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SI1032X-T1-GE3

Vishay Intertechnology

SI1032X-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SI1032X-T1-GE3 is a N-channel FET with 20V DS breakdown voltage, 0.2A drain current, and 5 ohm on-resistance. Ideal for switching applications in enhancement mode operation. Features a small outline package with matte tin terminal finish, suitable for surface mount assembly at temperatures up to 150°C.

Median Price

$0.191

Lifecycle Status

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8

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1k+

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Newark

USA . 177 parts In-Stock

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$0.045

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Arrow

USA . 201 parts In-Stock

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DigiKey

USA . 2,159 parts In-Stock

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$0.710

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$0.284

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$0.194

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Mouser Electronics

USA . 79,228 parts In-Stock

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TTI

USA . 12,000 parts In-Stock

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Verical

USA . 201 parts In-Stock

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Vyrian

USA . 29,925 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Perfect Parts

USA . 87,448 parts In-Stock

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Kepictronics

USA . 41,120 parts In-Stock

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Epart123

USA . 6,000 parts In-Stock

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$0.171

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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iodParts Technologies Inc.

India . 2,997 parts In-Stock

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$0.382

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Overview

Experience superior performance and reliability with the Vishay Intertechnology SI1032X-T1-GE3 Small Signal Field Effect Transistor. This N-CHANNEL transistor features a single configuration with a built-in diode, making it ideal for switching applications. With a maximum operating temperature of 150°C and a maximum power dissipation of 0.34W, this transistor offers exceptional durability and efficiency. Trust Vishay Intertechnology's expertise in semiconductor technology and elevate your electronic designs with the SI1032X-T1-GE3.

Feature Benefit Bullets

Package Body Material

The plastic/epoxy package body material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type

N-channel transistors typically have higher electron mobility and lower resistance, allowing for efficient switching in electronic circuits.

Configuration

The built-in diode simplifies circuit design and protects the transistor from reverse voltage spikes, enhancing reliability.

Transistor Application

Designed specifically for switching applications, this transistor offers fast response times and low power consumption.

Surface Mount

Surface mount capability allows for easy integration onto PCBs, saving space and facilitating automated manufacturing processes.

Minimum DS Breakdown Voltage

With a minimum breakdown voltage of 20V, this transistor is suitable for low to medium voltage applications.

Maximum Drain Current (Abs) (ID)

The maximum drain current of 0.2A allows for efficient power handling in various circuits.

Maximum Power Dissipation (Abs)

With a maximum power dissipation of 0.34W, this transistor can handle moderate power levels without overheating.

Field Effect Transistor Technology

Metal-oxide semiconductor technology offers high efficiency and reliability, making this transistor suitable for critical applications.

Maximum Operating Temperature

With a maximum operating temperature of 150°C, this transistor can withstand elevated temperatures in various environments.

Maximum Drain-Source On Resistance

The low drain-source on resistance of 5 ohms minimizes power loss and heat generation in the transistor, improving efficiency.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI1032X-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.2 A

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI1032X-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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