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VS-VSKD16616PBF

Vishay Intertechnology

VS-VSKD16616PBF by Vishay Intertechnology

VS-VSKD16616PBF by Vishay Intertechnology is a series connected diode with 2 elements, max reverse current of 20mA. It's a rectifier diode with max forward voltage of 1.43V and output current of 165A. Ideal for high voltage power applications, operating b/w -40 to 150°C.

Median Price

$63.870

Lifecycle Status

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Mouser Electronics

USA . 16 parts In-Stock

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$63.870

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$55.000

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DigiKey

USA . 10 parts In-Stock

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$63.870

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$48.121

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Newark

USA . 8 parts In-Stock

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$65.440

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$58.930

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UK . 74 parts In-Stock

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$58.421

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Nova Conductors

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$57.590

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Vyrian

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Bristol Electronics

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AZTECH Wire

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$16.673

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Continental Prestige Electronics

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$57.590

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$56.438

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Netroflash

USA . 100 parts In-Stock

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$56.438

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$54.711

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$53.559

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$56.438

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$53.559

Ampacity Inc.

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Microchip USA

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$154.860

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$152.170

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$150.820

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$149.470

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$149.470

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Overview

Upgrade your high voltage power applications with the VS-VSKD16616PBF by Vishay Intertechnology. This series-connected, center tap diode offers superior quality and reliability, making it a top choice for demanding environments. With a maximum output current of 165 A and a maximum repetitive peak reverse voltage of 1600 V, this rectifier diode provides exceptional performance. Trust Vishay's expertise in diodes and rectifiers to deliver the power you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability in various operating conditions.

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

The series connected configuration with center tap and 2 elements provides efficient power handling capabilities.

Maximum Reverse Current: 20000 uA

With a high maximum reverse current rating, this diode is suitable for applications requiring high voltage and power.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into electronic circuits.

No. of Terminals: 3

Having 3 terminals provides flexibility in connecting the diode to external circuits.

Package Style (Meter): FLANGE MOUNT

The flange mount package style facilitates easy installation and maintenance in high voltage power applications.

Application: HIGH VOLTAGE POWER

Specifically designed for high voltage power applications, this diode ensures reliable and efficient performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature rating allows for reliable operation in extreme cold conditions.

Terminal Position: UPPER

The upper terminal position facilitates easy connection and ensures proper orientation in circuit layouts.

Case Connection: ISOLATED

The isolated case connection enhances safety and prevents electrical interference in the circuit.

Reference Standard: UL APPROVED

Being UL approved ensures that this diode meets stringent safety and quality standards for reliable operation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC to DC power in high voltage applications.

Maximum Forward Voltage (VF): 1.43 V

The low maximum forward voltage drop ensures minimal power loss and efficient energy conversion.

Maximum Output Current: 165 A

With a high maximum output current rating, this diode can handle substantial power loads effectively.

No. of Elements: 2

Having 2 elements allows for improved current handling capacity and overall performance of the diode.

Maximum Repetitive Peak Reverse Voltage: 1600 V

The high maximum repetitive peak reverse voltage rating makes this diode suitable for high voltage applications.

Maximum Non Repetitive Peak Forward Current: 4200 A

With a high maximum non repetitive peak forward current rating, this diode can handle surge currents effectively.

Diode Element Material: SILICON

Silicon diode element material offers excellent electrical properties and reliability for high voltage power applications.

Technical Specifications

Diodes & Rectifiers VS-VSKD16616PBF attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Application:

HIGH VOLTAGE POWER

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.43 V

JESD-30 Code:

R-PUFM-X3

Maximum Non Repetitive Peak Forward Current:

4200 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

165 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Reference Standard:

UL APPROVED

Maximum Repetitive Peak Reverse Voltage:

1600 V

Maximum Reverse Current:

20000 uA

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

VS-VSKD16616PBF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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