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SI7922DN-T1-GE3

Vishay Intertechnology

SI7922DN-T1-GE3 by Vishay Intertechnology

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.6 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;

Median Price

$0.934

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,275 parts In-Stock

1+ parts

$0.934

100+ parts

$0.802

1k+ parts

$0.731

10k+ parts

$0.731

2,275

$0.934

$0.802

$0.731

$0.731

Mouser Electronics

USA . 5,227 parts In-Stock

1+ parts

$1.190

100+ parts

$0.790

1k+ parts

$0.713

10k+ parts

$0.712

5,227

$1.190

$0.790

$0.713

$0.712

Chip1Stop

Japan . 2,275 parts In-Stock

1+ parts

$1.290

100+ parts

-

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-

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-

2,275

$1.290

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-

-

TTI

USA . 159,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.713

159,000

-

-

-

$0.713

DigiKey

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

$0.713

42,000

-

-

-

$0.713

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.680

3,000

-

-

-

$0.680

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.008

3,000

-

-

-

$1.008

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 67,091 parts In-Stock

1+ parts

$0.713

100+ parts

-

1k+ parts

-

10k+ parts

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67,091

$0.713

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$1.060

6,000

-

-

-

$1.060

Sensible Micro Corp

USA . 2,640 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,640

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NexGen Digital

USA . 31 parts In-Stock

1+ parts

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31

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 6,822 parts In-Stock

1+ parts

$5.252

100+ parts

-

1k+ parts

-

10k+ parts

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6,822

$5.252

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-

Technical Specifications

Power Field Effect Transistors (FET) SI7922DN-T1-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

1.25 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

1.8 A

Maximum Drain Current (ID):

1.8 A

Maximum Drain-Source On Resistance:

.195 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-XDSO-C6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

10 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

Pure Matte Tin (Sn) - annealed

Terminal Form:

C BEND

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI7922DN-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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