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SI1021R-T1-GE3

Vishay Intertechnology

SI1021R-T1-GE3 by Vishay Intertechnology

SI1021R-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has 0.19A Drain Current and 4Ω On Resistance.

Median Price

$0.218

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 119 parts In-Stock

1+ parts

$0.218

100+ parts

$0.172

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-

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119

$0.218

$0.172

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Farnell

UK . 1,283 parts In-Stock

1+ parts

$0.547

100+ parts

$0.284

1k+ parts

$0.209

10k+ parts

$0.190

1,283

$0.547

$0.284

$0.209

$0.190

Mouser Electronics

USA . 18,327 parts In-Stock

1+ parts

$0.590

100+ parts

$0.323

1k+ parts

$0.225

10k+ parts

$0.154

18,327

$0.590

$0.323

$0.225

$0.154

DigiKey

USA . 9,613 parts In-Stock

1+ parts

$0.620

100+ parts

$0.326

1k+ parts

$0.224

10k+ parts

$0.162

9,613

$0.620

$0.326

$0.224

$0.162

Newark

USA . 3 parts In-Stock

1+ parts

$0.620

100+ parts

$0.327

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$0.225

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3

$0.620

$0.327

$0.225

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TTI

USA . 15,000 parts In-Stock

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$0.157

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$0.157

Arrow

USA . 6,000 parts In-Stock

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$0.153

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$0.153

Verical

USA . 6,000 parts In-Stock

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$0.153

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$0.153

TTI Europe

Germany . 6,000 parts In-Stock

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$0.142

6,000

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$0.142

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

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100+ parts

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$0.165

3,000

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$0.165

Element14

Singapore . 1,283 parts In-Stock

1+ parts

-

100+ parts

$0.295

1k+ parts

$0.211

10k+ parts

$0.189

1,283

-

$0.295

$0.211

$0.189

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 47,537 parts In-Stock

1+ parts

$0.067

100+ parts

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47,537

$0.067

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NAC Semi

USA . 12,000 parts In-Stock

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$0.280

12,000

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$0.280

Bristol Electronics

USA . 3,064 parts In-Stock

1+ parts

-

100+ parts

$0.195

1k+ parts

$0.117

10k+ parts

$0.078

3,064

-

$0.195

$0.117

$0.078

Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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3,000

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.183

3,000

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$0.183

Connector Distribution Corp

USA . 2,800 parts In-Stock

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2,800

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Right Parts Inc.

USA . 2,800 parts In-Stock

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2,800

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Inventory MP

USA . 1,603 parts In-Stock

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1,603

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ACDS - Activité Composants Distribution Service

France . 1,461 parts In-Stock

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1,461

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Dan-Mar Components

USA . 1,461 parts In-Stock

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1,461

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 9,359 parts In-Stock

1+ parts

$0.057

100+ parts

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9,359

$0.057

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Perfect Parts

USA . 334,834 parts In-Stock

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Futuretech Components

Singapore . 45,000 parts In-Stock

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Kepictronics

USA . 24,000 parts In-Stock

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Eastek

USA . 24,000 parts In-Stock

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Epart123

USA . 18,000 parts In-Stock

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$0.261

18,000

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$0.261

GreenTree Electronics

Israel . 12,000 parts In-Stock

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12,000

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Overview

Enhance your electronic devices with the Vishay Intertechnology SI1021R-T1-GE3 P-CHANNEL Small Signal Field Effect Transistor. Known for delivering top-quality components, Vishay Intertechnology offers a reliable solution for switching applications. With its built-in diode and enhancement mode operation, this transistor provides superior performance and efficiency. Upgrade your circuits with the SI1021R-T1-GE3 and experience the benefits of enhanced power dissipation, high breakdown voltage, and durable construction. Trust in Vishay Intertechnology's expertise and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring a longer lifespan.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their high input impedance and low output impedance, making them suitable for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Minimum DS Breakdown Voltage: 60 V

With a breakdown voltage of 60V, this FET can handle higher voltages, making it suitable for various applications requiring higher voltage ratings.

Surface Mount: YES

Surface mount capability allows for easy and convenient integration onto PCBs, saving space and simplifying the assembly process.

Maximum Power Dissipation (Abs): 0.25 W

With a maximum power dissipation of 0.25W, this FET can handle moderate power levels without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR technology offers high speed and low power consumption, making this FET energy efficient and suitable for various applications.

Maximum Operating Temperature: 150 °C

Operating temperature up to 150°C allows for reliable performance in high-temperature environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI1021R-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.19 A

Maximum Drain-Source On Resistance:

4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI1021R-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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