Loading...

MMSZ5235B-E3-18

Vishay Intertechnology

MMSZ5235B-E3-18 by Vishay Intertechnology

Vishay Intertechnology's MMSZ5235B-E3-18 Zener Diode has a reverse test voltage of 5V, working test current of 20mA, and max power dissipation of 0.5W. Ideal for applications requiring precise voltage regulation in compact electronic devices with limited space and operating temperatures ranging from -55 to 150°C.

Median Price

$0.055

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

-

10k+ parts

-

15

$0.055

-

-

-

Vyrian

USA . 5,629 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,629

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

$0.052

10k+ parts

$0.051

50

$0.055

-

$0.052

$0.051

Ampacity Inc.

Singapore . 461 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

-

10k+ parts

-

461

$1.010

-

-

-

AZTECH Wire

Italy . 552 parts In-Stock

1+ parts

$5.442

100+ parts

-

1k+ parts

-

10k+ parts

-

552

$5.442

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 27,397 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,397

-

-

-

-

Overview

Unlock the power of precision with the MMSZ5235B-E3-18 Zener diode by Vishay Intertechnology. Designed for reliability and performance, this small outline diode provides a reverse test voltage of 5V and a working test current of 20mA, making it ideal for a wide range of applications. With a maximum reverse current of only 3uA and a maximum power dissipation of 0.5W, this diode offers superior quality and efficiency. Trust Vishay Intertechnology to deliver excellence in every component, ensuring your projects run smoothly and efficiently. Choose the MMSZ5235B-E3-18 for unrivaled performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent durability and resistance to environmental factors, making it ideal for long-term use.

Config: SINGLE

This configuration simplifies the circuit design and offers a straightforward setup for efficient operation.

Working Test Current: 20 mA

With a high working test current, this zener diode can handle a wide range of applications with ease.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation, saving time and effort during assembly.

Maximum Reverse Current: 3 uA

The low reverse current ensures minimal power loss and efficient performance in the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact design, saving space in the circuit layout.

Reverse Test Voltage: 5 V

The high reverse test voltage offers reliable protection in reverse bias conditions, enhancing the overall stability of the circuit.

No. of Terminals: 2

With only two terminals, this zener diode is simple to connect and configure, reducing the risk of errors during installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style enhances the overall aesthetics of the circuit and allows for efficient use of space on the circuit board.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance ensures consistent and accurate performance, making this zener diode a reliable choice for precision applications.

Maximum Knee Impedance: 750 ohm

The low knee impedance of this zener diode enables quick response times and efficient regulation of voltage in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this zener diode can withstand elevated temperatures without compromising performance.

Maximum Dynamic Impedance: 5 ohm

The low dynamic impedance allows for stable and reliable voltage regulation, making this zener diode suitable for a variety of industrial applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures that this zener diode can function effectively in harsh environmental conditions.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals provides excellent conductivity and resistance to corrosion, ensuring long-term reliability.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit configuration and makes it easier to connect to other components.

Maximum Power Dissipation: 0.5 W

The high maximum power dissipation capability allows this zener diode to handle high power loads without overheating.

Diode Type: ZENER DIODE

As a zener diode, this product has a well-defined reverse breakdown voltage, making it ideal for voltage regulation and protection in various circuits.

Maximum Voltage Temperature Coefficient: 3.06mv/°C

The low voltage temperature coefficient ensures stable performance over a wide temperature range, making this zener diode suitable for diverse applications.

Nominal Reference Voltage: 6.8 V

The precise nominal reference voltage provides accurate voltage regulation, making this zener diode a reliable choice for critical circuits.

Technology: ZENER

Based on zener technology, this diode offers reliable and accurate voltage regulation, making it a preferred choice for numerous electronic applications.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and secure connections, ensuring stable performance in the circuit.

Polarity: UNIDIRECTIONAL

With unidirectional polarity, this zener diode ensures consistent and reliable operation in one direction, providing effective voltage regulation.

Diode Element Material: SILICON

Made of silicon, this zener diode offers excellent reliability, high performance, and consistent voltage regulation for various electronic circuits.

Technical Specifications

Zener Diodes MMSZ5235B-E3-18 attributes and parameters. Explore more Zener Diodes devices from Vishay Intertechnology

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

5 ohm

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Maximum Knee Impedance:

750 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Nominal Reference Voltage:

6.8 V

Maximum Reverse Current:

3 uA

Reverse Test Voltage:

5 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Voltage Temperature Coefficient:

3.06 mV/Cel

Maximum Voltage Tolerance:

5 %

Working Test Current:

20 mA

Trade Compliance

MMSZ5235B-E3-18 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20