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DUAL Varactor Diodes 96

Varactor Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Variable Capacitance Diode Classification
BB171X by NXP Semiconductors

BB171X

NXP Semiconductors

BB171X by NXP Semiconductors is a single-config varactor diode with an abrupt variable capacitance classification. It operates in the very high frequency band and has a max reverse current of 0.01 uA. This diode is commonly used in applications requiring small outline packages and high operating temperatures up to 125 °C.

32 V

SINGLE

8.77 %

20.6

57 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

IEC-60134

32 V

.01 uA

30 V

YES

GULL WING

DUAL

ABRUPT

SMV1206-079LF by Skyworks Solutions

SMV1206-079LF

Skyworks Solutions

SMV1206-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 11.6pF capacitance, 22V breakdown voltage, and -55 to 125°C operating range. Ideal for RF applications in small outline packages requiring variable capacitance control.

22 V

SINGLE

8.62 %

4.45

11.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.25 W

Not Qualified

YES

FLAT

DUAL

NOT SPECIFIED

HYPERABRUPT

BB149,135 by NXP Semiconductors

BB149,135

NXP Semiconductors

BB149,135 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 18.75 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 30 V. Ideal for tuning circuits and RF applications, it comes in a compact surface mount package.

SINGLE

4 %

8.2

18.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB833E6327HTSA1 by Infineon Technologies

BB833E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

35 V

SINGLE

8.11 %

11

9.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

S BAND

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

TIN

GULL WING

DUAL

BB545E7904HTSA1 by Infineon Technologies

BB545E7904HTSA1

Infineon Technologies

Infineon's BB545E7904HTSA1 is a single varactor diode with 20pF capacitance, ideal for ultra high frequency applications. With a temperature range of -55 to 150°C, it features gull wing terminals and silicon element material. This surface mount diode has a small outline package shape and is suitable for RF tuning in various electronic devices.

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

TIN

GULL WING

DUAL

BB55502VH7902XTSA1 by Infineon Technologies

BB55502VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

30 V

SINGLE

6.67 %

6

18.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB555H7902XTSA1 by Infineon Technologies

BB555H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

30 V

SINGLE

6.67 %

6

18.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB56502VH7902XTSA1 by Infineon Technologies

BB56502VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB565H7902XTSA1 by Infineon Technologies

BB565H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB639CE7904HTSA1 by Infineon Technologies

BB639CE7904HTSA1

Infineon Technologies

Infineon's BB639CE7904HTSA1 is a single varactor diode with 39pF capacitance, 35V breakdown voltage, and 9.5 capacitance ratio. Ideal for very high frequency applications in small outline packages, operating b/w -55°C to 150°C.

35 V

SINGLE

7.01 %

9.5

39 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

TIN

GULL WING

DUAL

BB644E7904HTSA1 by Infineon Technologies

BB644E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

6.59 %

11

41.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

MATTE TIN

GULL WING

DUAL

BB659CH7902XTSA1 by Infineon Technologies

BB659CH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

35 V

SINGLE

7.01 %

9.5

39 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB659H7902XTSA1 by Infineon Technologies

BB659H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

30 V

SINGLE

5.26 %

9.8

38.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB66402VH7902XTSA1 by Infineon Technologies

BB66402VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

6.59 %

11

41.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB664H7902XTSA1 by Infineon Technologies

BB664H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

6.59 %

11

41.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB669E7904HTSA1 by Infineon Technologies

BB669E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 2%

SINGLE

9.33 %

14.5

56.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

BB68902VH7902XTSA1 by Infineon Technologies

BB68902VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 2%

SINGLE

9.33 %

14.5

56.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB689H7902XTSA1 by Infineon Technologies

BB689H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 2%

SINGLE

9.33 %

14.5

56.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

BB831E7904HTSA1 by Infineon Technologies

BB831E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 3%

SINGLE

11.36 %

7.8

8.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

L BAND

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

MATTE TIN

GULL WING

DUAL

BB857H7902XTSA1 by Infineon Technologies

BB857H7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

9.09 %

9.7

6.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

ABRUPT

BBY5202WH6327XTSA1 by Infineon Technologies

BBY5202WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

7 V

SINGLE

22.22 %

1.1

1.85 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

HYPERABRUPT

BBY5302WH6327XTSA1 by Infineon Technologies

BBY5302WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

SINGLE

9.43 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

HYPERABRUPT

BBY5502WH6327XTSA1 by Infineon Technologies

BBY5502WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

16 V

SINGLE

5.66 %

2

18.6 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

HYPERABRUPT

BBY5802WH6327XTSA1 by Infineon Technologies

BBY5802WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

SINGLE

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

FLAT

DUAL

HYPERABRUPT

BBY5803WE6327HTSA1 by Infineon Technologies

BBY5803WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

SINGLE

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY5805WH6327XTSA1 by Infineon Technologies

BBY5805WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

COMMON CATHODE, 2 ELEMENTS

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY5806WH6327XTSA1 by Infineon Technologies

BBY5806WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

COMMON ANODE, 2 ELEMENTS

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY6605WH6327XTSA1 by Infineon Technologies

BBY6605WH6327XTSA1

Infineon Technologies

Infineon's BBY6605WH6327XTSA1 is a varactor diode with common cathode, 2 elements. It has a nominal capacitance of 68.7 pF and min breakdown voltage of 12 V. Ideal for applications requiring hyperabrupt variable capacitance diodes in small outline packages.

HIGH Q

12 V

COMMON CATHODE, 2 ELEMENTS

4 %

5

68.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

TIN

GULL WING

DUAL

HYPERABRUPT

BBY57-02WE6327 by Infineon Technologies

BBY57-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

10 V

SINGLE

5.98 %

3

17.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

FLAT

DUAL

HYPERABRUPT

BB174LXYL by NXP Semiconductors

BB174LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

7.85 %

8.45

19.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

IEC-60134

30 V

Varactors

YES

NO LEAD

DUAL

ABRUPT

BB173LXYL by NXP Semiconductors

BB173LXYL

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

32 V

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

IEC-60134

32 V

Varactors

YES

NO LEAD

DUAL

ABRUPT

SMV1430-079LF by Skyworks Solutions

SMV1430-079LF

Skyworks Solutions

SMV1430-079LF by Skyworks Solutions is a single varactor diode with abrupt capacitance classification. It operates in the S band frequency range, offering a min quality factor of 3500 and nominal capacitance of 1.01 pF. Ideal for applications requiring precise tuning in RF circuits.

LOW NOISE

30 V

SINGLE

3.8

1.01 pF

SILICON

VARIABLE CAPACITANCE DIODE

S BAND

R-PDSO-F2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

3500

YES

MATTE TIN

FLAT

DUAL

ABRUPT

BBY56-02WE6327 by Infineon Technologies

BBY56-02WE6327

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

10 V

SINGLE

7.5 %

2.15

40 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

FLAT

DUAL

BB135,135 by NXP Semiconductors

BB135,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

8.9

19.25 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

30 V

.01 uA

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB141,115 by NXP Semiconductors

BB141,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.65

4.2 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

NOT APPLICABLE

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

BB143,115 by NXP Semiconductors

BB143,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

2.1

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

NOT APPLICABLE

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

BB145,115 by NXP Semiconductors

BB145,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

SINGLE

2

6.9 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-F2

e3

NOT APPLICABLE

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

YES

TIN

FLAT

DUAL

NOT SPECIFIED

BB148,135 by NXP Semiconductors

BB148,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

14.5

39.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

.01 uA

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB149,115 by NXP Semiconductors

BB149,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

4 %

8.2

18.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB149A,115 by NXP Semiconductors

BB149A,115

NXP Semiconductors

BB149A,115 by NXP Semiconductors is a varactor diode with a capacitance of 19.74 pF and breakdown voltage of 30 V. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as tuning circuits in RF communication systems. The diode comes in a small outline package with gull wing terminals, making it ideal for surface mount designs.

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

7.7 %

8.45

19.74 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB152,115 by NXP Semiconductors

BB152,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

8.77 %

20.6

57 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

GULL WING

DUAL

BB153,115 by NXP Semiconductors

BB153,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

32 V

Varactors

YES

TIN

GULL WING

DUAL

BB153,135 by NXP Semiconductors

BB153,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

32 V

Varactors

YES

TIN

GULL WING

DUAL

BB156,115 by NXP Semiconductors

BB156,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

10 %

2.7

16 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB156,135 by NXP Semiconductors

BB156,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

10 %

2.7

16 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

Tin (Sn)

GULL WING

DUAL

30

BB178,115 by NXP Semiconductors

BB178,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

32 V

Varactors

YES

TIN

FLAT

DUAL

BB178,135 by NXP Semiconductors

BB178,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

32 V

Varactors

YES

TIN

FLAT

DUAL

BB179,115 by NXP Semiconductors

BB179,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

8.45

19.74 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

FLAT

DUAL