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SMAJ160AHM3_A/I

Vishay Intertechnology

SMAJ160AHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SMAJ160AHM3_A/I is a unidirectional avalanche diode with 160V reverse voltage, 300W peak power dissipation, and 1uA reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and UL recognition. Package style is small outline with matte tin terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,439 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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7,439

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,462 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

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10k+ parts

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1,462

$0.010

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AZTECH Wire

Italy . 547 parts In-Stock

1+ parts

$6.482

100+ parts

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1k+ parts

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10k+ parts

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547

$6.482

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,000

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Overview

Enhance your electronic devices with Vishay Intertechnology's SMAJ160AHM3_A/I Transient Suppression Device. Designed for superior protection against voltage spikes, this product offers unmatched quality and reliability. Ideal for a variety of applications, this diode ensures your equipment operates smoothly without the risk of damage. Invest in peace of mind and safeguard your electronics with the industry-leading technology of Vishay Intertechnology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this product lightweight and durable.

Config: SINGLE

The single configuration simplifies installation and maintenance of the device.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting on PCBs.

Maximum Non Repetitive Peak Reverse Power Dissipation: 300 W

With a high peak power dissipation, this device can effectively handle transient surges and protect circuitry.

Nominal Breakdown Voltage: 187.5 V

The nominal breakdown voltage ensures reliable protection against voltage spikes.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal power loss and improved efficiency.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to integrate into circuit layouts.

Reverse Test Voltage: 160 V

The reverse test voltage rating confirms the device's ability to withstand reverse voltage.

No. of Terminals: 2

The two terminals provide simple connectivity and installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB.

Technical Specifications

Transient Suppression Devices SMAJ160AHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

197 V

Minimum Breakdown Voltage:

178 V

Nominal Breakdown Voltage:

187.5 V

Maximum Clamping Voltage:

259 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

300 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

3.3 W

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

160 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

160 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMAJ160AHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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