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SI4948EY

Temic Semiconductors

SI4948EY by Temic Semiconductors

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G8; Package Body Material: PLASTIC/EPOXY;

Median Price

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Lifecycle Status

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7

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1k+

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Vyrian

USA . 66,980 parts In-Stock

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North Shore Components

USA . 2,182 parts In-Stock

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Pegasus Components GmbH

Germany . 852 parts In-Stock

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Prism Electronics

USA . 382 parts In-Stock

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Odintec Ltd.

Israel . 290 parts In-Stock

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Microfarads

USA . 56 parts In-Stock

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Sea View Technologies

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Assy Fe

Spain . 5 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) SI4948EY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Temic Semiconductors

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

3.1 A

Maximum Drain-Source On Resistance:

.12 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

30 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

SI4948EY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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