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SUM45N25-58-E3

Vishay Intertechnology

SUM45N25-58-E3 by Vishay Intertechnology

Vishay Intertechnology's SUM45N25-58-E3 is a N-channel FET with 250V DS breakdown voltage, 45A max drain current, and 0.058 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount assembly.

Median Price

$4.929

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 800 parts In-Stock

1+ parts

$2.270

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-

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800

$2.270

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Arrow

USA . 2 parts In-Stock

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$2.469

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-

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2

$2.469

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Chip1Stop

Japan . 780 parts In-Stock

1+ parts

$3.546

100+ parts

$2.645

1k+ parts

$2.450

10k+ parts

-

780

$3.546

$2.645

$2.450

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Farnell

UK . 536 parts In-Stock

1+ parts

$5.520

100+ parts

$2.680

1k+ parts

$2.100

10k+ parts

-

536

$5.520

$2.680

$2.100

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DigiKey

USA . 428 parts In-Stock

1+ parts

$5.850

100+ parts

$2.818

1k+ parts

$2.262

10k+ parts

-

428

$5.850

$2.818

$2.262

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Element14

Singapore . 335 parts In-Stock

1+ parts

$6.180

100+ parts

$4.200

1k+ parts

$3.140

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335

$6.180

$4.200

$3.140

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RS (Exports)

UK . 1,600 parts In-Stock

1+ parts

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100+ parts

$3.968

1k+ parts

$3.421

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1,600

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$3.968

$3.421

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Future Electronics

Canada . 800 parts In-Stock

1+ parts

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100+ parts

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$5.210

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800

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$5.210

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Verical

USA . 800 parts In-Stock

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100+ parts

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1k+ parts

$4.929

10k+ parts

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800

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$4.929

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 98 parts In-Stock

1+ parts

$3.282

100+ parts

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98

$3.282

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NAC Semi

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$8.680

10k+ parts

$8.020

1,600

-

-

$8.680

$8.020

Chip Stock

USA . 925 parts In-Stock

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925

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Vyrian

USA . 873 parts In-Stock

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873

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IBS Electronics

USA . 800 parts In-Stock

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$7.545

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800

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$7.545

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 64 parts In-Stock

1+ parts

$0.832

100+ parts

$0.757

1k+ parts

$0.682

10k+ parts

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64

$0.832

$0.757

$0.682

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Aztec Data Supply Inc.

USA . 2,626 parts In-Stock

1+ parts

$0.980

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2,626

$0.980

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Semicontronic

India . 858 parts In-Stock

1+ parts

$1.850

100+ parts

$1.804

1k+ parts

$1.794

10k+ parts

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858

$1.850

$1.804

$1.794

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Ampacity Inc.

Singapore . 792 parts In-Stock

1+ parts

$1.850

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792

$1.850

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Continental Prestige Electronics

USA . 4,674 parts In-Stock

1+ parts

$3.090

100+ parts

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$3.028

4,674

$3.090

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$3.028

Argo Parts USA

USA . 1,812 parts In-Stock

1+ parts

$3.090

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1,812

$3.090

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Corohmni

South Africa . 12 parts In-Stock

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$3.120

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12

$3.120

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$3.282

100+ parts

$3.118

1k+ parts

$2.962

10k+ parts

$2.921

100

$3.282

$3.118

$2.962

$2.921

Microchip USA

USA . 3,283 parts In-Stock

1+ parts

$18.274

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3,283

$18.274

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kepictronics

USA . 5,300 parts In-Stock

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RC Electronics

USA . 1,602 parts In-Stock

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1,602

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Overview

Discover the power of innovation with Vishay Intertechnology's SUM45N25-58-E3 Power Field Effect Transistor. Designed for switching applications, this N-channel transistor offers unparalleled performance and reliability. With a maximum drain current of 45A and a low on-resistance of 0.058 ohm, this transistor maximizes efficiency while minimizing power loss. Perfect for a wide range of industrial and automotive applications, the SUM45N25-58-E3 delivers exceptional value and performance that will take your projects to the next level. Experience the difference with Vishay Intertechnology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package material provides good insulation and protection for the FET, making it durable and reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and efficiency compared to P-channel FETs, making this product a good choice for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for better control and protection in switching applications, making this FET a versatile and user-friendly choice.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers fast operation and efficient performance in various electronic circuits.

Maximum DS Breakdown Voltage: 250 V

With a high breakdown voltage, this FET can handle higher voltages safely, making it suitable for applications that require power handling capabilities.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in electronic circuits, providing convenience and versatility in design.

Maximum Drain Current (ID): 45 A

High maximum drain current capability allows for handling large amounts of current, making this FET suitable for high-power applications.

Maximum Power Dissipation (Abs): 375 W

With a high power dissipation rating, this FET can handle higher power levels without overheating, ensuring reliable performance in demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance and efficiency in FETs, making this product a reliable choice for various electronic applications.

Maximum Operating Temperature: 175 °C

High operating temperature tolerance allows this FET to operate efficiently in harsh environments or high-temperature conditions, expanding its range of applications.

Technical Specifications

Power Field Effect Transistors (FET) SUM45N25-58-E3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

250 V

Maximum Drain Current (Abs) (ID):

45 A

Maximum Drain Current (ID):

45 A

Maximum Drain-Source On Resistance:

.058 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

90 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SUM45N25-58-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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