Loading...

DUAL Transient Suppression Devices 2,252

Transient Suppression Devices
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
SMPC51ANHM3/H by Vishay Intertechnology

SMPC51ANHM3/H

Vishay Intertechnology

Vishay Intertechnology's SMPC51ANHM3/H is a single-config transient suppression device with 1500W power dissipation, ideal for protecting circuits. With a breakdown voltage of 59.7V and max clamping voltage of 82.4V, it ensures reliable performance in various applications. This AEC-Q101 compliant diode features avalanche technology and is suitable for automotive electronics due to its high reliability and wide operating temperature range from -55°C to 150°C.

EXCELLENT CLAMPING CAPABILITY

62.7 V

56.7 V

59.7 V

CATHODE

82.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

TO-277A

R-PDSO-F3

e3

1

1500 W

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1.25 W

AEC-Q101

51 V

1 uA

51 V

YES

AVALANCHE

Matte Tin (Sn)

FLAT

DUAL

30

SMBJ100AQ-13-F by Diodes Incorporated

SMBJ100AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY

128 V

111 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

AEC-Q101

100 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMBJ100CAQ-13-F by Diodes Incorporated

SMBJ100CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY

128 V

111 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

5 W

AEC-Q101

100 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMBJ12CAQ-13-F by Diodes Incorporated

SMBJ12CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY

15.3 V

13.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

5 W

AEC-Q101

12 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMBJ51AQ-13-F by Diodes Incorporated

SMBJ51AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY, EXCELLENT CLAMPING CAPABILITY

65.2 V

56.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

AEC-Q101

51 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMF4L12A-Q by Bourns

SMF4L12A-Q

Bourns

The Bourns SMF4L12A-Q is a single avalanche diode with 400W peak power dissipation, ideal for transient suppression in automotive applications. With a breakdown voltage range of 13.3V to 14.7V, it offers unidirectional protection at temperatures from -55°C to 150°C. AEC-Q101 compliant, this surface-mount device has a flat terminal finish and dual position for reliable performance.

14.7 V

13.3 V

14 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

AEC-Q101

12 V

1 uA

12 V

YES

AVALANCHE

TIN

FLAT

DUAL

SMF4L43A-Q by Bourns

SMF4L43A-Q

Bourns

Bourns SMF4L43A-Q is a unidirectional avalanche diode with 400W peak power dissipation, ideal for transient suppression in automotive applications. With a breakdown voltage range of 47.8V to 52.8V and AEC-Q101 compliance, it operates b/w -55°C to 150°C, making it suitable for harsh environments. This single-configured diode has a flat terminal finish and is surface mountable with two terminals.

52.8 V

47.8 V

50.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

AEC-Q101

43 V

1 uA

43 V

YES

AVALANCHE

TIN

FLAT

DUAL

D20V0S1U2LP20-7 by Diodes Incorporated

D20V0S1U2LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

22 V

37 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.2 V

S-PBCC-N2

1

4400 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

260

UNIDIRECTIONAL

.5 W

20 V

.2 uA

20 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

NUP1128WTT1G by Onsemi

NUP1128WTT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

35.5 V

27.5 V

31 V

55 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

1

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

165 W

IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

26.5 V

.1 uA

26.5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

NUP2128WTT1G by Onsemi

NUP2128WTT1G

Onsemi

NUP2128WTT1G by Onsemi is a Transient Suppression Device with 2 bidirectional elements. It has a breakdown voltage of 31V, clamping voltage of 55V, and can handle up to 165W power dissipation. Ideal for surge protection in automotive electronics due to its avalanche technology and compliance with IEC and ISO standards.

35.5 V

27.5 V

31 V

55 V

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G3

e3

1

165 W

2

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

165 W

IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

26.5 V

.1 uA

26.5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

SZNUPH1128HT1G by Onsemi

SZNUPH1128HT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

35.5 V

27.5 V

31 V

55 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

165 W

AEC-Q101; IEC-61000-4-2, 4-4, 4-5; ISO 7637-1, -3

26.5 V

.1 uA

26.5 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

30

DTVS20SP4UR-7 by Diodes Incorporated

DTVS20SP4UR-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

24.5 V

22.2 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-F2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1.5 W

20 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

D12V0S1U3LP20-7 by Diodes Incorporated

D12V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: SQUARE;

14.7 V

13.3 V

14 V

CATHODE

27.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PDSO-N3

e4

4000 W

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

UNIDIRECTIONAL

.5 W

IEC-61000-4-2

12 V

.2 uA

12 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

D18V0S1U3LP20-7 by Diodes Incorporated

D18V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: SQUARE;

22.1 V

20 V

21.05 V

CATHODE

33.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PDSO-N3

e4

4000 W

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

UNIDIRECTIONAL

.5 W

IEC-61000-4-2

18 V

.2 uA

18 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

D20V0S1U3LP20-7 by Diodes Incorporated

D20V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: SQUARE;

24.5 V

22.2 V

23.35 V

CATHODE

36.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PDSO-N3

e4

4000 W

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

UNIDIRECTIONAL

.5 W

IEC-61000-4-2

20 V

.2 uA

20 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

D26V0S1U3LP20-7 by Diodes Incorporated

D26V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: SQUARE;

31.9 V

28.9 V

30.4 V

CATHODE

50 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PDSO-N3

e4

4000 W

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

UNIDIRECTIONAL

.5 W

IEC-61000-4-2

26 V

.2 uA

26 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

PTVS26VU1UPA,147 by NXP Semiconductors

PTVS26VU1UPA,147

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: SQUARE;

IEC-61643-321

31.9 V

28.9 V

CATHODE

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PDSO-N3

3000 W

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

UNIDIRECTIONAL

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

26 V

YES

AVALANCHE

NO LEAD

DUAL

PUSB2X4Y,125 by NXP Semiconductors

PUSB2X4Y,125

NXP Semiconductors

PUSB2X4Y,125 by NXP Semiconductors is a single-config transient suppression device with 6 terminals. It operates b/w -40 to 85°C and has a breakdown voltage range of 6-9V. This diode type silicon device is ideal for protecting electronic circuits from voltage spikes in various applications.

ULTRA LOW CAPACITANCE

9 V

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

1

6

85 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

IEC-60134; IEC-61000-4-2, 4-5

5 V

YES

AVALANCHE

GULL WING

DUAL

NUP4114UCLW1T1G by Onsemi

NUP4114UCLW1T1G

Onsemi

NUP4114UCLW1T1G by Onsemi is a TRANS VOLTAGE SUPPRESSOR DIODE with 6.5V Breakdown Voltage, 1uA Reverse Current, and 10V Clamping Voltage. Ideal for transient suppression in electronics to protect against voltage spikes. Operates b/w -40°C to 125°C, complies with IEC-61000-4-2 standard, and features GULL WING terminals in a SMALL OUTLINE package.

ULTRA LOW CAPACITANCE

5.5 V

6.5 V

10 V

COMPLEX

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G6

5

6

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

IEC-61000-4-2

5.5 V

1 uA

5.5 V

YES

AVALANCHE

GULL WING

DUAL

10

DT1240-04LPQ-7 by Diodes Incorporated

DT1240-04LPQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 10; Surface Mount: YES; Package Shape: RECTANGULAR;

MIL-STD-202

6 V

11 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-N10

e4

60 W

1

10

85 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.35 W

AEC-Q101; IATF 16949; IEC-61000-4-2, 4-5

5.5 V

.5 uA

5 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SZNSP8818MUTAG by Onsemi

SZNSP8818MUTAG

Onsemi

SZNSP8818MUTAG by Onsemi is a transient suppression device with 8 common anode elements. It features a breakdown voltage of 3.5V, max reverse current of 0.5uA, and max clamping voltage of 15V. Ideal for applications requiring protection against voltage transients in automotive and industrial environments.

LOW CAPACITANCE

5 V

3.2 V

3.5 V

15 V

COMMON ANODE, 8 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.1 V

R-PDSO-N10

1

8

10

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-2, 4-5

3 V

.5 uA

3 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SZNSP8814MUTAG by Onsemi

SZNSP8814MUTAG

Onsemi

SZNSP8814MUTAG by Onsemi is a transient suppression device with 4 common anode elements. It has a breakdown voltage of 3.5V and max reverse current of 0.5uA, making it ideal for applications requiring protection against voltage spikes in electronic circuits. With a package style of small outline and surface mount capability, it offers reliable performance in a compact form factor.

LOW CAPACITANCE

5 V

3.2 V

3.5 V

15 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.1 V

R-PDSO-N8

1

4

8

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101; IEC-61000-4-2, 4-5

3 V

.5 uA

3 V

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

NSPM6201MUTBG by Onsemi

NSPM6201MUTBG

Onsemi

NSPM6201MUTBG by Onsemi is a single bidirectional transient suppression device with 20-27V breakdown voltage. It operates b/w -65 to 150 °C and has a max clamping voltage of 39V. Ideal for protecting electronic circuits from voltage spikes in various applications.

27 V

21 V

39 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PDSO-N3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

BIDIRECTIONAL

IEC-61000-4-2, 4-5

20 V

1 uA

20 V

YES

AVALANCHE

NO LEAD

DUAL

P4SMA180A-Q by Bourns

P4SMA180A-Q

Bourns

Bourns P4SMA180A-Q is a unidirectional Trans Voltage Suppressor Diode with 180V breakdown voltage, 400W peak reverse power dissipation, and 1uA max reverse current. Ideal for transient suppression in automotive applications due to AEC-Q101 standard compliance and avalanche technology.

189 V

171 V

180 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

DO-214AC

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101

154 V

1 uA

154 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

P4SMA200A-Q by Bourns

P4SMA200A-Q

Bourns

Bourns P4SMA200A-Q is a 400W Trans Voltage Suppressor Diode with 200V breakdown voltage. It operates b/w -55 to 150 °C and has a max reverse current of 1uA. Ideal for transient suppression in automotive applications meeting AEC-Q101 standards.

210 V

190 V

200 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

DO-214AC

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

AEC-Q101

171 V

1 uA

171 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMBJ70AQ-13-F by Diodes Incorporated

SMBJ70AQ-13-F

Diodes Incorporated

Diodes Inc. SMBJ70AQ-13-F is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 83.65V Breakdown Voltage, ideal for transient suppression applications. It operates b/w -55 to 150°C, has a max clamping voltage of 113V, and is AEC-Q101 & UL RECOGNIZED compliant.

EXCELLENT CLAMPING CAPABILITY

89.5 V

77.8 V

83.65 V

113 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

DO-214AA

R-PDSO-C2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

5 W

AEC-Q101; UL RECOGNIZED

70 V

5 uA

70 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

SMAJ70AQ-13-F by Diodes Incorporated

SMAJ70AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

86 V

77.8 V

81.9 V

113 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

70 V

5 uA

70 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMAJ43AQ-13-F by Diodes Incorporated

SMAJ43AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

52.8 V

47.8 V

50.3 V

69.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

43 V

5 uA

43 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMAJ13AQ-13-F by Diodes Incorporated

SMAJ13AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

15.9 V

14.4 V

15.15 V

21.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

13 V

5 uA

13 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMAJ13CAQ-13-F by Diodes Incorporated

SMAJ13CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

15.9 V

14.4 V

15.15 V

21.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

13 V

5 uA

13 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMAJ70CAQ-13-F by Diodes Incorporated

SMAJ70CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

86 V

77.8 V

81.9 V

113 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

70 V

5 uA

70 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMAJ78AQ-13-F by Diodes Incorporated

SMAJ78AQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

95.8 V

86.7 V

91.25 V

126 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

78 V

5 uA

78 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SMAJ78CAQ-13-F by Diodes Incorporated

SMAJ78CAQ-13-F

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

95.8 V

86.7 V

91.25 V

126 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

e3

1

400 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

BIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

78 V

5 uA

78 V

YES

AVALANCHE

MATTE TIN

C BEND

DUAL

30

SZMMBZ27VCWT3G by Onsemi

SZMMBZ27VCWT3G

Onsemi

SZMMBZ27VCWT3G by Onsemi is a Zener diode with 2 elements, common cathode configuration, and max breakdown voltage of 28.35V. It is used for transient suppression in automotive electronics due to its AEC-Q101 reference standard compliance and unidirectional polarity. With a small outline package style and gull wing terminal form, it operates b/w -55 °C to 150°C efficiently.

28.35 V

25.65 V

27 V

38 V

COMMON CATHODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.1 V

R-PDSO-G3

40 W

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

.2 W

AEC-Q101

22 V

.05 uA

22 V

YES

ZENER

GULL WING

DUAL

P6SMBJ51AS_R1_00001 by Panjit International

P6SMBJ51AS_R1_00001

Panjit International

P6SMBJ51AS_R1_00001 by Panjit Int. is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 59.7V Breakdown Voltage, ideal for transient suppression in electronics. It has a UNIDIRECTIONAL polarity, 82.4V Clamping Voltage, and operates b/w -55 to 150 °C, meeting IEC-61000-4-2 standards.

UL RECOGNIZED

62.7 V

56.7 V

59.7 V

82.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-C2

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

UNIDIRECTIONAL

5 W

IEC-61000-4-2; IEC-61249; MIL-STD-750

51 V

1 uA

51 V

YES

AVALANCHE

C BEND

DUAL

D12V0H1U2WSQ-7 by Diodes Incorporated

D12V0H1U2WSQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

15.75 V

13.3 V

14.525 V

24 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PDSO-G2

e3

600 W

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

.2 W

AEC-Q101; IATF 16949

12 V

.1 uA

12 V

YES

AVALANCHE

MATTE TIN

GULL WING

DUAL

P6SMAJ24ADFQ-13 by Diodes Incorporated

P6SMAJ24ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

30.7 V

26.7 V

28.7 V

38.9 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

24 V

1 uA

24 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ45ADFQ-13 by Diodes Incorporated

P6SMAJ45ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

57.5 V

50 V

53.75 V

72.7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

45 V

1 uA

45 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ85ADFQ-13 by Diodes Incorporated

P6SMAJ85ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

108.2 V

94.4 V

101.3 V

137 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

85 V

1 uA

85 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ20ADFQ-13 by Diodes Incorporated

P6SMAJ20ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

25.5 V

22.2 V

23.85 V

32.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

20 V

1 uA

20 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ22ADFQ-13 by Diodes Incorporated

P6SMAJ22ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

28 V

24.4 V

26.2 V

35.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

22 V

1 uA

22 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ28ADFQ-13 by Diodes Incorporated

P6SMAJ28ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

35.8 V

31.1 V

33.45 V

45.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

28 V

1 uA

28 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ30ADFQ-13 by Diodes Incorporated

P6SMAJ30ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

38.3 V

33.3 V

35.8 V

48.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

30 V

1 uA

30 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ33ADFQ-13 by Diodes Incorporated

P6SMAJ33ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

42.2 V

36.7 V

39.45 V

53.3 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

33 V

1 uA

33 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ36ADFQ-13 by Diodes Incorporated

P6SMAJ36ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

46 V

40 V

43 V

58.1 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

36 V

1 uA

36 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ43ADFQ-13 by Diodes Incorporated

P6SMAJ43ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

54.9 V

47.8 V

51.35 V

69.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

43 V

1 uA

43 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ48ADFQ-13 by Diodes Incorporated

P6SMAJ48ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

61.3 V

53.3 V

57.3 V

77.4 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

48 V

1 uA

48 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30

P6SMAJ58ADFQ-13 by Diodes Incorporated

P6SMAJ58ADFQ-13

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EXCELLENT CLAMPING CAPABILITY

74.6 V

64.4 V

69.5 V

93.6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-F2

e3

1

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

1 W

AEC-Q101; IATF 16949

58 V

1 uA

58 V

YES

AVALANCHE

MATTE TIN

FLAT

DUAL

30