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P4SMA33CAHM3_A/H

Vishay Intertechnology

P4SMA33CAHM3_A/H by Vishay Intertechnology

Vishay Intertechnology P4SMA33CAHM3_A/H is a single bidirectional transient suppression diode with 33.05V breakdown voltage, 400W peak power dissipation, and 1uA reverse current. Ideal for protecting sensitive electronics from voltage spikes in automotive and industrial applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,534 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,534

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-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 173 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

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173

$0.087

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Aztec Data Supply Inc.

USA . 1,915 parts In-Stock

1+ parts

$0.173

100+ parts

-

1k+ parts

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10k+ parts

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1,915

$0.173

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Semicontronic

India . 715 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

1k+ parts

$1.950

10k+ parts

-

715

$2.010

$1.960

$1.950

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Component Stockers USA

USA . 31,106 parts In-Stock

1+ parts

$3.650

100+ parts

-

1k+ parts

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10k+ parts

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31,106

$3.650

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AZTECH Wire

Italy . 394 parts In-Stock

1+ parts

$6.836

100+ parts

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394

$6.836

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Continental Prestige Electronics

USA . 3,540 parts In-Stock

1+ parts

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3,540

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Argo Parts USA

USA . 787 parts In-Stock

1+ parts

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787

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

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100

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Overview

Enhance the protection of your electronic devices with the Vishay Intertechnology P4SMA33CAHM3_A/H Transient Suppression Device. Manufactured with the highest quality standards, this diode offers reliable voltage suppression to safeguard your equipment from power surges and spikes. Ideal for a wide range of applications, this product ensures peace of mind by efficiently regulating voltage levels. Trust in Vishay Intertechnology's expertise and invest in the superior performance of the P4SMA33CAHM3_A/H for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting.

Config: SINGLE

Simplified design for easy installation and maintenance.

Surface Mount: YES

Allows for easy and secure mounting on a printed circuit board.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

Can handle high power surges, protecting connected devices from damage.

Nominal Breakdown Voltage: 33.05 V

Provides effective voltage clamping and protection against transient voltage spikes.

Maximum Reverse Current: 1 uA

Ensures minimal leakage current, increasing efficiency.

Maximum Operating Temperature: 150 °C

Suitable for a wide range of operating environments.

Reference Standard: AEC-Q101, UL RECOGNIZED

Meets industry standards for quality and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, providing effective protection.

Technology: AVALANCHE

Utilizes avalanche breakdown for fast response and high energy dissipation capability.

Polarity: BIDIRECTIONAL

Offers protection against voltage spikes in both directions, enhancing versatility.

Maximum Clamping Voltage: 45.7 V

Limits the voltage across the protected circuit to a safe level during transients.

Technical Specifications

Transient Suppression Devices P4SMA33CAHM3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

34.7 V

Minimum Breakdown Voltage:

31.4 V

Nominal Breakdown Voltage:

33.05 V

Maximum Clamping Voltage:

45.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

3.3 W

Reference Standard:

AEC-Q101, UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

28.2 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

28.2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P4SMA33CAHM3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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