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SUM50020EL-GE3

Vishay Intertechnology

SUM50020EL-GE3 by Vishay Intertechnology

Vishay Intertechnology's SUM50020EL-GE3 is a N-channel power FET with 60V DS breakdown voltage, ideal for switching applications. Featuring a single configuration with built-in diode, it offers 120A max drain current and 0.0021 ohm max on resistance. This MOSFET in gull wing package is designed for enhancement mode operation in surface mount setups.

Median Price

$4.250

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8 parts In-Stock

1+ parts

$4.250

100+ parts

$2.140

1k+ parts

$1.630

10k+ parts

-

8

$4.250

$2.140

$1.630

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Element14

Singapore . 781 parts In-Stock

1+ parts

$4.380

100+ parts

$2.980

1k+ parts

$2.180

10k+ parts

-

781

$4.380

$2.980

$2.180

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Newark

USA . 556 parts In-Stock

1+ parts

$5.410

100+ parts

$3.120

1k+ parts

$2.470

10k+ parts

-

556

$5.410

$3.120

$2.470

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Verical

USA . 2,400 parts In-Stock

1+ parts

-

100+ parts

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$2.299

10k+ parts

$2.060

2,400

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-

$2.299

$2.060

Farnell

UK . 781 parts In-Stock

1+ parts

-

100+ parts

$1.660

1k+ parts

$1.310

10k+ parts

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781

-

$1.660

$1.310

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 69,350 parts In-Stock

1+ parts

$1.660

100+ parts

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69,350

$1.660

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Chip Stock

USA . 210 parts In-Stock

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210

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Elcom Components

USA . 95 parts In-Stock

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95

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 678 parts In-Stock

1+ parts

$0.647

100+ parts

-

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678

$0.647

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-

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Ampacity Inc.

Singapore . 670 parts In-Stock

1+ parts

$1.410

100+ parts

-

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670

$1.410

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Microchip USA

USA . 5,835 parts In-Stock

1+ parts

$12.462

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5,835

$12.462

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Argo Parts USA

USA . 5,227 parts In-Stock

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5,227

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Continental Prestige Electronics

USA . 2,778 parts In-Stock

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2,778

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Netroflash

USA . 1,000 parts In-Stock

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1,000

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Overview

Unleash the power of innovation with Vishay Intertechnology's SUM50020EL-GE3 Power Field Effect Transistor. Designed for switching applications, this N-channel transistor offers a seamless performance with its single configuration and built-in diode. Its high-quality manufacturing ensures reliability, while the low on-resistance guarantees efficiency. Ideal for a wide range of applications, from automotive to industrial, this transistor delivers optimal performance with a maximum pulsed drain current of 300 A. Elevate your projects with the cutting-edge technology of Vishay Intertechnology's SUM50020EL-GE3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides durability and protection for the FET, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-state resistance and higher current-carrying capability compared to P-channel FETs, making them ideal for high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection and simplifies circuit design, making this FET a convenient choice.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers high efficiency and fast switching speeds, making it suitable for power management in various systems.

Surface Mount: YES

Surface mount technology allows for easy and reliable PCB assembly, making this FET suitable for automated production processes.

Technical Specifications

Power Field Effect Transistors (FET) SUM50020EL-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

281 mJ

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

120 A

Maximum Drain-Source On Resistance:

.0021 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

300 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SUM50020EL-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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