces.

Package Shape: RECTANGULAR

The rectangular shape of the package facilitates easy handling and placement, ensuring compatibility with standard-sized PCBs and circuit layouts.

No. of Terminals: 2

The two-terminal configuration simplifies the circuit design and makes the Zener diode easy to connect in various electronic systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-saving installation, making it suitable for compact electronic devices and applications with limited space.

Maximum Voltage Tolerance: 6.06%

The high maximum voltage tolerance ensures reliable voltage regulation, allowing for consistent and precise electrical performance even under varying conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the Zener diode's resilience in demanding environments, making it suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range allows the Zener diode to function reliably even in extreme cold conditions, expanding its usability.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides excellent solderability, ensuring secure connections in manufacturing and assembly processes.

Terminal Position: DUAL

The dual terminal position offers flexibility in component placement and circuit design, enabling efficient utilization within various electrical setups.

Maximum Power Dissipation: 0.8 W

The high maximum power dissipation capabilities allow for robust performance, enabling the Zener diode to handle higher power loads effectively.

Maximum Time At Peak Reflow Temperature (s): 30

The 30-second maximum time at peak reflow temperature ensures safe and reliable soldering processes during assembly, reducing the risk of damage.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C guarantees efficient solder joint formation, contributing to the overall reliability of the Zener diode.

Reference Standard: AEC-Q101

Conforming to the AEC-Q101 reference standard ensures the Zener diode's quality and reliability, making it suitable for automotive and other high-performance applications.

Diode Type: ZENER DIODE

Being a Zener diode, this product provides precise and stable voltage regulation, making it ideal for applications requiring accurate voltage control.

Nominal Reference Voltage: 33 V

The nominal reference voltage of 33V indicates the specific voltage at which this Zener diode regulates, making it suitable for circuits that require such voltage levels.

Technology: ZENER

With Zener technology, this diode exhibits excellent voltage regulation characteristics, providing stability and reliability in voltage-sensitive circuitry.

Terminal Form: FLAT

The flat terminal form simplifies the connection process, ensuring secure and reliable electrical contact for optimal performance.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of this Zener diode enables it to regulate voltage in one direction while allowing current flow in the opposite direction, rendering it suitable for specific circuit requirements.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures reliability, efficient voltage regulation, and compatibility with various electronic systems.

Technical Specifications

Zener Diodes BZD27C33P-HE3-18 attributes and parameters. Explore more Zener Diodes devices from Vishay Intertechnology

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-219AB

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.8 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

33 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

6.06 %

Working Test Current:

25 mA

Trade Compliance

BZD27C33P-HE3-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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