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BZD27C33P-E3-18

Vishay Intertechnology

BZD27C33P-E3-18 by Vishay Intertechnology

Vishay Intertechnology's BZD27C33P-E3-18 Zener Diode has a nominal reference voltage of 33V, working test current of 25mA, and max power dissipation of 0.8W. Ideal for applications requiring precise voltage regulation in automotive electronics due to AEC-Q101 standard compliance.

Median Price

$0.082

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 19,910 parts In-Stock

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$0.082

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ComSIT Distribution GmbH

Germany . 20,000 parts In-Stock

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ComSIT USA

USA . 20,000 parts In-Stock

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Vyrian

USA . 18,066 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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VNN

France . 25 parts In-Stock

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25

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Ampacity Inc.

Singapore . 19,709 parts In-Stock

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Component Stockers USA

USA . 38,179 parts In-Stock

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$0.730

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AZTECH Wire

Italy . 588 parts In-Stock

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$17.220

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QUARKTWIN TECHNOLOGY LTD

USA . 10,947 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Looking for a reliable Zener diode for your electronic projects? Look no further than the BZD27C33P-E3-18 by Vishay Intertechnology. With a reputation for high quality components, Vishay's Zener diodes offer precision and reliability in various applications. Whether you're working on power supplies, voltage regulators, or signal conditioning circuits, this Zener diode provides consistent performance with a nominal reference voltage of 33V. Trust Vishay Intertechnology for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, ensuring a longer lifespan.

Working Test Current: 25 mA

The high working test current allows for reliable and stable performance in various applications.

Surface Mount: YES

Being surface mountable makes installation and PCB assembly easier and more efficient.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions without compromising performance.

Terminal Position: DUAL

The dual terminal position enhances flexibility and ease of connection in circuit design.

Maximum Power Dissipation: 0.8 W

The high maximum power dissipation ensures the diode can handle power surges without damage.

Nominal Reference Voltage: 33 V

The 33V nominal reference voltage is ideal for applications requiring a stable voltage reference.

Technical Specifications

Zener Diodes BZD27C33P-E3-18 attributes and parameters. Explore more Zener Diodes devices from Vishay Intertechnology

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-219AB

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.8 W

Reference Standard:

AEC-Q101

Nominal Reference Voltage:

33 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

6.06 %

Working Test Current:

25 mA

Trade Compliance

BZD27C33P-E3-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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