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SIHB24N65EF-GE3

Vishay Intertechnology

SIHB24N65EF-GE3 by Vishay Intertechnology

SIHB24N65EF-GE3 by Vishay Intertechnology is a N-channel FET with 650V DS breakdown voltage and 24A max drain current. Ideal for switching applications, it features a built-in diode, 156mΩ max on resistance, and operates in enhancement mode. Perfect for high-power electronics requiring efficient power management.

Median Price

$6.398

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 839 parts In-Stock

1+ parts

$5.780

100+ parts

$3.930

1k+ parts

$2.980

10k+ parts

$2.810

839

$5.780

$3.930

$2.980

$2.810

Element14

Singapore . 725 parts In-Stock

1+ parts

$6.164

100+ parts

$3.958

1k+ parts

$3.213

10k+ parts

-

725

$6.164

$3.958

$3.213

-

Farnell

UK . 725 parts In-Stock

1+ parts

$6.632

100+ parts

$3.855

1k+ parts

$3.245

10k+ parts

-

725

$6.632

$3.855

$3.245

-

Newark

USA . 715 parts In-Stock

1+ parts

$7.490

100+ parts

$5.640

1k+ parts

$4.640

10k+ parts

-

715

$7.490

$5.640

$4.640

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 92,629 parts In-Stock

1+ parts

$5.780

100+ parts

-

1k+ parts

-

10k+ parts

-

92,629

$5.780

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-

-

Bristol Electronics

USA . 146 parts In-Stock

1+ parts

-

100+ parts

$2.300

1k+ parts

$2.135

10k+ parts

-

146

-

$2.300

$2.135

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 515 parts In-Stock

1+ parts

$4.530

100+ parts

$4.417

1k+ parts

$4.394

10k+ parts

-

515

$4.530

$4.417

$4.394

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Microchip USA

USA . 323 parts In-Stock

1+ parts

$16.828

100+ parts

-

1k+ parts

-

10k+ parts

-

323

$16.828

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 15,425 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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15,425

-

-

-

-

iodParts Technologies Inc.

India . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,000

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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2,000

-

-

-

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Perfect Parts

USA . 112 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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112

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Overview

Unleash the power of technology with Vishay Intertechnology's SIHB24N65EF-GE3 Power Field Effect Transistor. Designed for high-performance switching applications, this N-channel transistor offers unparalleled reliability and efficiency. With a minimum DS breakdown voltage of 650V and a maximum pulsed drain current of 65A, this transistor delivers superior performance in a compact package. Whether you're looking to optimize your power management systems or enhance your electronic devices, the SIHB24N65EF-GE3 is the perfect solution. Upgrade your technology with Vishay Intertechnology today and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for applications where weight and durability are important factors.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance and lower on-resistance compared to P-channel FETs, making them a preferred choice for high efficiency applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and saves space, making this FET a convenient choice for applications where space is limited.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in various electronic systems.

Surface Mount: YES

Being surface mountable allows for easy and convenient mounting on PCBs, making it suitable for automated assembly processes.

Minimum DS Breakdown Voltage: 650 V

With a high breakdown voltage, this FET can handle high voltages without breakdown, making it suitable for high-power applications.

Package Shape: RECTANGULAR

Rectangular shape provides a standardized form factor for easy integration into existing designs and PCB layouts.

Transistor Element Material: SILICON

Silicon material offers good thermal conductivity and high temperature tolerance, ensuring reliable performance in demanding environments.

Maximum Drain Current (ID): 24 A

Capable of handling high current levels, making it suitable for power applications that require high current capabilities.

Maximum Drain-Source On Resistance: 0.156 ohm

Low on-resistance minimizes power loss and improves efficiency, making this FET suitable for high-performance applications.

Technical Specifications

Power Field Effect Transistors (FET) SIHB24N65EF-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

691 mJ

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

24 A

Maximum Drain-Source On Resistance:

.156 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

65 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SIHB24N65EF-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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