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MM3Z39VST1G

Onsemi

MM3Z39VST1G by Onsemi

MM3Z39VST1G by Onsemi is a Zener diode with a nominal reference voltage of 39V. It has a max operating temperature of 150°C and a max power dissipation of 0.3W. This diode is commonly used in applications requiring voltage regulation and protection against overvoltage.

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A&K Electronics

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Bristol Electronics

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Digiode

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Ampacity Inc.

Singapore . 1,221 parts In-Stock

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AZTECH Wire

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Overview

Discover the MM3Z39VST1G by Onsemi, a high-quality Zener diode that offers countless advantages for your electronic projects. With Onsemi's renowned expertise in manufacturing, you can trust in the reliability and durability of this product. Designed for easy installation with its surface mount feature and small outline package style, it is perfect for a wide range of applications. Offering a nominal reference voltage of 39V and a maximum voltage tolerance of 2%, this Zener diode ensures precise and efficient performance. Experience the value, benefits, and advantages that the MM3Z39VST1G brings to your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection and durability, making the Zener Diode a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies the overall circuit design, ensuring straightforward integration and reducing complexity.

Working Test Current: 2 mA

With a suitable working test current, this Zener Diode achieves optimal performance within its specified range, enhancing its accuracy and efficiency.

Surface Mount: YES

Its surface mount capability allows for easy installation and space-saving design, making it suitable for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape offers compatibility with standard circuit layouts, promoting ease of placement and connectivity.

No. of Terminals: 2

With only two terminals, the Zener Diode is easy to handle and integrate into various electronic setups, simplifying the overall circuitry.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures efficient use of space, enabling the Zener Diode to be utilized in compact circuit designs.

Maximum Voltage Tolerance: 2%

The tight maximum voltage tolerance guarantees accurate voltage regulation, making this Zener Diode a reliable choice for precise applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the Zener Diode to withstand demanding conditions, ensuring consistent performance even in extreme environments.

Maximum Dynamic Impedance: 130 ohm

With a low dynamic impedance, this Zener Diode efficiently regulates voltage, reducing the impact of fluctuations and contributing to stable circuit operation.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range enables this Zener Diode to function reliably even in extremely cold environments, expanding its suitability across various applications.

Terminal Finish: TIN

The terminal finish with tin coating enhances solderability and protects against corrosion, ensuring a reliable electrical connection for the Zener Diode.

Terminal Position: DUAL

The dual terminal position facilitates easy connection and integration, providing versatility for circuit design and configuration.

Maximum Power Dissipation: 0.3 W

The high maximum power dissipation rating ensures this Zener Diode can handle significant power loads, providing robust performance in power-related applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature, this Zener Diode withstands the necessary reflow soldering process for efficient assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for proper soldering during assembly, ensuring strong and reliable connections.

Diode Type: ZENER DIODE

Being a Zener Diode, this product offers precise voltage regulation by maintaining a constant voltage regardless of load variations, making it suitable for voltage reference and protection circuits.

Nominal Reference Voltage: 39 V

The nominal reference voltage of 39 V ensures a stable and consistent voltage output, making it ideal for applications requiring a specific reference voltage.

Technology: ZENER

Utilizing Zener diode technology, this product delivers reliable and accurate voltage regulation, making it a preferred choice in a wide range of electronic systems.

Terminal Form: GULL WING

The gull wing terminal form provides reliable electrical connections and mechanical stability, enabling smooth integration into circuit layouts.

No. of Elements: 1

With a single diode element, this Zener Diode simplifies circuit design, reducing complexity and enhancing overall efficiency.

Moisture Sensitivity Level (MSL): 1

The moisture sensitivity level 1 ensures the Zener Diode can withstand various moisture conditions, guaranteeing long-term reliability in humid or damp environments.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of this Zener Diode allows for easy integration into circuitry, ensuring proper current flow and voltage regulation.

Diode Element Material: SILICON

The silicon diode element material provides excellent electrical characteristics, stability, and durability, enhancing the overall performance and longevity of the Zener Diode.

Technical Specifications

Zener Diodes MM3Z39VST1G attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

130 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Nominal Reference Voltage:

39 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

2 %

Working Test Current:

2 mA

Trade Compliance

MM3Z39VST1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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