Loading...

VS-FC420SA10

Vishay Intertechnology

VS-FC420SA10 by Vishay Intertechnology

VS-FC420SA10 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage and 1130A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 652W. The transistor features a built-in diode, isolated case connection, and metal-oxide semiconductor technology.

Median Price

$20.830

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,293 parts In-Stock

1+ parts

$19.000

100+ parts

$16.450

1k+ parts

-

10k+ parts

-

2,293

$19.000

$16.450

-

-

DigiKey

USA . 7,309 parts In-Stock

1+ parts

$24.990

100+ parts

$16.604

1k+ parts

-

10k+ parts

-

7,309

$24.990

$16.604

-

-

Mouser Electronics

USA . 612 parts In-Stock

1+ parts

$28.000

100+ parts

$19.380

1k+ parts

-

10k+ parts

-

612

$28.000

$19.380

-

-

Newark

USA . 2,307 parts In-Stock

1+ parts

$34.560

100+ parts

$29.510

1k+ parts

-

10k+ parts

-

2,307

$34.560

$29.510

-

-

Element14

Singapore . 2,236 parts In-Stock

1+ parts

$1,978.740

100+ parts

$1,726.830

1k+ parts

-

10k+ parts

-

2,236

$1,978.740

$1,726.830

-

-

TTI

USA . 2,530 parts In-Stock

1+ parts

-

100+ parts

$16.680

1k+ parts

$15.490

10k+ parts

$15.180

2,530

-

$16.680

$15.490

$15.180

Arrow

USA . 160 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$18.659

10k+ parts

-

160

-

-

$18.659

-

TTI Europe

Germany . 160 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$18.686

10k+ parts

-

160

-

-

$18.686

-

Chip1Stop

Japan . 160 parts In-Stock

1+ parts

-

100+ parts

$21.200

1k+ parts

-

10k+ parts

-

160

-

$21.200

-

-

Verical

USA . 84 parts In-Stock

1+ parts

-

100+ parts

$20.460

1k+ parts

-

10k+ parts

-

84

-

$20.460

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$20.740

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$20.740

-

-

-

Maritex

Poland . 300 parts In-Stock

1+ parts

$31.921

100+ parts

$22.396

1k+ parts

-

10k+ parts

-

300

$31.921

$22.396

-

-

Vyrian

USA . 5,439 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,439

-

-

-

-

ComSIT Distribution GmbH

Germany . 213 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

213

-

-

-

-

IBS Electronics

USA . 34 parts In-Stock

1+ parts

-

100+ parts

$22.328

1k+ parts

-

10k+ parts

-

34

-

$22.328

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 292 parts In-Stock

1+ parts

$1.520

100+ parts

-

1k+ parts

-

10k+ parts

-

292

$1.520

-

-

-

Ampacity Inc.

Singapore . 1,796 parts In-Stock

1+ parts

$12.840

100+ parts

-

1k+ parts

-

10k+ parts

-

1,796

$12.840

-

-

-

Semicontronic

India . 1,147 parts In-Stock

1+ parts

$12.840

100+ parts

$12.519

1k+ parts

$12.455

10k+ parts

-

1,147

$12.840

$12.519

$12.455

-

Corohmni

South Africa . 404 parts In-Stock

1+ parts

$19.850

100+ parts

-

1k+ parts

-

10k+ parts

-

404

$19.850

-

-

-

Continental Prestige Electronics

USA . 1,114 parts In-Stock

1+ parts

$20.200

100+ parts

$18.240

1k+ parts

-

10k+ parts

-

1,114

$20.200

$18.240

-

-

Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$20.446

100+ parts

$19.423

1k+ parts

$19.423

10k+ parts

-

2,000

$20.446

$19.423

$19.423

-

Microchip USA

USA . 6,887 parts In-Stock

1+ parts

$54.648

100+ parts

-

1k+ parts

-

10k+ parts

-

6,887

$54.648

-

-

-

iodParts Technologies Inc.

India . 5,416 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,416

-

-

-

-

Argo Parts USA

USA . 3,662 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,662

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Robosynatics

Brazil . 116 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

116

-

-

-

-

Lucentia Tech

USA . 116 parts In-Stock

1+ parts

-

100+ parts

$19.453

1k+ parts

$19.056

10k+ parts

$19.056

116

-

$19.453

$19.056

$19.056

Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$20.325

1k+ parts

$19.703

10k+ parts

$19.288

50

-

$20.325

$19.703

$19.288

Overview

Discover the power and efficiency of Vishay Intertechnology's VS-FC420SA10 Power Field Effect Transistor. With a robust design and high-quality construction, this N-CHANNEL transistor offers enhanced performance for switching applications. This single configuration comes with a built-in diode, providing added convenience and versatility. Ideal for a wide range of uses, from industrial to automotive, this transistor delivers reliable operation and exceptional value. Upgrade your projects with Vishay Intertechnology's VS-FC420SA10 and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material makes the product lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have lower on-resistance and higher efficiency compared to P-Channel FETs, making them a good choice for power switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in protecting the circuit from voltage spikes and reverse current, enhancing the reliability of the product.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient control of power flow.

Minimum DS Breakdown Voltage: 100 V

With a minimum breakdown voltage of 100V, this FET can handle higher voltages, making it suitable for high-power applications.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation in various electronic systems.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to control and require less drive power, enhancing the efficiency of the product.

Maximum Pulsed Drain Current (IDM): 1130 A

The high maximum pulsed drain current rating allows for handling of large current spikes, making it suitable for demanding applications.

Avalanche Energy Rating (EAS): 11500 mJ

The high avalanche energy rating indicates the ability of the FET to withstand high-energy influxes, ensuring robust performance.

No. of Terminals: 4

Having 4 terminals allows for versatile connections and configurations, making it suitable for various circuit designs.

Maximum Power Dissipation: 652 W

With a high maximum power dissipation rating, the FET can handle high power levels without overheating, ensuring reliable operation.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure and stable mounting, suitable for rugged environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers high switching speeds and low power consumption, making it ideal for power switching applications.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature rating ensures stable performance even in high-temperature environments.

Transistor Element Material: SILICON

Silicon-based FETs offer high reliability and performance, making them a popular choice in power electronics.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature rating allows for operation in cold environments without compromising performance.

Maximum Drain Current (ID): 435 A

The high maximum drain current rating indicates the capability of handling large current flows, suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.00215 ohm

The low on-resistance of the FET results in minimal voltage drop and power loss, enhancing efficiency.

Terminal Position: UPPER

The terminal position at the upper side of the package allows for easy and convenient connections.

Case Connection: ISOLATED

The isolated case connection helps in preventing any interference or short circuits, ensuring safe operation.

Maximum Feedback Capacitance (Crss): 900 pF

The low feedback capacitance minimizes signal distortion and improves high-frequency performance, ideal for switching applications.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures that the product meets safety and quality standards, providing peace of mind to users.

Technical Specifications

Power Field Effect Transistors (FET) VS-FC420SA10 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

11500 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

435 A

Maximum Drain-Source On Resistance:

.00215 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

900 pF

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

1130 A

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

VS-FC420SA10 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 2