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SMBG78AHE3/52

Vishay Intertechnology

SMBG78AHE3/52 by Vishay Intertechnology

Vishay Intertechnology's SMBG78AHE3/52 is a unidirectional Trans Voltage Suppressor Diode with 78V VRWM. It has a Pd of 600W, Vbr of 91.25V, and Vc of 126V. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and UL recognition.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,710 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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7,710

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Nova Conductors

Japan . 95 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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95

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,230 parts In-Stock

1+ parts

$0.010

100+ parts

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1k+ parts

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10k+ parts

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1,230

$0.010

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AZTECH Wire

Italy . 289 parts In-Stock

1+ parts

$14.434

100+ parts

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1k+ parts

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10k+ parts

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289

$14.434

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Bastille Electronics

Australia . 40 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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40

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Overview

Enhance the protection of your electronic devices with the Vishay Intertechnology SMBG78AHE3/52 Transient Suppression Device. Manufactured with top-quality materials, this single-configured device offers unmatched reliability and durability. Ideal for a wide range of applications, this diode provides maximum clamping voltage of 126V, ensuring your equipment stays safe from power surges. Trust in Vishay Intertechnology to deliver superior performance and peace of mind for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for a wide range of applications.

Config: SINGLE

The single configuration simplifies installation and reduces the risk of errors, making it user-friendly for both professionals and DIY enthusiasts.

Surface Mount: YES

The surface mount capability allows for easy and secure installation on circuit boards, saving space and reducing overall assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high peak power dissipation, this product offers superior protection against voltage surges and transients, ensuring reliable performance under extreme conditions.

Nominal Breakdown Voltage: 91.25 V

The nominal breakdown voltage provides precise protection against voltage spikes, safeguarding sensitive electronic components from potential damage.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient handling and placement within electronic devices, optimizing space utilization and enhancing overall design flexibility.

No. of Terminals: 2

The two terminals offer straightforward connectivity options, enabling quick and hassle-free integration into electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures compatibility with a variety of equipment and allows for versatile installation in tight spaces.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, improving overall reliability and longevity.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range allows for operation in extreme cold environments, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent conductivity and corrosion resistance, ensuring stable and consistent performance over time.

Terminal Position: DUAL

The dual terminal position offers flexibility in installation and connectivity options, accommodating various circuit layouts and designs.

Minimum Breakdown Voltage: 86.7 V

The minimum breakdown voltage specification ensures effective protection against voltage surges, enhancing the durability and lifespan of connected devices.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability simplifies the assembly process and ensures secure soldering, improving overall product reliability.

Maximum Breakdown Voltage: 95.8 V

The maximum breakdown voltage specification provides an additional safety margin, offering enhanced protection against sudden voltage spikes and transient events.

Reference Standard: AEC-Q101; UL RECOGNIZED

Compliant with industry standards like AEC-Q101 and UL recognized, this product meets stringent quality and safety requirements, guaranteeing reliable performance in various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a trans voltage suppressor diode, this product efficiently clamps overvoltage transients, safeguarding sensitive electronic components from potential damage.

Technology: AVALANCHE

The avalanche technology enhances the diode's capability to quickly respond to transient events, ensuring rapid and effective suppression of voltage surges.

Terminal Form: GULL WING

The gull wing terminal form offers a secure and stable connection, preventing accidental disconnection and ensuring uninterrupted operation.

Maximum Repetitive Peak Reverse Voltage: 78 V

The maximum repetitive peak reverse voltage specification provides consistent protection against voltage spikes, enhancing the reliability and durability of connected devices.

Polarity: UNIDIRECTIONAL

The unidirectional polarity design ensures reliable and consistent protection against voltage surges in one direction, maintaining the integrity of connected electronic components.

Maximum Clamping Voltage: 126 V

With a maximum clamping voltage of 126 V, this product effectively limits voltage spikes and transient currents, safeguarding sensitive circuitry from potential damage.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures excellent performance and reliability, offering consistent protection against voltage transients and surges.

Technical Specifications

Transient Suppression Devices SMBG78AHE3/52 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

95.8 V

Minimum Breakdown Voltage:

86.7 V

Nominal Breakdown Voltage:

91.25 V

Maximum Clamping Voltage:

126 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-215AA

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

78 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMBG78AHE3/52 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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