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PHE13003C,126

Ween Semiconductors

PHE13003C,126 by Ween Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.1 W; Maximum Collector Current (IC): 1.5 A; Maximum Collector-Emitter Voltage: 400 V;

Median Price

$0.266

Lifecycle Status

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9

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1k+

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Rochester

USA . 10,000 parts In-Stock

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$0.070

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$0.070

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$0.070

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$0.070

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Mouser Electronics

USA . 3,498 parts In-Stock

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$0.450

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$0.175

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$0.105

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$0.070

3,498

$0.450

$0.175

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$0.070

DigiKey

USA . 10,091 parts In-Stock

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$0.480

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$0.185

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$0.123

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$0.083

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$0.480

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$0.083

Verical

USA . 5,000 parts In-Stock

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$0.082

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Digiode

USA . 3,088 parts In-Stock

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$0.069

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Vyrian

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Flip Electronics

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DigiKey Marketplace

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Anansix

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Ampacity Inc.

Singapore . 7,088 parts In-Stock

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$0.062

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Corphita

USA . 2,720 parts In-Stock

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$0.066

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Component Stockers USA

USA . 9,995 parts In-Stock

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$0.080

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$0.070

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$0.060

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Infinite Electronics LLP (Excess)

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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UNI Independent Distributors

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Kepictronics

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ChipstoGo Electronic ltd

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Technical Specifications

Power Bipolar Junction Transistors (BJT) PHE13003C,126 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Ween Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

Maximum Fall Time (tf):

700 ns

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

4700 ns

Maximum Turn On Time (ton):

1000 ns

Maximum VCEsat:

1.5 V

Trade Compliance

PHE13003C,126 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Ween Semiconductors

WeEn Semiconductors Co., Ltd was registered as a company on Aug 5, 2015. WeEn’s global footprint has an operational headquarters in Shanghai and wholly owned subsidiaries and centers in Jilin & Hongkong, north east China (Front-End Fabrication) Shanghai and Manchester, UK (Research & Development) , Dongguan(Warehouse and Distribution), and cities throughout the world (Sales Offices and Customer Service Access). In September 2018, WeEn added its new, in-house, reliability and failure analysis laboratory in Nanchang, Jiangxi Province, China. With a heritage of over 50 years in semiconductor development and manufacturing, WeEn as a key player has focused on developing a wide and deep portfolio of industry-leading power products including Silicon Carbide Power Devices, Silicon Controlled Rectifiers and Triacs, standard and fast recovery Power Diodes , TVS and ESD protection Devices and IGBTs and modules. All these products are widely used in the markets for telecommunications, computers, consumer electronics, intelligent home appliances, lighting, automotive and power management applications. WeEn seeks to help our customers achieve improved cost and production efficiency and contribute to the development of global intelligent manufacturing.

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