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SMBG6.0AHE3/52

Vishay Intertechnology

SMBG6.0AHE3/52 by Vishay Intertechnology

Vishay Intertechnology's SMBG6.0AHE3/52 is a unidirectional avalanche diode with a max clamping voltage of 10.3 V and a breakdown voltage of 7.02 V, suitable for transient suppression applications in electronics. With a peak power dissipation of 600 W, it operates within a wide temperature range from -55 to 150°C, making it ideal for various industrial and automotive uses.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 834 parts In-Stock

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834

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 13,213 parts In-Stock

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$0.103

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13,213

$0.103

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Corohmni

South Africa . 208 parts In-Stock

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$0.116

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208

$0.116

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Ampacity Inc.

Singapore . 347 parts In-Stock

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$3.010

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347

$3.010

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AZTECH Wire

Italy . 834 parts In-Stock

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$15.107

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834

$15.107

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Argo Parts USA

USA . 4,706 parts In-Stock

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Continental Prestige Electronics

USA . 884 parts In-Stock

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884

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Aranea Global

USA . 50 parts In-Stock

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Overview

Looking to protect your electronic devices from voltage surges? The Vishay Intertechnology SMBG6.0AHE3/52 is the answer! As a leader in transient suppression devices, Vishay Intertechnology guarantees top-notch quality and reliability. This product is perfect for a variety of applications, offering peace of mind and safeguarding your equipment. Don't compromise on protection - choose Vishay Intertechnology for unparalleled value and performance. Trust the experts and invest in the best with the SMBG6.0AHE3/52.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring long-lasting performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Can handle high power surges, protecting connected devices from damage.

Nominal Breakdown Voltage: 7.02 V

Provides effective voltage protection by conducting excess voltage away from sensitive components.

Maximum Operating Temperature: 150 °C

Operates effectively in high-temperature environments without compromising performance.

Terminal Finish: MATTE TIN

Ensures good electrical conductivity and corrosion resistance for reliable connections.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, offering superior protection against voltage spikes.

Technology: AVALANCHE

Utilizes avalanche breakdown for efficient voltage clamping and protection.

Maximum Clamping Voltage: 10.3 V

Limits the voltage spike to a safe level, preventing damage to connected devices.

Technical Specifications

Transient Suppression Devices SMBG6.0AHE3/52 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

7.37 V

Minimum Breakdown Voltage:

6.67 V

Nominal Breakdown Voltage:

7.02 V

Maximum Clamping Voltage:

10.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-215AA

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

6 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SMBG6.0AHE3/52 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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