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SI3459BDV-T1-BE3

Vishay Intertechnology

SI3459BDV-T1-BE3 by Vishay Intertechnology

SI3459BDV-T1-BE3 by Vishay Intertechnology is a P-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 2.9A Drain Current, and 0.216 ohm On Resistance. With ENHANCEMENT MODE operation and GULL WING terminals, it's ideal for high-power switching circuits in various electronic devices.

Median Price

$0.602

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 123,376 parts In-Stock

1+ parts

$0.940

100+ parts

$0.478

1k+ parts

$0.320

10k+ parts

$0.272

123,376

$0.940

$0.478

$0.320

$0.272

DigiKey

USA . 1,269 parts In-Stock

1+ parts

$1.210

100+ parts

$0.501

1k+ parts

$0.353

10k+ parts

-

1,269

$1.210

$0.501

$0.353

-

TTI

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.263

33,000

-

-

-

$0.263

Avnet

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.247

12,000

-

-

-

$0.247

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 83,062 parts In-Stock

1+ parts

$0.263

100+ parts

-

1k+ parts

-

10k+ parts

-

83,062

$0.263

-

-

-

Overview

Upgrade your electronic devices with the high-quality SI3459BDV-T1-BE3 P-Channel Field Effect Transistor by Vishay Intertechnology. This small signal FET offers reliable switching performance and a built-in diode for added convenience. Ideal for a wide range of applications, this enhancement mode transistor is designed to enhance the efficiency and functionality of your circuits. Trust Vishay's reputation for excellence and invest in the SI3459BDV-T1-BE3 for superior performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for various environments.

Polarity or Channel Type: P-CHANNEL

Allows for efficient switching applications and compatibility with certain circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode, which can be beneficial for certain applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Enables easy integration onto circuit boards, saving space and allowing for efficient assembly.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, the transistor can handle higher voltages, improving reliability and safety.

Maximum Drain Current (ID): 2.9 A

Capable of handling high drain currents, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.216 ohm

Low on resistance enables efficient power handling and minimal power loss.

Maximum Power Dissipation (Abs): 3.3 W

Ability to dissipate high power levels, ensuring stable operation under varying conditions.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for applications where heat dissipation is important.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI3459BDV-T1-BE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.9 A

Maximum Drain-Source On Resistance:

.216 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

30 pF

JEDEC-95 Code:

MO-193AA

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI3459BDV-T1-BE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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