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NO LEAD Bridge Rectifier Diodes 7

Bridge Rectifier Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
SBR2A40BLP-13 by Diodes Incorporated

SBR2A40BLP-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

40 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PBCC-N4

e3

1

70 A

4

1

4

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

AEC-Q101

40 V

YES

MATTE TIN

NO LEAD

BOTTOM

30

SDM1L30BLP-13 by Diodes Incorporated

SDM1L30BLP-13

Diodes Incorporated

SDM1L30BLP-13 by Diodes Inc. is a bridge rectifier diode with a max output current of 1A and a min breakdown voltage of 30V. It is surface mountable and commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.

HIGH RELIABILITY

30 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PBCC-N4

e3

1

50 A

4

1

4

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

AEC-Q101

30 V

YES

SCHOTTKY

MATTE TIN

NO LEAD

BOTTOM

30

NSR1030QMUTAG by Onsemi

NSR1030QMUTAG

Onsemi

NSR1030QMUTAG by Onsemi is a Bridge Rectifier Diode with 4 elements, Schottky technology, and 1A output current. It has a reverse test voltage of 30V and max power dissipation of 1.8W. Ideal for applications requiring fast reverse recovery time and low forward voltage drop in compact designs.

30 V

CATHODE

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.6 V

S-PDSO-N4

12 A

4

1

4

125 Cel

1 A

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

1.8 W

20 uA

.025 us

30 V

YES

SCHOTTKY

NO LEAD

DUAL

NOT SPECIFIED

NSR2030QMUTAG by Onsemi

NSR2030QMUTAG

Onsemi

NSR2030QMUTAG by Onsemi is a Schottky bridge rectifier diode with 4 elements, offering a max output current of 2A and forward voltage of 0.65V. With a reverse test voltage of 30V and fast recovery time of 0.034us, it is ideal for applications requiring efficient power conversion in compact electronic devices.

30 V

CATHODE

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.65 V

S-PDSO-N4

12.5 A

4

1

4

125 Cel

2 A

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

2.08 W

20 uA

.034 us

30 V

YES

SCHOTTKY

NO LEAD

DUAL

NOT SPECIFIED

DFBR030U3LP-13 by Diodes Incorporated

DFBR030U3LP-13

Diodes Incorporated

BRIDGE RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 8; Surface Mount: YES; Package Shape: SQUARE;

30 V

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.42 V

S-PDSO-N8

e4

1

20 A

4

1

8

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

1 W

IEC-61000-4-2

30 V

400 uA

30 V

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

CD-MBL208S by Bourns

CD-MBL208S

Bourns

CD-MBL208S by Bourns is a bridge rectifier diode with 4 elements, capable of handling up to 2A output current and 800V peak reverse voltage. It operates b/w -55°C to 175°C, making it suitable for various applications requiring reliable rectification in compact spaces.

LOW POWER LOSS

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

R-PDSO-N4

e3

1

50 A

4

1

4

175 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

800 V

YES

TIN

NO LEAD

DUAL

30

CBRDFSH1-100TR13 by Central Semiconductor

CBRDFSH1-100TR13

Central Semiconductor

CBRDFSH1-100TR13 by Central Semiconductor is a bridge rectifier diode with 4 elements, Schottky technology, and max output current of 1A. It operates b/w -55 to 125 °C and has a reverse test voltage of 100V. Ideal for applications requiring small outline package style and surface mount capability.

BRIDGE, 4 ELEMENTS

SILICON

BRIDGE RECTIFIER DIODE

.85 V

R-PDSO-N4

4

1

4

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

100 V

200 uA

100 V

YES

SCHOTTKY

NO LEAD

DUAL