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SIHG20N50E-GE3

Vishay Intertechnology

SIHG20N50E-GE3 by Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1; Package Shape: RECTANGULAR;

Median Price

$1.650

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 388 parts In-Stock

1+ parts

$3.610

100+ parts

$1.670

1k+ parts

$1.470

10k+ parts

-

388

$3.610

$1.670

$1.470

-

DigiKey

USA . 442 parts In-Stock

1+ parts

$3.630

100+ parts

$2.107

1k+ parts

$1.562

10k+ parts

$1.522

442

$3.630

$2.107

$1.562

$1.522

TTI

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$1.650

1k+ parts

$1.470

10k+ parts

$1.440

2,000

-

$1.650

$1.470

$1.440

Arrow

USA . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.553

10k+ parts

$1.494

300

-

-

$1.553

$1.494

Verical

USA . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.555

10k+ parts

$1.496

300

-

-

$1.555

$1.496

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,712 parts In-Stock

1+ parts

$0.386

100+ parts

-

1k+ parts

-

10k+ parts

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5,712

$0.386

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 696 parts In-Stock

1+ parts

$0.328

100+ parts

-

1k+ parts

-

10k+ parts

-

696

$0.328

-

-

-

Component Stockers USA

USA . 1,729 parts In-Stock

1+ parts

$1.370

100+ parts

$2.060

1k+ parts

-

10k+ parts

-

1,729

$1.370

$2.060

-

-

Microchip USA

USA . 409 parts In-Stock

1+ parts

$21.320

100+ parts

-

1k+ parts

-

10k+ parts

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409

$21.320

-

-

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,500

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Perfect Parts

USA . 140 parts In-Stock

1+ parts

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100+ parts

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140

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Eastek

USA . 100 parts In-Stock

1+ parts

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100+ parts

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100

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Technical Specifications

Power Field Effect Transistors (FET) SIHG20N50E-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

204 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

19 A

Maximum Drain-Source On Resistance:

.184 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

42 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SIHG20N50E-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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