Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL;
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Power Field Effect Transistors (FET) SI4946EY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Siliconix
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JESD-30 Code:
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SI4946EY Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Vishay, through its Siliconix subsidiary, leads the industry in the development of power semiconductor products that improve the efficiency of power management circuitry in end products while reducing space requirements. As the world's number-one brand of low-voltage power MOSFETs (metal-oxide semiconductor field-effect transistors), Vishay Siliconix products play a key role in making handheld and portable electronic systems operate more efficiently from smaller and lighter battery packs. Higher-voltage Vishay Siliconix power MOSFETs are used for applications from electric motor control in industrial systems to converting power in the switches and routers that enable the world's communications networks. Vishay Siliconix power ICs address markets ranging from mobile communications and computing to the fixed telecom infrastructure and include switchmode regulators, linear regulators, and power management devices. A number of devices, built on specialized process flows, are purpose-made for the medical, automotive, and military markets. Vishay Siliconix milestones include the first analog switch, the first analog multiplexer, the first small-outline power MOSFET (LITTLE FOOT®), and the first power MOSFETs built on Trench technology (TrenchFET®). This tradition of innovation continues with new silicon technologies designed to maximize power MOSFET performance. In dc-to-dc conversion and load switching, Vishay Siliconix leads the market with high-density TrenchFET silicon processes and innovative package options for better thermal performance (PowerPAK®, PolarPAK®), smaller footprints (ChipFET®, MICRO FOOT®, PowerPAK SC-70, PowerPAK SC-75), and integration of multiple devices (PowerPAIR®). Vishay Siliconix power ICs focus on delivering the optimal and appropriate level of integration for power management and conversion. Recent innovations include the industry’s most powerful DrMOS solution for managing the core voltage in PCs, servers, and other CPU-based systems, and the new microBUCK™ dc-to-dc converter family, which combines the controller IC, MOSFETs, and bootstrap switch for a buck regulator in a tiny 4-mm2 package. The Vishay Siliconix product portfolio now also features high-voltage planar MOSFETs acquired from International Rectifier. Siliconix was founded in 1962. In 1998, Vishay acquired the Semiconductor Business Group of TEMIC, which included 80% of Siliconix. Vishay purchased the remaining 20% of Siliconix shares in 2005.
LM358MX
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMBJ18CA
Microsemi
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32H743BIT6
STMicroelectronics
STM32H743BIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, 208 terminals, and 1085440 bytes of RAM. It features 2 DAC channels, 32 ADC channels, and operates at a max clock frequency of 48 MHz. Ideal for industrial applications requiring high-speed processing and extensive peripheral connectivity.
1N4148WS
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WT
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
NC7WZ07P6X
Onsemi
The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.
NE555/D
General Electric Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;
PIC18F4550T-I/PT
Microchip Technology
The Microchip Technology PIC18F4550T-I/PT microcontroller operates at a max clock frequency of 48 MHz with 8-bit architecture. It features 13-Ch 10-Bit ADC channels and USB connectivity, making it suitable for industrial applications requiring high-speed data processing and analog-to-digital conversion. With low power mode and flash ROM programmability, this device offers efficient performance in compact designs.
Crimson Semiconductor
LM358DR2G
LM358DR2G by Onsemi is a dual operational amplifier with 7000uV max input offset voltage and 70dB nominal CMRR. Ideal for applications requiring low bias current such as sensor interfaces, signal conditioning circuits, and audio amplifiers. Package style: Small Outline, Technology: Bipolar, Unity Gain Bandwidth: 1000 kHz.
M39029/58-360
Conesys
CONNECTOR ACCESSORY; MIL Conformity: YES; Mating Contacts: M39029/57-354; Terminal Type: CRIMP; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT;
FDLL4148
FDLL4148 by Onsemi is a single rectifier diode with a max reverse recovery time of 0.004 us. With a max forward voltage of 1V and output current of 0.2A, it is ideal for applications requiring fast switching speeds in electronic circuits. The diode's glass package body material and isolated case connection make it suitable for surface mount designs operating at temperatures up to 175°C.
SS14
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0402FR-071KL
Yageo
The Yageo RC0402FR-071KL is a fixed resistor with a resistance of 1000 ohm and a tolerance of 1%. It is suitable for surface mount applications and has a max operating temperature of 155 °C.
RC0402FR-0710KL
Yageo's RC0402FR-0710KL is a 10000 ohm SMT fixed resistor with 1% tolerance, suitable for applications requiring a rated power dissipation of 0.0625 W. With a temperature coefficient of 100 ppm/°C, it operates b/w -55 to 155 °C, making it ideal for various electronic circuits.
Littelfuse
M24308/2-1F
Tyco Electronics Amp
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; IEC Conformity: NO; Mixed Contacts: NO; Empty Shell: NO;
STM32H753BIT6
STM32H753BIT6 by STMicroelectronics is a 32-bit microcontroller with 208 terminals, operating at up to 48 MHz. It features 20-Ch 16-Bit ADCs, 2-Ch 12-Bit DACs, and extensive peripherals for industrial applications like CAN, Ethernet, and USB connectivity. With a wide temperature range of -40 to +85 °C, it's ideal for demanding environments requiring high-speed processing capabilities.
LM555CM
Intersil
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
NTBG020N120SC1
NTBG020N120SC1 by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 98A, Avalanche Energy Rating of 264mJ, and Operating Temperature up to 175°C. This SINGLE configuration transistor has GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology in a RECTANGULAR package.
BSS123
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (ID): .17 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDMC86139P
FDMC86139P by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage and 30A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.067 ohm RDS(on), and operates in ENHANCEMENT MODE.
FDS6982AS_NL
Fairchild Semiconductor's FDS6982AS_NL is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 8.6A Max Drain Current. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.
FDD4685TF-SB82135
FDD4685TF-SB82135 by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 100A IDM, and 0.027 ohm RDS(ON). With ENHANCEMENT MODE operation, it has a max temp of 150°C and AEC-Q101 compliance.
IRF640NLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Pulsed Drain Current (IDM): 72 A; JEDEC-95 Code: TO-262AA;
FQP3P50
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; No. of Terminals: 3; Transistor Application: SWITCHING;
CSD18540Q5BT
Texas Instruments
CSD18540Q5BT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 400A IDM, and 0.0033 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it can handle temperatures from -55 to 175 °C.
2N7002
Telcom Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e0;
IRFP460APBF
Vishay Intertechnology
Vishay Intertechnology's IRFP460APBF is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a max power dissipation of 280W and operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Terminal Finish: MATTE TIN; Operating Mode: ENHANCEMENT MODE;
MRF151G
TE Connectivity
TE Connectivity's MRF151G is a N-CHANNEL FET with 40A ID and 500W power dissipation. Ideal for high-power applications, it operates in enhancement mode with a max temp of 150°C.
FDN5618P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
IRFH5010TRPBF
Infineon Technologies
The Infineon Technologies IRFH5010TRPBF is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 0.009 ohm RDS(on). Ideal for SWITCHING applications, it features a 400A IDM and 227mJ EAS. This SINGLE transistor in PLASTIC/EPOXY package operates in ENHANCEMENT MODE at up to 150°C.
SI7469DP-T1-E3
SI7469DP-T1-E3 by Vishay Intertechnology is a P-CHANNEL FET with 80V DS Breakdown Voltage, 40A IDM, and 0.025 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 83W.
NTF3055L108T1G
NTF3055L108T1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.12 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in enhancement mode, it has a max power dissipation of 2.1W and can withstand temperatures up to 175°C.
SI4532DY
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Pulsed Drain Current (IDM): 20 A; Package Body Material: PLASTIC/EPOXY;
IRFS7530TRL7PP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 375 W; No. of Elements: 1; JESD-609 Code: e3;
SCT2280KEC
ROHM
ROHM's SCT2280KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 35A pulsed drain current. With a max power dissipation of 108W and operating temperature of 175°C, it offers reliable performance in various industrial settings.
FDD4243-F085P
FDD4243-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 14A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and AEC-Q101 standard compliance, it ensures reliable performance in automotive electronics.
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SI4946BEY-T1-E3
Vishay Siliconix
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Maximum Drain-Source On Resistance: .041 ohm; JESD-30 Code: R-PDSO-G8;
Vishay Intertechnology's SI4946BEY-T1-E3 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 30A IDM, and 0.041 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages.
SI4946BEY-T1-GE3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .041 ohm;
Vishay Intertechnology's SI4946BEY-T1-GE3 is an N-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 30A and an avalanche energy rating of 7.2mJ. This transistor is suitable for applications requiring high power dissipation and fast switching times.
SI4936BDY-T1-E3
Vishay Intertechnology's SI4936BDY-T1-E3 is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 6.9A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 2.8W at 150°C temperature.
SI4946EY-T1-E3
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Maximum Drain Current (ID): 4.5 A; Maximum Drain Current (Abs) (ID): 4.5 A; Peak Reflow Temperature (C): NOT SPECIFIED;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 30 A; Minimum DS Breakdown Voltage: 60 V; Operating Mode: ENHANCEMENT MODE;
SI4946EY
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Finish: TIN LEAD; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): 4.5 A;
Temic Semiconductors
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 60 V;
Siliconix
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Maximum Operating Temperature: 175 Cel; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): 4.5 A;
SI4946EY-E3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 30 A; Moisture Sensitivity Level (MSL): 1; Package Style (Meter): SMALL OUTLINE;
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): 4.5 A;
SI4946EY-T1
SI4946EY-T1 by Vishay Intertechnology is an N-CHANNEL power FET with a max drain current of 4.5A and a max power dissipation of 2.4W. It is surface mountable and operates at a max temperature of 175°C. This FET is commonly used in power applications requiring high drain current capabilities.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN LEAD;
SI4943CDY-T1-GE3
Power Field-Effect Transistors; Terminal Finish: PURE MATTE TIN; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 8 A;
SI4925DY-T1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 30 V; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;
SI4948EY-T1-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SI4948EY-T1-GE3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
SI4948EY
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY;
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 30 A; No. of Elements: 2; Maximum Drain Current (ID): 3.1 A;
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