Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Vishay Intertechnology's SI3443BDV-T1-E3 is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.6A Drain Current. Ideal for small signal applications, it operates in Enhancement Mode with -55 to 150°C temperature range. Its PLASTIC/EPOXY package and 0.06 ohm On Resistance make it suitable for various electronic designs.
Median Price
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This material provides durability and protection, ensuring the product's longevity and reliability.
P-channel FETs are known for their low on-state resistance, making them efficient for power management applications.
The built-in diode simplifies circuit design and enhances efficiency by preventing reverse current flow.
Surface mount capability allows for easy and efficient PCB assembly.
A higher breakdown voltage ensures reliable performance and protection against voltage spikes.
Rectangular shape facilitates easy placement and mounting on a PCB.
Gull wing terminals provide secure connections and ease of soldering during assembly.
Enhancement mode FETs offer high input impedance and low output impedance, ideal for switching applications.
High maximum drain current allows for handling higher power levels efficiently.
Six terminals provide flexibility in circuit connections and functionality.
Small outline package style saves space on the PCB, making it suitable for compact designs.
Metal-oxide semiconductor technology ensures high-performance characteristics and reliability.
High maximum operating temperature range allows for reliable operation in various environmental conditions.
Silicon material offers superior performance and stability for the transistor element.
Low minimum operating temperature range enables operation in cold environments without compromising performance.
Matte tin finish ensures good solderability and reliable electrical connections.
Low on-resistance results in efficient power handling and minimal power loss.
Dual terminal position allows for easy connection and mounting in the circuit.
Optimal time at peak reflow temperature ensures proper soldering and component reliability.
High peak reflow temperature ensures proper soldering and durability of the component.
Small Signal Field Effect Transistors (FET) SI3443BDV-T1-E3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Element Material:
SI3443BDV-T1-E3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - New Solder Plating Site 18/Apr/2023
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
LL4148
Surge Components
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
ABS06-32.768KHZ-T
Abracon
Abracon's ABS06-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 90000 ohm series resistance, and -40 to 85 °C operating temperature range. Ideal for applications requiring precise timing in compact designs like IoT devices and wearables.
M39029/58360
Souriau-sunbank Connection Technologies
Souriau-sunbank's M39029/58360 is a MIL-Spec backshell with CRIMP contact type and male gender. It conforms to MIL-DTL-38999 standards, mates with M39029/56348 contacts, and requires M81969/14-01 insertion tools. Ideal for military applications requiring reliable crimp terminals.
1N4148WT
Onsemi
1N4148WT by Onsemi is a single rectifier diode with a max output current of 0.3A and forward voltage of 0.72V. It has a small outline package style, matte tin terminal finish, and operates at temperatures up to 150°C. Ideal for applications requiring fast reverse recovery time such as power supplies and signal demodulation circuits.
LM358MX
Texas Instruments
LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.
1N4148
Vicor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
Gec Plessey Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358AN
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
261
Deltrol Controls
Other Relays;
2N7002,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Bkc Semiconductors
ERJU06F10R0V
Panasonic
ERJU06F10R0V by Panasonic is an 0805 size SMT fixed resistor with a resistance of 10 ohm and 1% tolerance. It operates b/w -55 to 155 °C, suitable for AEC-Q200 standards in automotive applications due to its high temperature coefficient of 100 ppm/°C. With a max operating voltage of 150 V and power dissipation of 0.125 W, it is ideal for surface mounting type.
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;
MBRS340T3G
MBRS340T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 4A. It operates b/w -65°C to 150°C, making it suitable for various applications requiring high-speed switching and low power loss in a small outline package. The diode's matte tin terminal finish and dual position make it ideal for surface mount PCB designs.
2N2222A
Bytesonic Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
Boca Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LAN8720AI-CP-TR
Microchip Technology
LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.
LD1117S33TR
STMicroelectronics
LD1117S33TR by STMicroelectronics is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 1.3A. It has a small outline package style, operates at an adjustable temperature range from 0 to 125°C, and is ideal for applications requiring stable voltage regulation in compact electronic devices.
DS18B20+
Analog Devices
DS18B20+ by Analog Devices is a 12-bit temperature sensor with 3.3/5V supply, -55 to 125°C range, and ±0.50°C accuracy. It features a 1-Wire interface for digital output and is commonly used in applications requiring precise temperature monitoring in various industries.
Laube Technology
2N7002DWS-7
Diodes Incorporated
Diodes Inc. 2N7002DWS-7 is a N-channel FET with 60V DS breakdown voltage, 0.247A max drain current, and 4 ohm max on resistance. Ideal for switching applications in small outline packages, it operates from -55 to 150°C with MIL-STD-202 compliance.
BSS84PWH6327XTSA1
Infineon Technologies
BSS84PWH6327XTSA1 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 8 ohm RDS(on), and 3.8pF Crss. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and ENHANCEMENT MODE operation at temperatures ranging from -55°C to 150°C.
IRLML2803TRPBF-1
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .25 ohm; JEDEC-95 Code: TO-236AB; JESD-30 Code: R-PDSO-G3;
BSS159NH6327XTSA2
Infineon's BSS159NH6327XTSA2 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A ID, and 3.5Ω RDS(on). Ideal for depletion mode operation in small outline packages, it features a built-in diode and low feedback capacitance of 5.9pF.
BSS84
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 50 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRLML2402TRPBF
Infineon Technologies' IRLML2402TRPBF is a N-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. With 1.2A max drain current and 0.25 ohm max on resistance, it can handle up to 0.54W power dissipation efficiently at temperatures ranging from -55°C to 150°C.
2N7000
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; JESD-30 Code: O-PBCY-T3; Package Shape: ROUND;
2N7002
Diotec Semiconductor Ag
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 10; Terminal Finish: MATTE TIN;
SN7002WH6327XTSA1
Infineon Technologies' SN7002WH6327XTSA1 is a small signal N-channel FET with a min DS breakdown voltage of 60V. It features a single configuration with built-in diode and operates in enhancement mode. This surface mount transistor, made of silicon, has a max drain current of 0.23A and a max drain-source on resistance of 5 ohm. It is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.
NDS7002A_NL
Fairchild Semiconductor
Fairchild Semiconductor's NDS7002A_NL is a N-CHANNEL FET with 60V DS breakdown voltage, 0.28A ID, and 2 ohm RDS. Ideal for switching applications in enhancement mode, it operates b/w -65 to 150 °C with a max power dissipation of 0.3W.
BSS138P
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
IRLML5103TRPBF
Infineon's IRLML5103TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 0.54A Drain Current, and 0.6 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, operating from -55 to 150 °C.
BS250P
Zetex Plc
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .7 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): IN-LINE;
2N7002T
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
NTJD1155LT1G
NTJD1155LT1G by Onsemi is a Small Signal FET with N/P-Channel, ideal for switching applications. It features 8V DS Breakdown Voltage, 1.3A Drain Current, and 0.175ohm On Resistance. Operating from -55 to 150°C, it comes in a small outline package with Gull Wing terminals for surface mount assembly.
BSS123
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: R-PDSO-G3; Transistor Element Material: SILICON;
MMBF170-7
Diodes Inc. MMBF170-7 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 0.5A max drain current, 5ohm RDS(on), and 5pF Crss. The small outline package with gull wing terminals makes it suitable for surface mount designs in enhancement mode operation up to 150°C.
ZXMN6A07FTA
ZXMN6A07FTA by Diodes Inc. is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.93A Drain Current, and 0.3 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with 150°C max temp.
BSS138PS,115
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 2; No. of Terminals: 6; Minimum DS Breakdown Voltage: 60 V;
NX3008NBK,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -50 Cel; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
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SI3433CDV-T1-GE3
Vishay Intertechnology
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.3 W; JEDEC-95 Code: MO-193AA; Package Body Material: PLASTIC/EPOXY;
SI3440DV-T1-E3
SI3440DV-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max ID of 1.2A and 0.375 ohm RDS(on), it can handle up to 1.14W power dissipation at temperatures ranging from -55 to 150°C.
SI3437DV-T1-GE3
SI3437DV-T1-GE3 by Vishay Intertechnology is a P-channel FET with 150V breakdown voltage, 1.4A drain current, and 0.75 ohm on-resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 3.2W in a small outline package.
SI3476DV-T1-GE3
Vishay Intertechnology's SI3476DV-T1-GE3 is a N-channel FET with 80V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 4.6A max drain current, and 0.093 ohm max on-resistance. Operating in enhancement mode, it has a peak reflow temp of 260°C and -55 to 150°C operating range.
SI3440ADV-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.6 W; Maximum Drain Current (ID): 2.2 A; Maximum Operating Temperature: 150 Cel;
SI3493DDV-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI3473CDV-T1-GE3
SI3473CDV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 12V DS Breakdown Voltage and 8A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, this MOSFET has 0.022 ohm On Resistance and 520pF Feedback Capacitance.
SI3443DV
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Maximum Drain-Source On Resistance: .065 ohm; Terminal Position: DUAL;
SI3460DDV-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Terminal Finish: Matte Tin (Sn); Maximum Drain Current (ID): 7.9 A;
SI3421DV-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
SI3477DV-T1-GE3
SI3477DV-T1-GE3 by Vishay Intertechnology is a P-channel small signal FET with a min DS breakdown voltage of 12V. It is used for switching applications and has a max drain current of 8A. This surface mount transistor operates in enhancement mode and has a max power dissipation of 4.2W.
SI3445DV
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Qualification: Not Qualified; Terminal Position: DUAL;
SI3459BDV-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.3 W; No. of Terminals: 6; Maximum Drain Current (ID): .0022 A;
SI3415A-TP
Micro Commercial Components
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .045 ohm; Peak Reflow Temperature (C): 260; Maximum Drain Current (ID): 4 A; Maximum Time At Peak Reflow Temperature (s): 10;
SI3440DV-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.14 W; JESD-609 Code: e3; Terminal Form: GULL WING;
SI3458BDV-T1-E3
SI3458BDV-T1-E3 by Vishay Intertechnology is a N-CHANNEL small signal FET with 60V DS breakdown voltage. It is used for switching applications, operates in enhancement mode, and has a max drain current of 4.1A.
SI3410DV-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.1 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;
SI3474DV-T1-GE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.6 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 14 pF;
SI3440ADV-T1-BE3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.6 W; Maximum Feedback Capacitance (Crss): 3 pF; Moisture Sensitivity Level (MSL): 1;
SI3443DDV-T1-GE3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.7 W; Peak Reflow Temperature (C): 260; Maximum Feedback Capacitance (Crss): 111 pF;
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