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SUM65N20-30

Vishay Intertechnology

SUM65N20-30 by Vishay Intertechnology

Vishay Intertechnology's SUM65N20-30 is a N-CHANNEL FET with 65A ID and 375W power dissipation. Ideal for high-power applications, it operates in enhancement mode at up to 175°C. Suitable for surface mount configurations, this MOSFET features Tin/Lead terminal finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip Stock

USA . 21,402 parts In-Stock

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Vyrian

USA . 1,616 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Cyclops Electronics Ltd

UK . 76 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 70 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 12 parts In-Stock

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Prism Electronics

USA . 10 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,050 parts In-Stock

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$0.860

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$0.860

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Corohmni

South Africa . 275 parts In-Stock

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$1.766

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$1.766

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AZTECH Wire

Italy . 728 parts In-Stock

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$11.907

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Semicontronic

India . 711 parts In-Stock

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$63.050

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$61.474

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$61.158

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Kepictronics

USA . 15,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,940 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Argo Parts USA

USA . 392 parts In-Stock

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Overview

Upgrade your power management system with the SUM65N20-30 by Vishay Intertechnology. Known for their high-quality components, Vishay delivers reliable solutions for power field effect transistors. This N-channel FET offers enhanced performance, with a maximum drain current of 65 A and a power dissipation of 375 W. Ideal for a range of applications, this surface-mount transistor operates in enhancement mode, ensuring efficient power flow. Trust Vishay Intertechnology for superior products that deliver value and performance every time.

Feature Benefit Bullets

Polarity or Channel Type

N-CHANNEL FETs are known for their high efficiency and fast switching speed, making this product suitable for applications where performance is crucial.

Configuration

The single configuration simplifies the design and makes it easy to use in various circuits without the complexity of multiple channels.

Surface Mount

Surface mount FETs are compact and allow for high-density mounting on a PCB, saving space and enabling efficient heat dissipation.

Operating Mode

Enhancement mode FETs can be easily controlled with a positive voltage, providing better control in various applications.

Maximum Drain Current (ID)

With a high maximum drain current, this FET can handle heavy loads and deliver high power output efficiently.

Maximum Power Dissipation

A high maximum power dissipation rating ensures that the FET can operate at high power levels without overheating, increasing its reliability.

Field Effect Transistor Technology

Metal-oxide semiconductor FETs offer good performance and high efficiency, making them suitable for a wide range of applications.

Maximum Operating Temperature

The high maximum operating temperature allows this FET to operate in harsh environments without performance degradation, increasing its reliability.

Terminal Finish

Tin/Lead terminal finish provides good solderability and ensures a reliable connection in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) SUM65N20-30 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

65 A

Maximum Drain Current (ID):

65 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

SUM65N20-30 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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